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    • 1. 发明申请
    • A CLEAVING PROCESS TO FABRICATE MULTILAYERED SUBSTRATES USING LOW IMPLANTATION DOSES
    • 使用低植入剂量制造多层基材的清洁方法
    • WO0111930A9
    • 2001-09-20
    • PCT/US0022245
    • 2000-08-10
    • SILICON GENESIS CORPHENLEY FRANCOIS JBRYAN MICHAEL AEN WILLIAM G
    • HENLEY FRANCOIS JBRYAN MICHAEL AEN WILLIAM G
    • H01L21/02H01L21/265H01L21/301H01L21/762H01L27/12H01L21/30H01L21/46
    • H01L21/76251H01L21/26506H01L21/76254
    • A method of forming substrates (11), e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer (18) on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (20) (e.g., epitaxial silicon) on the cleave layer. The method includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.
    • 一种形成衬底(11)的方法,例如绝缘体上的硅,硅上的硅。 该方法包括提供施主衬底,例如硅晶片。 该方法还包括在供体基底上形成含有切割平面(最终分离的平面)的切割层(18)。 在具体实施方案中,包含硅锗的切割层。 该方法还包括在切割层上形成器件层(20)(例如外延硅)。 该方法包括将粒子引入切割层以在切割层中增加应力。 然后将切割层内的颗粒重新分布形成在解理面附近的高浓度区域的颗粒,其中颗粒的再分布以基本上不含在分裂面内的微泡或微腔形成的方式进行。 该方法还包括向施主衬底提供所选择的能量以在解理面从裂解层切割器件层,由此施加所选择的能量以产生受控的切割作用,以从器件层的一部分切割层 受控的方式。
    • 2. 发明申请
    • A CLEAVING PROCESS TO FABRICATE MULTILAYERED SUBSTRATES USING LOW IMPLANTATION DOSES
    • 使用低注入剂量制作多层基板的切割工艺
    • WO0111930A2
    • 2001-02-15
    • PCT/US0022245
    • 2000-08-10
    • SILICON GENESIS CORPHENLEY FRANCOIS JBRYAN MICHAEL AEN WILLIAM G
    • HENLEY FRANCOIS JBRYAN MICHAEL AEN WILLIAM G
    • H01L21/02H01L21/265H01L21/301H01L21/762H01L27/12H05K
    • H01L21/76251H01L21/26506H01L21/76254
    • A method of forming substrates (11), e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer (18) on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (20) (e.g., epitaxial silicon) on the cleave layer. The method includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.
    • 一种形成衬底(11)的方法,例如绝缘体上的硅,硅上的硅。 该方法包括提供施主衬底,例如硅晶片。 该方法还包括在供体衬底上形成包含解理平面,最终分离平面的解理层(18)。 在具体的实施方式中,劈裂层包含硅锗。 该方法还包括在劈裂层上形成器件层(20)(例如,外延硅)。 该方法包括将颗粒引入劈裂层中以在劈裂层中增加应力。 然后将裂开层内的颗粒重新分布以在裂开平面附近形成高浓度区域的颗粒,其中颗粒的重新分布以在裂开平面中基本上没有微泡或微腔形成的方式进行。 该方法还包括向供体衬底提供选择的能量以在劈裂平面处从劈裂层切割器件层,随后施加选定的能量以产生受控的劈裂行为,以从劈裂层的一部分去除器件层 受控制的方式。
    • 3. 发明申请
    • OPTICAL MATERIALS WITH SELECTED INDEX-OF-REFRACTION
    • 具有选择的折射率的光学材料
    • WO02057812A2
    • 2002-07-25
    • PCT/US0201702
    • 2002-01-17
    • NANOGRAM CORPBRYAN MICHAEL AKAMBE NOBUYUKI
    • BRYAN MICHAEL AKAMBE NOBUYUKI
    • G02B6/124G02B6/125G02B6/13G02B
    • G02B6/13G02B6/124G02B6/125Y10T428/25
    • Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light (404) is used to shift the index-of-refraction of planar optical structures (400) to shift the index-of-refraction of the photosensitive material (402) to a desired value. This approach can be effective to produce cladding material with a selected index-of-refraction. In additional embodiments gradients in index-of-refraction are formed using photosensitive materials. In additional embodiments gradient in index-of-refraction are formed using photosensitive materials. In further embodiments, the photosensitive materials are patterned within the planar optical structure. Irradiation of the photosensitive material can selectively shift the index-of-refraction of the patterned photosensitive material. By patterning the light used used to irradiate the patterned photosensitive material, different optical devices can be selectively activated within the optical structure.
    • 光敏光学材料用于建立用于光学器件形成的更通用的方法。 在一些实施例中,未图案化的光(404)用于移动平面光学结构(400)的折射率以将感光材料(402)的折射率偏移到期望值。 这种方法可以有效地生产具有选定的折射率的包层材料。 在另外的实施例中,使用光敏材料形成折射率折射率。 在另外的实施例中,使用光敏材料形成折射率梯度。 在另外的实施例中,感光材料在平面光学结构内图案化。 感光材料的照射可以选择性地移动图案化感光材料的折射率。 通过图案化用于照射图案化感光材料的光,可以在光学结构内选择性地激活不同的光学器件。