专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006085348A2 A PROCESS FOR LARGE-SCALE PRODUCTION OF CdTe/CdS THIN FILM SOLAR CELLS, WITHOUT THE USE OF CdCl2 审中-公开
标题翻译： CdTe / CdS薄膜太阳能电池大规模生产的方法，没有使用CdCl2
公开(公告)号：WO2006085348A2
公开(公告)日：2006-08-17
申请号：PCT/IT2006/000053
申请日：2006-02-02
申请人： SOLAR SYSTEMS & EQUIPMENTS S.R.L. , ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
发明人： ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
IPC分类号： H01L31/18
CPC分类号： H01L31/1836 , Y02E10/50
摘要： A process for the large-scale production of CdTe/CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps of : depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with a Chlorine-containing inert gas; depositing a back-contact film on said treated CdTe film. The Chlorine -containing inert gas is a Chlorof luorocarbon or a Hydrochlorof luorocarbon product and the treatment is carried out in a vacuum chamber at an operating temperature of 380-4200C. The Chlorine released as a result of the thermal dissociation of the product reacts with solid CdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residual CdCl2 is removed from the cell surface by applying vacuum to the vacuum chamber while keeping the temperature at the operating value.
摘要翻译：一种用于大规模生产CdTe / CdS薄膜太阳能电池的方法，所述薄膜按顺序沉积在透明基板上，包括以下步骤：在所述基板上沉积透明导电氧化物薄膜（TCO）; 在所述TCO膜上沉积CdS膜; 在所述CdS膜上沉积CdTe膜; 用含氯惰性气体处理所述CdTe膜; 在所述处理的CdTe膜上沉积背接触膜。含氯的惰性气体是氯氟烃或氟氯烃产品，处理在真空室中，工作温度为380-4200℃。由于产物的热解解释放的氯与细胞表面上存在的固体CdTe反应产生TeCl 2和CdCl 2蒸气。通过对真空室施加真空，同时将温度保持在工作值，从电池表面除去任何残留的CdCl 2。

2. 发明申请

WO2009001389A1 METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE /CDS THIN FILM SOLAR CELL 审中-公开
标题翻译：在CDTE / CDS薄膜太阳能电池中形成非修复反接触的方法
公开(公告)号：WO2009001389A1
公开(公告)日：2008-12-31
申请号：PCT/IT2007/000469
申请日：2007-06-28
申请人： SOLAR SYSTEMS & EQUIPMENTS S.R.L. , ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
发明人： ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
IPC分类号： H01L31/0224 , H01L31/0296
CPC分类号： H01L31/022425 , H01L31/0296 , Y02E10/50
摘要： A method for the formation of a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film comprising the steps of depositing a layer of As 2 Te 3 on the CdTe layer at a substrate temperature comprised between ambient temperature and 200°C; depositing a layer of Cu on the As 2 Te 3 layer; bringing at least the deposited Cu layer to a temperature comprised between 150° and 250°C. The method is used to form a stable back-contact on CdTe/CdS thin film solar cells.
摘要翻译：一种用于在p型半导体CdTe薄膜上形成非整流欧姆接触的方法，包括以下步骤：在包含在环境温度和200℃之间的衬底温度下在CdTe层上沉积一层As 2 Te 3; 在As2Te3层上沉积一层Cu; 使至少沉积的Cu层至150℃至250℃的温度。该方法用于在CdTe / CdS薄膜太阳能电池上形成稳定的反接触。

3. 发明申请

WO2003032406A3 A PROCESS FOR LARGE-SCALE PRODUCTION OF CDTE/CDS THIN FILM SOLAR CELLS 审中-公开
公开(公告)号：WO2003032406A3
公开(公告)日：2003-04-17
申请号：PCT/IT2002/000634
申请日：2002-10-04
申请人： SOLAR SYSTEMS & EQUIPMENTS S.R.L. , ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
发明人： ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
IPC分类号： H01L31/18
摘要： A process for the large-scale production of CdTe/CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps 5 of: depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with CdC12; depositing a back-contact film on said treated CdTe film. The treatment 10 of the CdTe film with CdC12 comprises the following steps: forming a layer of CdC12 on the CdTe film by evaporation, while keeping the substrate at room temperature; annealing said CdC12 layer in a vacuum chamber at 380-420oC and 300- 1000 mbar under inert gas atmosphere;-removing the inert 15 gas from said chamber to produce vacuum condition, while the substrate is kept to a temperature of 350-420OC whereby any residual CdC12 is evaporated from the CdTe film surface.

