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1. 发明申请

WO2009015271A1 METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CVD OR ALD USING IRON, RUTHENIUM OR OSMIUM CYCLOPENTADIENE CARBON MONOXIDE COMPLEXES 审中-公开
标题翻译：通过使用铁，钌或奥氏体环戊二烯一氧化碳复合物通过CVD或ALD形成含金属的膜的方法
公开(公告)号：WO2009015271A1
公开(公告)日：2009-01-29
申请号：PCT/US2008/071015
申请日：2008-07-24
申请人： SIGMA-ALDRICH CO. , KANJOLIA, Ravi , ODEDRA, Raj , BOAG, Neil , WEYBURNE, David
发明人： KANJOLIA, Ravi , ODEDRA, Raj , BOAG, Neil , WEYBURNE, David
IPC分类号： C07F15/00 , C07F15/02 , C23C16/16 , C23C16/18 , C23C16/455
CPC分类号： C23C16/16 , C07F17/02 , C23C16/18 , C23C16/45525
摘要： Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C 1o -alkyl; X is C 1 -C 10 -alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
摘要翻译：提供通过化学相沉积，特别是原子层沉积（ALD）和化学气相沉积（CVD）形成含薄金属的膜的方法。所述方法包括将至少一种有机金属前体递送至底物，其中所述至少一种前体在结构上对应于式（II）; 其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为零，1,2,3,4或5.进一步提供了制备本文所述前体的方法。

2. 发明申请

WO2009015270A1 ORGANOMETALLIC PRECURSORS FOR USE IN CHEMICAL PHASE DEPOSITION PROCESSES 审中-公开
标题翻译：用于化学相沉积过程的有机金属前体
公开(公告)号：WO2009015270A1
公开(公告)日：2009-01-29
申请号：PCT/US2008/071014
申请日：2008-07-24
申请人： SIGMA-ALDRICH CO. , KANJOLIA, Ravi , ODEDRA, Raj , BOAG, Neil
发明人： KANJOLIA, Ravi , ODEDRA, Raj , BOAG, Neil
IPC分类号： C07F15/00 , C07F15/02 , C23C16/16 , C23C16/18 , C23C16/455
CPC分类号： C23C16/45525 , C07F17/02 , C23C16/16 , C23C16/18
摘要： An organometallic precursor is provided. The precursor corresponds in structure to Formula (I): Cp(R) n M(CO) 2 (X), wherein: M is Ru, Fe or Os; R is C 1 -C 10 -alkyl; X is C 1 -C 10 -alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
摘要翻译：提供了一种有机金属前体。该前体在结构上对应于式（I）：Cp（R）n M（CO）2（X），其中：M是Ru，Fe或Os; R为C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n是1,2,3,4或5.前体可用于化学相沉积工艺，例如原子层沉积（ALD）和化学气相沉积（CVD）。

3. 发明申请

WO2009146423A1 METHODS OF FORMING RUTHENIUM-CONTAINING FILMS BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子沉积法形成含金属薄膜的方法
公开(公告)号：WO2009146423A1
公开(公告)日：2009-12-03
申请号：PCT/US2009/045677
申请日：2009-05-29
申请人： SIGMA-ALDRICH CO. , KANJOLIA, Ravi , ODEDRA, Rajesh , ANTHIS, Jeff , BOAG, Neil
发明人： KANJOLIA, Ravi , ODEDRA, Rajesh , ANTHIS, Jeff , BOAG, Neil
IPC分类号： C23C16/16 , C23C16/455 , C07F15/00
CPC分类号： C23C16/16 , C23C16/45525
摘要： A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO) 3 wherein L is selected from the group consisting of a linear or branched C 2 -C 6 -alkenyl and a linear or branched C 1 - 6 -alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C 2 -C 6 -alkenyl, C 1 - 6 -alkyl, alkoxy and NR 1 R 2 ; wherein R 1 and R 2 are independently alkyl or hydrogen.
摘要翻译：提供了通过原子层沉积形成含钌膜的方法。所述方法包括将至少一种前体递送至底物，所述至少一种前体在结构上相应于式I：（L）Ru（CO）3，其中L选自直链或支链的C 2 -C 6 - 烯基和直链或支链C 1-6 - 烷基; 并且其中L任选被一个或多个独立地选自C 2 -C 6 - 烯基，C 1-6 - 烷基，烷氧基和NR 1 R 2的取代基取代; 其中R1和R2独立地是烷基或氢。

