专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013181101A2 METHOD, APPARATUS, AND MANUFACTURE FOR FLASH MEMORY ADAPTIVE ALGORITHM 审中-公开
标题翻译：用于闪存存储器自适应算法的方法，装置和制造
公开(公告)号：WO2013181101A2
公开(公告)日：2013-12-05
申请号：PCT/US2013042673
申请日：2013-05-24
申请人： SPANSION LLC
发明人： PARKER ALLAN
IPC分类号： G11C16/10 , G11C16/34
CPC分类号： G11C16/04 , G11C16/14 , G11C16/3468
摘要： A method, apparatus, and manufacture for a memory device is provided. The memory device includes a memory cell region including sectors, where each sector includes memory cells. The memory device further includes a memory controller that is configured to control program operations and erase operations to the memory cells. During erase operations to the memory cells, pre-programming occurs in which each un-programmed memory cell in the sector being erased is programmed by applying at least one programming pulse at a program voltage until a program verify passes. Then, the program voltage is adjusted based on the number of programming pulses applied until the program-verify passed. During subsequent program operations in that sector, programming pulses are applied with the adjusted program voltage.
摘要翻译：提供了一种用于存储器件的方法，装置和制造。存储器件包括包括扇区的存储单元区域，其中每个扇区包括存储器单元。存储装置还包括存储器控制器，其被配置为控制对存储器单元的程序操作和擦除操作。在对存储器单元的擦除操作期间，进行预编程，其中通过在程序电压下施加至少一个编程脉冲直到程序验证通过来编程扇区中被擦除的每个未编程的存储器单元。然后，基于所施加的编程脉冲的数量来调整编程电压，直到程序验证通过。在该扇区的随后的编程操作期间，以调整的编程电压施加编程脉冲。

IPRDB

热门服务

关于我们

友情链接

联系方式