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1. 发明申请

WO2007001848A3 HIGH REFRACTIVE INDEX FLUIDS WITH LOW ABSORPTION FOR IMMERSION LITHOGRAPHY 审中-公开
公开(公告)号：WO2007001848A3
公开(公告)日：2007-01-04
申请号：PCT/US2006/023081
申请日：2006-06-13
申请人： SACHEM, INC. , WOJTCZAK, William, A. , DEWULF, Dean , MOULTON, Roger
发明人： WOJTCZAK, William, A. , DEWULF, Dean , MOULTON, Roger
IPC分类号： G03F7/20
摘要： An immersion lithography fluid, including a solvent, and at least one additive soluble in the solvent, in which the immersion lithography fluid has a refractive index greater than the refractive index of the solvent at a selected wavelength and the immersion lithography fluid is acceptable for use in immersion lithography. In one embodiment, the immersion lithography fluid includes an ionic liquid. In one embodiment, an immersion lithography system including an optical surface, a wafer support for holding a workpiece, and the immersion lithography fluid disposed between the optical surface and the workpiece and contacting at least a portion of the optical surface.

2. 发明申请

WO2006110279A1 SELECTIVE WET ETCHING OF METAL NITRIDES 审中-公开
标题翻译：金属硝酸盐的选择性洗涤
公开(公告)号：WO2006110279A1
公开(公告)日：2006-10-19
申请号：PCT/US2006/010478
申请日：2006-03-23
申请人： SACHEM, INC. , DEWULF, Dean , WOJTCZAK, William, A.
发明人： WOJTCZAK, William, A.
IPC分类号： H01L21/3213
CPC分类号： C09K13/06 , C09K13/00 , C09K13/02 , H01L21/32134
摘要： In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG, BPSG, BSG, silicon oxynitride, silicon nitride and silicon oxycarbide and combinations and mixtures thereof and/or photoresist materials, including steps of providing a wet etching composition including hydrogen peroxide, an organic onium hydroxide, and an organic acid; and exposing a metal nitride to be etched with the wet etching composition for a time and at a temperature effective to etch the metal nitride selectively to the surrounding structures.
摘要翻译：在一个实施方案中，本发明涉及包含过氧化氢的湿蚀刻组合物; 有机氢氧化鎓; 和酸。在另一个实施例中，本发明涉及一种将金属氮化物选择性地湿式蚀刻到包括硅，硅氧化物，玻璃，PSG，BPSG，BSG，氮氧化硅，氮化硅和碳氧化硅中的一种或多种的金属氮化物及其组合和混合物的方法和/或光致抗蚀剂材料，包括提供包括过氧化氢，有机氢氧化鎓和有机酸的湿蚀刻组合物的步骤; 并用湿蚀刻组合物暴露待蚀刻的金属氮化物一段时间，并且有效地将金属氮化物选择性地蚀刻到周围结构。

3. 发明申请

WO2005045895A3 CLEANING SOLUTIONS AND ETCHANTS AND METHODS FOR USING SAME 审中-公开
公开(公告)号：WO2005045895A3
公开(公告)日：2005-05-19
申请号：PCT/US2004/035544
申请日：2004-10-27
申请人： SACHEM, INC. , WOJTCZAK, William, A. , DEWULF, Dean , COLLINS, Sian
发明人： WOJTCZAK, William, A. , DEWULF, Dean , COLLINS, Sian
IPC分类号： C11D1/38
摘要： Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or "multi" quaternary -onium fluoride that includes two or more quaternary -onium groups linked together by one or more carbon-containing groups. The composition may further include a pH adjusting acid such as a mineral acid, carboxylic acid, dicarboxylic acid, sulfonic acid, or combination thereof to give a pH of about 2 to 9. The composition can be anhydrous and may further include an organic solvent such as an alcohol, amide, ether, or combination thereof. The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.

4. 发明申请

WO2008061258A2 SELECTIVE METAL WET ETCH COMPOSITION AND PROCESS 审中-公开
标题翻译：选择性金属湿蚀刻组合物和工艺
公开(公告)号：WO2008061258A2
公开(公告)日：2008-05-22
申请号：PCT/US2007/085068
申请日：2007-11-19
申请人： SACHEM, INC. , COLLINS, Sian , WOJTCZAK, William, A.
发明人： COLLINS, Sian , WOJTCZAK, William, A.
CPC分类号： H01L21/32134 , C23F1/28 , C23F1/30
摘要： Composition and a process using the composition for selectively wet etching metal including depositing metal on a silicon surface; applying energy to cause respective portions of the metal and silicon to form silicide, leaving a quantity of unreacted metal; selectively wet etching the unreacted metal by applying to the unreacted metal a composition including HCl, HBr, an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; a stabilizer for the nitrogen oxide, comprising a glycol, a glyme, an ether, a polyol or a mixture of any two or more thereof; and water. In one embodiment, the composition includes an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; and water.
摘要翻译：组合物和使用该组合物用于选择性地湿法蚀刻金属的方法，包括在硅表面上沉积金属; 施加能量以使金属和硅的相应部分形成硅化物，留下一定量的未反应的金属; 通过向未反应金属施加包含HCl，HBr，卤化铵，胺氢卤化物盐，季铵卤化物，季鏻卤化物或其任何两种或更多种的混合物的组合物，选择性地湿法蚀刻未反应的金属; 氮氧化物化合物; 氮氧化物的稳定剂，其包含二醇，甘醇二甲醚，醚，多元醇或其任何两种或更多种的混合物; 和水。在一个实施方案中，组合物包括卤化铵，胺氢卤化物盐，季铵卤化物，卤化季鏻或其任何两种或更多种的混合物; 氮氧化物化合物; 和水。

5. 发明申请

WO2010104816A1 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES 审中-公开
标题翻译：用于清除表面残留物的清洁配方
公开(公告)号：WO2010104816A1
公开(公告)日：2010-09-16
申请号：PCT/US2010/026601
申请日：2010-03-09
申请人： FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. , DU, Bing , WOJTCZAK, William, A. , FICNER, Stanley, A.
发明人： DU, Bing , WOJTCZAK, William, A. , FICNER, Stanley, A.
IPC分类号： C23G1/00
CPC分类号： C23G1/18 , C11D7/3245 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/02071
摘要： This disclosure relates to compositions that can be used to remove residues from a semiconductor substrate.
摘要翻译：本公开涉及可用于从半导体衬底去除残余物的组合物。

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