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1. 发明申请

WO2010077368A3 ELECTROCHROMIC DEVICE AND METHOD FOR MAKING ELECTROCHROMIC DEVICE 审中-公开
公开(公告)号：WO2010077368A3
公开(公告)日：2010-07-08
申请号：PCT/US2009/006764
申请日：2009-12-31
申请人： SOLADIGM, INC. , NGUYEN, Paul, P. , LIU, Shiwei
发明人： NGUYEN, Paul, P. , LIU, Shiwei
IPC分类号： G02F1/153
摘要： A method for lithiating an electrochromic device comprises forming a first transparent conductive layer on a substrate, forming an electrochromic structure on the first transparent conductive layer, forming a second transparent conductive layer on the electrochromic structure, and lithiating the electrochromic structure through the second transparent conductive layer. In one exemplary embodiment lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process. In another exemplary embodiment, lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt. The electrochromic device can be configured in either a "forward" or a "reverse" stack configuration.

2. 发明申请

WO2005020242A2 MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING AND STORING MULTIPLE BITS 审中-公开
标题翻译：磁记录元件利用旋转切换和存储多个位
公开(公告)号：WO2005020242A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/027708
申请日：2004-08-24
申请人： GRANDIS, INC. , NGUYEN, Paul, P. , HUAI, Yiming
发明人： NGUYEN, Paul, P. , HUAI, Yiming
IPC分类号： G11C
CPC分类号： G11C11/16 , B82Y25/00 , G11C11/5607 , H01F10/3263 , H01L43/08
摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够存储多个位的磁性元件的方法和系统。该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。第一被钉扎层是铁磁性的并且具有沿第一方向固定的第一钉扎层磁化。第一非磁性层位于第一被钉扎层和第一自由层之间。第一自由层是铁磁性的并且具有第一自由层磁化。第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。连接层位于第二被钉扎层和第一自由层之间。第二非磁性层位于第二被钉扎层和第二自由层之间。第二自由层是铁磁性的并且具有第二自由层磁化。磁性元件构造成当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

3. 发明申请

WO2005029497A2 CURRENT CONFINED PASS LAYER FOR MAGNETIC ELEMENTS UTILIZING SPIN-TRANSFER AND AN MRAM DEVICE USING SUCH MAGNETIC ELEMENTS 审中-公开
标题翻译：使用旋转元件的磁性元件的当前配置通道层和使用这种磁性元件的MRAM器件
公开(公告)号：WO2005029497A2
公开(公告)日：2005-03-31
申请号：PCT/US2004/030677
申请日：2004-09-17
申请人： GRANDIS, INC. , HUAI, Yiming , NGUYEN, Paul, P. , ALBERT, Frank
发明人： HUAI, Yiming , NGUYEN, Paul, P. , ALBERT, Frank
IPC分类号： G11C
CPC分类号： G11C11/16
摘要： A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).
摘要翻译：公开了一种用于提供和磁性元件的方法和系统。在一个方面，磁性元件至少包括钉扎层，自由层和驻留在被钉扎层和自由层之间的电流限制层。被钉扎层是铁磁性的并且具有第一磁化强度。电流限制层在绝缘矩阵中具有至少一个通道。通道是导电的并延伸通过电流限制层。自由层是铁磁性的并且具有第二磁化强度。被钉扎层，自由层和电流限制层被配置为允许使用自旋转移来切换自由层的磁化。磁性元件还可以包括其它层，包括用于自旋阀的层，自旋隧道结，双自旋阀，双自旋隧道结，以及双自旋阀/隧道结构，。

4. 发明申请

WO2005082061A2 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
标题翻译：具有高度均匀分布和平面平衡磁化的自由层的旋转传递元件
公开(公告)号：WO2005082061A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/006161
申请日：2005-02-24
申请人： GRANDIS, INC. , NGUYEN, Paul, P. , HUAI, Yiming
发明人： NGUYEN, Paul, P. , HUAI, Yiming
IPC分类号： G11C11/16 , G11C17/02 , H01F10/30 , H01F10/32 , H01F41/30 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and System for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-ofplane demagnetization energy.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定的，非磁性的隔离层和自由层。间隔层位于钉扎层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括静态耦合到自由层的第二固定和第二间隔层和第二自由层。至少一个自由层具有高的垂直各向异性。高垂直各向异性具有垂直各向异性能，其至少为外面退磁能的百分之二十。

5. 发明申请

WO2005079528A2 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：具有低饱和磁化自由层的旋转磁体元件
公开(公告)号：WO2005079528A2
公开(公告)日：2005-09-01
申请号：PCT/US2005/005448
申请日：2005-02-18
申请人： GRANDIS, INC. , NGUYEN, Paul, P. , HUAI, Yiming , DIAO, Zhitao , ALBERT, Frank
发明人： NGUYEN, Paul, P. , HUAI, Yiming , DIAO, Zhitao , ALBERT, Frank
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二固定层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

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