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1. 发明申请

WO2008061258A2 SELECTIVE METAL WET ETCH COMPOSITION AND PROCESS 审中-公开
标题翻译：选择性金属湿蚀刻组合物和工艺
公开(公告)号：WO2008061258A2
公开(公告)日：2008-05-22
申请号：PCT/US2007/085068
申请日：2007-11-19
申请人： SACHEM, INC. , COLLINS, Sian , WOJTCZAK, William, A.
发明人： COLLINS, Sian , WOJTCZAK, William, A.
CPC分类号： H01L21/32134 , C23F1/28 , C23F1/30
摘要： Composition and a process using the composition for selectively wet etching metal including depositing metal on a silicon surface; applying energy to cause respective portions of the metal and silicon to form silicide, leaving a quantity of unreacted metal; selectively wet etching the unreacted metal by applying to the unreacted metal a composition including HCl, HBr, an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; a stabilizer for the nitrogen oxide, comprising a glycol, a glyme, an ether, a polyol or a mixture of any two or more thereof; and water. In one embodiment, the composition includes an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; and water.
摘要翻译：组合物和使用该组合物用于选择性地湿法蚀刻金属的方法，包括在硅表面上沉积金属; 施加能量以使金属和硅的相应部分形成硅化物，留下一定量的未反应的金属; 通过向未反应金属施加包含HCl，HBr，卤化铵，胺氢卤化物盐，季铵卤化物，季鏻卤化物或其任何两种或更多种的混合物的组合物，选择性地湿法蚀刻未反应的金属; 氮氧化物化合物; 氮氧化物的稳定剂，其包含二醇，甘醇二甲醚，醚，多元醇或其任何两种或更多种的混合物; 和水。在一个实施方案中，组合物包括卤化铵，胺氢卤化物盐，季铵卤化物，卤化季鏻或其任何两种或更多种的混合物; 氮氧化物化合物; 和水。

2. 发明申请

WO2011053470A2 SELECTIVE SILICON ETCH PROCESS 审中-公开
标题翻译：选择性硅蚀刻工艺
公开(公告)号：WO2011053470A2
公开(公告)日：2011-05-05
申请号：PCT/US2010/052856
申请日：2010-10-15
申请人： SACHEM, INC. , COLLINS, Sian , WOJTCZAK, William A.
发明人： COLLINS, Sian , WOJTCZAK, William A.
IPC分类号： H01L21/306
CPC分类号： H01L21/30608 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A process for etching a silicon layer disposed on a substrate, including anisotropically etching a first trench in the silicon layer; selectively anisotropic wet etching silicon surfaces in the first trench, the wet etching comprising exposing the silicon surfaces to an aqueous composition including an aromatic tri(lower)alkyl quaternary onium hydroxide, and an unsymmetrical tetraalkyl quaternary phosphonium salt; in which the wet etching etches (110) and (100) planes of the silicon layer at about equal rates and preferentially to the (111) plane to form an enlarged trench having a sidewall in the (111) plane. A silicon alloy may be epitaxially deposited in the thus-produced trench as part of a process of introducing stress into at least a portion of the silicon layer.
摘要翻译：一种用于蚀刻设置在基板上的硅层的方法，包括各向异性蚀刻硅层中的第一沟槽; 在第一沟槽中选择性地各向异性湿蚀刻硅表面，湿蚀刻包括将硅表面暴露于含有芳族三（低级）烷基氢鎓鎓季铵盐的水性组合物和不对称的四烷基季鏻盐; 其中硅层的湿蚀刻蚀刻（110）和（100）平面以大致相等的速率并且优先于（111）面，以形成在（111）面中具有侧壁的扩大的沟槽。可以将硅合金外延沉积在如此生产的沟槽中，作为将应力引入硅层的至少一部分的过程的一部分。

3. 发明申请

WO2005045895A3 CLEANING SOLUTIONS AND ETCHANTS AND METHODS FOR USING SAME 审中-公开
公开(公告)号：WO2005045895A3
公开(公告)日：2005-05-19
申请号：PCT/US2004/035544
申请日：2004-10-27
申请人： SACHEM, INC. , WOJTCZAK, William, A. , DEWULF, Dean , COLLINS, Sian
发明人： WOJTCZAK, William, A. , DEWULF, Dean , COLLINS, Sian
IPC分类号： C11D1/38
摘要： Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or "multi" quaternary -onium fluoride that includes two or more quaternary -onium groups linked together by one or more carbon-containing groups. The composition may further include a pH adjusting acid such as a mineral acid, carboxylic acid, dicarboxylic acid, sulfonic acid, or combination thereof to give a pH of about 2 to 9. The composition can be anhydrous and may further include an organic solvent such as an alcohol, amide, ether, or combination thereof. The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.

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