4. 发明申请

WO2003032406A2 A PROCESS FOR LARGE-SCALE PRODUCTION OF CDTE/CDS THIN FILM SOLAR CELLS 审中-公开
标题翻译：大规模生产CDTE / CDS薄膜太阳能电池的方法
公开(公告)号：WO2003032406A2
公开(公告)日：2003-04-17
申请号：PCT/IT2002/000634
申请日：2002-10-04
申请人： SOLAR SYSTEMS & EQUIPMENTS S.R.L. , ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
发明人： ROMEO, Nicola , BOSIO, Alessio , ROMEO, Alessandro
IPC分类号： H01L31/18
CPC分类号： C23C14/5806 , C23C14/0629 , C23C14/086 , H01L31/022425 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A process for the large-scale production of CdTe/CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps 5 of: depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with CdC12; depositing a back-contact film on said treated CdTe film. The treatment 10 of the CdTe film with CdC12 comprises the following steps: forming a layer of CdC12 on the CdTe film by evaporation, while keeping the substrate at room temperature; annealing said CdC12 layer in a vacuum chamber at 380-420oC and 300- 1000 mbar under inert gas atmosphere;-removing the inert 15 gas from said chamber to produce vacuum condition, while the substrate is kept to a temperature of 350-420OC whereby any residual CdC12 is evaporated from the CdTe film surface.
摘要翻译：一种用于大规模生产CdTe / CdS薄膜太阳能电池的方法，所述膜作为一系列顺序沉积在透明基板上，包括以下步骤：沉积透明导电膜氧化物（TCO）在所述衬底上; 在所述TCO膜上沉积CdS膜; 在所述CdS膜上沉积CdTe膜; 用CdCl 2处理所述CdTe膜; 在所述处理过的CdTe膜上沉积背接触膜。具有CdCl 2的CdTe膜的处理10包括以下步骤：通过蒸发在CdTe膜上形成CdCl 2层，同时将基板保持在室温下; 在惰性气体气氛下在380-420℃和300-1000毫巴的真空室中退火所述CdCl 2层; - 从所述室中去除惰性气体以产生真空条件，同时将衬底保持在350-420OC的温度，由此任何残留的CdCl 2从CdTe膜表面蒸发。

5. 发明申请

WO2011045728A1 METHOD FOR THE ACTIVATION OF CDTE THIN FILMS FOR THE APPLICATION IN CDTE/CDS TYPE THIN FILM SOLAR CELLS 审中-公开
标题翻译：用于CDTE / CDS型薄膜太阳能电池的CDTE薄膜激活方法
公开(公告)号：WO2011045728A1
公开(公告)日：2011-04-21
申请号：PCT/IB2010/054587
申请日：2010-10-11
申请人： ARENDI S.P.A. , ROMEO, Nicola , ROMEO, Alessandro , BOSIO, Alessio
发明人： ROMEO, Nicola , ROMEO, Alessandro , BOSIO, Alessio
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/1828 , H01L31/0296 , Y02E10/543
摘要： A method for the activation of CdTe films used in CdTe/CdS type thin film solar cells, in which a CdTe film is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and a gaseous chlorine-free fluorinated hydrocarbon, both said compounds being harmless to the ozone layer. In particular, the chlorinated hydrocarbon is 1-chlorobutane, 1,1,2-trichloroethylene or dichloromethane and the fluorinated hydrocarbon is 1,1,1,2-tetrafluoroethane, trifluoromethane or 1,1- difluoromethane.
摘要翻译：一种用于CdTe / CdS型薄膜太阳能电池中使用的CdTe膜的方法，其中用由无氟氯化烃和无氯的氟化烃形成的混合物处理CdTe膜，所述化合物均为对臭氧层无害。特别地，氯代烃是1-氯丁烷，1,1,2-三氯乙烯或二氯甲烷，氟化烃是1,1,1,2-四氟乙烷，三氟甲烷或1,1-二氟甲烷。

6. 发明申请

WO2011033445A1 PROCESS FOR THE PRODUCTION OF Cu(In,Ga)Se2/CdS THIN-FILM SOLAR CELLS 审中-公开
标题翻译：用于生产Cu（In，Ga）Se2 / CdS薄膜太阳能电池的方法
公开(公告)号：WO2011033445A1
公开(公告)日：2011-03-24
申请号：PCT/IB2010/054126
申请日：2010-09-14
申请人： ADVANCED RESEARCH ON PV-TECH S.R.L. , ROMEO, Nicola , ROMEO, Alessandro , BOSIO, Alessio
发明人： ROMEO, Nicola , ROMEO, Alessandro , BOSIO, Alessio
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/1832 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for the preparation of a CuInGaSe 2 thin film useable as an absorber layer in CulnGaSe 2 /CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe 2 film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In 2 Se 3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In 2 Se 3 . This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2.
摘要翻译：一种制备可用作CulnGaSe2 / CdS太阳能电池中的吸收层的CuInGaSe 2薄膜的方法，其中所述薄膜是通过溅射沉积在CuInSe 2膜上的Cu-Ga合金而获得的，该CuInSe 2薄膜沉积在被 Mo膜和随后的硒化。在硒化之前，InSe3和Cu在不存在Se的情况下在真空室中混合。该方法使用多晶靶来沉积In2Se3。该工艺适用于在工业级生产CdS薄膜太阳能电池，其中吸收层由Cu（In1Ga）Se2构成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式