4. 发明申请

WO2011017068A1 HIGH MOLECULAR WEIGHT ALKYL-ALLYL COBALTTRICARBONYL COMPLEXES AND USE THEREOF FOR PREPARING DIELECTRIC THIN FILMS 审中-公开
标题翻译：高分子量的碱金属络合钴配合物及其制备介质薄膜的用途
公开(公告)号：WO2011017068A1
公开(公告)日：2011-02-10
申请号：PCT/US2010/043300
申请日：2010-07-27
申请人： SIGMA-ALDRICH CO. , ODEDRA, Rajesh , BOAG, Neil , ANTHIS, Jeff , KANJOLIA, Ravi
发明人： ODEDRA, Rajesh , BOAG, Neil , ANTHIS, Jeff , KANJOLIA, Ravi
IPC分类号： C07F15/06 , C23C16/00
CPC分类号： C07F15/06 , C23C16/406 , C23C16/45553
摘要： A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R 1 and R 2 are independently C 2 -C 8 -alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
摘要翻译：提供了一种通过气相沉积法形成含钴薄膜的方法。该方法包括使用至少一种在结构上对应于式（I）的前体; 其中R1和R2独立地为C2-C8-烷基; x为零，1或2; y为0或1; 其中x和y两者不能同时为零。

5. 发明申请

WO2011053505A1 EVAPORATOR 审中-公开
标题翻译：蒸发器
公开(公告)号：WO2011053505A1
公开(公告)日：2011-05-05
申请号：PCT/US2010/053557
申请日：2010-10-21
申请人： SIGMA-ALDRICH CO. , KANJOLIA, Ravi , PLATTS, Chris , NGUYEN, Nam , WILKINSON, Mark
发明人： KANJOLIA, Ravi , PLATTS, Chris , NGUYEN, Nam , WILKINSON, Mark
IPC分类号： C23C16/448
CPC分类号： C23C16/4483 , C23C14/243 , C23C16/4481 , Y10T137/0318 , Y10T137/4891 , Y10T137/7976 , Y10T137/8122 , Y10T137/8622
摘要： A solid precursor delivery assembly (200) generally includes a container (202) having upper and lower portions and chambers defined within the container, including an inlet chamber (238), an outlet chamber (244), and first and second precursor chambers. (240, 242) The first and second precursor chambers are configured for holding precursor material within the container. Sintered frits (248, 250, 252) are fixedly coupled and sealed to an interior portion of the container, and define at least part of the chambers within the container. At least one of the sintered frits is configured for retaining precursor material thereon within the first precursor chamber, and at least one of the sintered frits is configured for retaining precursor material thereon within the second precursor chamber. An inlet (206) is coupled to the container for delivering carrier gas into the container, and an outlet (208) is coupled to the container for use in removing vaporized precursor material and carrier gas from the container.
摘要翻译：固体前体输送组件（200）通常包括容器（202），其具有限定在容器内的上部和下部和室，包括入口室（238），出口室（244）以及第一和第二前体室。（240,242）第一和第二前体室被配置用于将前体材料保持在容器内。烧结玻璃料（248,250,252）固定地联接并密封到容器的内部，并且在容器内限定至少一部分室。烧结的玻璃料中的至少一个被配置用于将第一前体室内的前体材料保持在其上，并且至少一个烧结的玻璃料构造成用于在第二前体室内保留前体材料。入口（206）联接到容器以将载气输送到容器中，并且出口（208）联接到容器以用于从容器中除去蒸发的前体材料和载气。

6. 发明申请

WO2007057631A3 IMPROVED BUBBLER FOR THE TRANSPORTATION OF SUBSTANCES BY A CARRIER GAS 审中-公开
公开(公告)号：WO2007057631A3
公开(公告)日：2007-05-24
申请号：PCT/GB2006/003801
申请日：2006-10-12
申请人： SIGMA-ALDRICH CO. , CUNNING, Hugh , WILLIAMS, Graham , ODEDRA, Rajesh , KANJOLIA, Ravi
发明人： CUNNING, Hugh , WILLIAMS, Graham , ODEDRA, Rajesh , KANJOLIA, Ravi
IPC分类号： C23C16/448
摘要： A bubbler (2) for delivering liquid or solid metalorganic compounds to a reactor site. The bubbler has an inner and outer chamber and has a member (14) positioned between its inlet (6) and outlet (8) that is provided with a plurality of apertures therein. The member (14) is preferably in the form of a perforated disc having a predefined density of apertures therein to provide optimum pick up and flow of carrier gas through the bubbler.

