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1. 发明申请

WO2005082061A2 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
标题翻译：具有高度均匀分布和平面平衡磁化的自由层的旋转传递元件
公开(公告)号：WO2005082061A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/006161
申请日：2005-02-24
申请人： GRANDIS, INC. , NGUYEN, Paul, P. , HUAI, Yiming
发明人： NGUYEN, Paul, P. , HUAI, Yiming
IPC分类号： G11C11/16 , G11C17/02 , H01F10/30 , H01F10/32 , H01F41/30 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and System for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-ofplane demagnetization energy.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定的，非磁性的隔离层和自由层。间隔层位于钉扎层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括静态耦合到自由层的第二固定和第二间隔层和第二自由层。至少一个自由层具有高的垂直各向异性。高垂直各向异性具有垂直各向异性能，其至少为外面退磁能的百分之二十。

2. 发明申请

WO2005079528A2 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：具有低饱和磁化自由层的旋转磁体元件
公开(公告)号：WO2005079528A2
公开(公告)日：2005-09-01
申请号：PCT/US2005/005448
申请日：2005-02-18
申请人： GRANDIS, INC. , NGUYEN, Paul, P. , HUAI, Yiming , DIAO, Zhitao , ALBERT, Frank
发明人： NGUYEN, Paul, P. , HUAI, Yiming , DIAO, Zhitao , ALBERT, Frank
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二固定层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

3. 发明申请

WO2005020242A2 MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING AND STORING MULTIPLE BITS 审中-公开
标题翻译：磁记录元件利用旋转切换和存储多个位
公开(公告)号：WO2005020242A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/027708
申请日：2004-08-24
申请人： GRANDIS, INC. , NGUYEN, Paul, P. , HUAI, Yiming
发明人： NGUYEN, Paul, P. , HUAI, Yiming
IPC分类号： G11C
CPC分类号： G11C11/16 , B82Y25/00 , G11C11/5607 , H01F10/3263 , H01L43/08
摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够存储多个位的磁性元件的方法和系统。该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。第一被钉扎层是铁磁性的并且具有沿第一方向固定的第一钉扎层磁化。第一非磁性层位于第一被钉扎层和第一自由层之间。第一自由层是铁磁性的并且具有第一自由层磁化。第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。连接层位于第二被钉扎层和第一自由层之间。第二非磁性层位于第二被钉扎层和第二自由层之间。第二自由层是铁磁性的并且具有第二自由层磁化。磁性元件构造成当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

4. 发明申请

WO2005029497A2 CURRENT CONFINED PASS LAYER FOR MAGNETIC ELEMENTS UTILIZING SPIN-TRANSFER AND AN MRAM DEVICE USING SUCH MAGNETIC ELEMENTS 审中-公开
标题翻译：使用旋转元件的磁性元件的当前配置通道层和使用这种磁性元件的MRAM器件
公开(公告)号：WO2005029497A2
公开(公告)日：2005-03-31
申请号：PCT/US2004/030677
申请日：2004-09-17
申请人： GRANDIS, INC. , HUAI, Yiming , NGUYEN, Paul, P. , ALBERT, Frank
发明人： HUAI, Yiming , NGUYEN, Paul, P. , ALBERT, Frank
IPC分类号： G11C
CPC分类号： G11C11/16
摘要： A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).
摘要翻译：公开了一种用于提供和磁性元件的方法和系统。在一个方面，磁性元件至少包括钉扎层，自由层和驻留在被钉扎层和自由层之间的电流限制层。被钉扎层是铁磁性的并且具有第一磁化强度。电流限制层在绝缘矩阵中具有至少一个通道。通道是导电的并延伸通过电流限制层。自由层是铁磁性的并且具有第二磁化强度。被钉扎层，自由层和电流限制层被配置为允许使用自旋转移来切换自由层的磁化。磁性元件还可以包括其它层，包括用于自旋阀的层，自旋隧道结，双自旋阀，双自旋隧道结，以及双自旋阀/隧道结构，。

5. 发明申请

WO2010077368A3 ELECTROCHROMIC DEVICE AND METHOD FOR MAKING ELECTROCHROMIC DEVICE 审中-公开
公开(公告)号：WO2010077368A3
公开(公告)日：2010-07-08
申请号：PCT/US2009/006764
申请日：2009-12-31
申请人： SOLADIGM, INC. , NGUYEN, Paul, P. , LIU, Shiwei
发明人： NGUYEN, Paul, P. , LIU, Shiwei
IPC分类号： G02F1/153
摘要： A method for lithiating an electrochromic device comprises forming a first transparent conductive layer on a substrate, forming an electrochromic structure on the first transparent conductive layer, forming a second transparent conductive layer on the electrochromic structure, and lithiating the electrochromic structure through the second transparent conductive layer. In one exemplary embodiment lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process. In another exemplary embodiment, lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt. The electrochromic device can be configured in either a "forward" or a "reverse" stack configuration.

