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1. 发明申请

WO2008103994A3 WAFER FABRICATION MONITORING SYSTEMS AND METHODS, INCLUDING EDGE BEAD REMOVAL PROCESSING 审中-公开
标题翻译： WAFER制造监控系统和方法，包括边缘除珠加工
公开(公告)号：WO2008103994A3
公开(公告)日：2009-12-30
申请号：PCT/US2008054913
申请日：2008-02-25
申请人： RUDOLPH TECHNOLOGIES INC , CARLSON ALAN , PAI AJAY , LE TUAN D , PHILIP ANTONY RAVI
发明人： CARLSON ALAN , PAI AJAY , LE TUAN D , PHILIP ANTONY RAVI
IPC分类号： H01L21/461 , H01L21/66
CPC分类号： G06T7/0006 , G01N21/9501 , G01N21/9503 , G01N2021/8841 , G01R31/2831 , G01R31/303 , G06T2207/30148 , H01L21/67253
摘要： Systems and method for monitoring semiconductor wafer fabrication processing, for example based upon EBR line inspection, including capturing at least one image of a wafer at an intermediate stage of fabrication. The captured image(s) are compressed to generate a composite representation of at least an edge zone of the wafer. An edge bead removal area is identified in the representation, and at least one feature attribute is extracted from the identified area. The extracted feature attribute is automatically assessed, and information relating to a status of the fabrication processing in generated based upon the assessment. For example, recommended modifications to the fabrication processing, either upstream or downstream of the current stage of fabrication (or both) can be generated and implemented.
摘要翻译：用于监测半导体晶片制造处理的系统和方法，例如基于EBR线检查，包括在制造的中间阶段捕获晶片的至少一个图像。捕获的图像被压缩以产生晶片的至少边缘区域的复合表示。在表示中识别边缘珠去除区域，并且从识别的区域提取至少一个特征属性。提取的特征属性被自动评估，以及与根据评估产生的制造处理的状态有关的信息。例如，可以生成和实现对制造处理的推荐修改，即当前制造阶段（或两者）的上游或下游。

2. 发明申请

WO2008008817A3 EDGE INSPECTION AND METROLOGY 审中-公开
标题翻译：边缘检测和计量
公开(公告)号：WO2008008817A3
公开(公告)日：2008-11-13
申请号：PCT/US2007073231
申请日：2007-07-11
申请人： RUDOLPH TECHNOLOGIES INC , PAI AJAY , LE TUAN
发明人： PAI AJAY , LE TUAN
IPC分类号： G06K9/00 , G06F17/50 , G06F19/00 , H01L21/00 , H01L21/66
CPC分类号： G01N21/9501 , G01N21/9503
摘要： Edge feature measurement systems and methods used to characterize one or more features of an article, such as a semiconductor wafer. Characterized features include resist layer outer boundaries proximate an edge of a wafer, as well as other wafer features proximate the wafer edge as desired. In some embodiments, a relative distance from an edge of a wafer to a resist layer edge can be found via an imaging system, for example where resist was removed about a circumference of a semiconductor wafer. In other embodiments, a center of a wafer (or a center of one or more resist layers) is found and, where desired, a relative offset between the wafer center and centers of the one or more resist layers.
摘要翻译：边缘特征测量系统和用于表征物品的一个或多个特征的方法，例如半导体晶片。特征化特征包括接近晶片边缘的抗蚀剂层外边界以及根据需要接近晶片边缘的其他晶片特征。在一些实施例中，可以经由成像系统找到从晶片的边缘到抗蚀剂层边缘的相对距离，例如在围绕半导体晶片的圆周移除抗蚀剂的情况下。在其他实施例中，找到晶片的中心（或一个或多个抗蚀剂层的中心），并且在需要时，在晶片中心与一个或多个抗蚀剂层的中心之间的相对偏移。

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