7. 发明申请

WO2014193915A1 MANGANESE COMPLEXES AND USE THEREOF FOR PREPARING THIN FILMS 审中-公开
标题翻译：锰复合物及其制备薄膜的用途
公开(公告)号：WO2014193915A1
公开(公告)日：2014-12-04
申请号：PCT/US2014/039717
申请日：2014-05-28
申请人： SIGMA-ALDRICH CO. LLC
发明人： KANJOLIA, Ravi , GARRATT, Shaun
IPC分类号： C08F4/06 , B01J31/00
CPC分类号： C07F13/005 , B01J31/00 , C07F17/00 , C23C16/18 , C23C16/45553
摘要： Manganese complexes, methods of making the same, and use thereof in thin film deposition, such as CVD and ALD are provided herein.
摘要翻译：锰配合物，其制备方法及其在薄膜沉积中的应用，如CVD和ALD。

8. 发明申请

WO2015065823A1 METAL COMPLEXES CONTAINING AMIDOIMINE LIGANDS 审中-公开
标题翻译：含有氨基配位体的金属络合物
公开(公告)号：WO2015065823A1
公开(公告)日：2015-05-07
申请号：PCT/US2014/062108
申请日：2014-10-24
申请人： SIGMA-ALDRICH CO. LLC
发明人： KANJOLIA, Ravi , GARRATT, Shaun , THOMPSON, David , ANTHIS, Jeffrey
IPC分类号： C07F13/00 , C07C251/08 , C23C16/18
CPC分类号： C23C16/45553 , C07C251/08 , C07F13/005 , C23C16/18 , C23C16/34 , C23C16/40 , H01L21/28556 , H01L21/28568
摘要： Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.
摘要翻译：提供含有一个或多个酰胺亚胺配体的金属络合物，制备这种金属络合物的方法，以及使用这种金属络合物制备含金属膜的方法。

9. 发明申请

WO2013112383A1 MOLYBDENUM ALLYL COMPLEXES AND USE THEREOF IN THIN FILM DEPOSITION 审中-公开
标题翻译：多氯联苯复合物及其在薄膜沉积中的应用
公开(公告)号：WO2013112383A1
公开(公告)日：2013-08-01
申请号：PCT/US2013/022260
申请日：2013-01-18
申请人： SIGMA-ALDRICH CO. LLC
发明人： ODEDRA, Rajesh , GARRATT, Shaun , SALY, Mark , KANJOLIA, Ravi
IPC分类号： C07F11/00 , C23C16/00
CPC分类号： C07F11/00 , C23C16/18 , C23C16/45553
摘要： Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R 1 , R 3 , R 5 , R 7 , R 8 and R 10 are independently and at each occurrence alkyl; R 2 , R 6 and R 9 are independently alkyl; R 4 and R 11 are independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5.
摘要翻译：钼复合物及其在薄膜沉积中的应用，如CVD和ALD。钼络合物在结构上对应于式（I）和式（II），其中R 1，R 3，R 5，R 7，R 8和R 10独立地且在各处出现时为烷基; R2，R6和R9独立地是烷基; R 4和R 11独立地且每次出现时选自烷基，烯基和炔基; x，z，a，c，d和f分别为0,1或2; y，b和e独立为零或1; n和m分别为0〜5。

10. 发明申请

WO2005121399A1 PRECURSORS FOR DEPOSITION OF SILICON NITRIDE, SILICON OXYNITRIDE AND METAL SILICON OXYNITRIDES 审中-公开
标题翻译：硅氮化硅，氧化硅和金属硅氧化物沉积的前体
公开(公告)号：WO2005121399A1
公开(公告)日：2005-12-22
申请号：PCT/GB2005/002095
申请日：2005-05-26
申请人： EPICHEM LIMITED , JONES, Anthony, Copeland , RAVETZ, Megan , WILLIAMS, Paul , KANJOLIA, Ravi , ODEDRA, Rajesh
发明人： JONES, Anthony, Copeland , RAVETZ, Megan , WILLIAMS, Paul , KANJOLIA, Ravi , ODEDRA, Rajesh
IPC分类号： C23C16/30
CPC分类号： C23C16/308 , C07F7/10 , C23C16/345 , H01L21/3143 , H01L21/31641 , H01L21/31645 , H01L21/3185
摘要： Precursors for the deposition of silicon nitride, silicon oxynitride and metal silicon oxynitride films, the precursors having the general formula (I) wherein R 1 , R 2 , R 3 , R 4 , R 5 are selected from H and alkyl groups having (1 to 6) carbon atoms.
摘要翻译：用于沉积氮化硅，氮氧化硅和金属氮氧化硅膜的前体，具有通式（I）的前体，其中R 1，R 2，R 3，R 4，R 5，选自H和具有（1-6个）碳原子的烷基。

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