6. 发明申请

WO2004064073A2 SPIN-TRANSFER MULTILAYER STACK CONTAINING MAGNETIC LAYERS WITH RESETTABLE MAGNETIZATION 审中-公开
标题翻译：具有可复位磁化的包含磁性层的转移多层堆叠
公开(公告)号：WO2004064073A2
公开(公告)日：2004-07-29
申请号：PCT/US2004/000304
申请日：2004-01-07
申请人： GRANDIS, INC.
发明人： NGUYEN, Paul, P. , HUAI, Yiming
IPC分类号： G11C
CPC分类号： G11C11/15 , G11C11/5607
摘要： A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer bas at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an anti ferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.
摘要翻译：用于高密度存储器阵列的磁性元件包括可重置层和存储层。可复位层具有通过至少一个外部产生的磁场在选定方向上设定的磁化。当写入电流通过磁性元件时，存储层基于至少一个易磁化轴和基于自旋转移效应改变方向的磁化。磁性元件的替代实施例包括由隧道势垒层，钉扎磁性层和抗铁磁性层形成的附加多层结构，其在预定方向上钉住被钉扎层的磁化。磁性元件的另一替代实施例包括由隧道势垒层和具有与基本实施例的可重置层的磁矩不同的磁矩的第二可复位层形成的附加多层结构。

7. 发明申请

WO2004063760A2 MAGNETOSTATICALLY COUPLED MAGNETIC ELEMENTS UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT 审中-公开
标题翻译：使用磁性元件的磁耦合磁耦合元件和使用磁性元件的MRAM器件
公开(公告)号：WO2004063760A2
公开(公告)日：2004-07-29
申请号：PCT/US2004/000453
申请日：2004-01-09
申请人： GRANDIS, INC.
发明人： HUAI, Yiming , ALBERT, Frank , NGUYEN, Paul, P.
IPC分类号： G01R
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.
摘要翻译：公开了一种用于提供能够使用自旋转移效应进行写入的磁性元件和使用该磁性元件的磁性存储器的方法和系统。磁性元件包括自旋隧道结，分离层和自旋阀。在替代实施例中，自旋隧道结和/或自旋阀可以是双重的。分离层位于自旋隧穿结的第一自由层和自旋阀的第二自由层之间。分离层被配置为使得两个自由层被静磁耦合，优选地它们的磁化反平行。在替代实施例中，具有双自旋阀和双自旋隧道结，可以省略分离层，并且使用反铁磁层提供适当的距离。另一个实施例包括使元件成形，使得自旋阀具有比自旋隧道结更小的横向尺寸。

8. 发明申请

WO2004029973A3 THERMALLY STABLE MAGNETIC ELEMENT UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT 审中-公开
公开(公告)号：WO2004029973A3
公开(公告)日：2004-04-08
申请号：PCT/US2003/030176
申请日：2003-09-23
申请人： GRANDIS, INC.
发明人： HUAI, Yiming , NGUYEN, Paul, P.
IPC分类号： H01L31/119
摘要： A method and system for providing a magnetic element (120) capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element (120) disclosed. The magnetic element (120) includes a first (128), second (132) and third (136) pinned layers, first (130) and second (134) nonmagnetic layers, a free layer (140) and a nonmagnetic spacer layer (138). The first (128), second (132) and third (136) pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first (130) and second (134) nonmagnetic layers include first and second diffusions barriers, respectively. The first (130) and second (134) nonmagnetic layers are between the first (128) and second (132) pinned layers and the second (132) and third (136) pinned layers, respectively. The first (128) and second (132) pinned layers and the second (132) and third (136) pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer (138) is conductive and resides between the free layer (140) and the third pinned layer (136). In addition, performance can be further improved by doping Co containing ferromagnetic layers with Cr and/or Pt.

9. 发明申请

WO2004079743A2 MAGNETOSTATICALLY COUPLED MAGNETIC ELEMENTS UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT 审中-公开
标题翻译：使用磁性元件的磁耦合磁耦合元件和使用磁性元件的MRAM器件
公开(公告)号：WO2004079743A2
公开(公告)日：2004-09-16
申请号：PCT/US2004/006003
申请日：2004-02-27
申请人： GRANDIS, INC.
发明人： ALBERT, Frank , HUAI, Yiming , NGUYEN, Paul, P.
IPC分类号： G11C
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件和相应的存储器的方法和系统。在一个方面，该方法和系统包括提供双自旋隧道/阀结构和至少一个自旋阀。双自旋隧道/阀结构包括在被钉扎层和自由层之间的非磁性间隔层，在自由层和另一个钉扎层之间的另一个钉扎层和阻挡层。双自旋隧道/阀结构和自旋阀的自由层是静磁耦合的。在一个实施例中，分离层位于双自旋隧道/阀结构和自旋阀之间。在另一方面，该方法和系统包括提供两个双自旋阀，其间的自旋隧道结，在一个实施例中，分离层。在两个方面，磁性元件配置成当写入电流通过磁性元件时，使用自旋转移来写入自由层。

10. 发明申请

WO2004013861A2 MAGNETIC ELEMENT UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT 审中-公开
标题翻译：使用磁性元件的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：WO2004013861A2
公开(公告)日：2004-02-12
申请号：PCT/US2003/024627
申请日：2003-08-06
申请人： GRANDIS, INC.
发明人： HUAI, Yiming , NGUYEN, Paul, P.
IPC分类号： G11C
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , H01F41/302
摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing o electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。钉扎层具有沿第一方向固定的磁化。非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧道穿过阻挡层的厚度的绝缘体。第二被钉扎层具有沿第二方向固定的磁化。磁性元件配置成当写入电流通过磁性元件时，由于自旋转移使自由层的磁化改变方向。

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