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1. 发明申请

WO2017140848A1 TUNABLE LASER 审中-公开
标题翻译：可调激光
公开(公告)号：WO2017140848A1
公开(公告)日：2017-08-24
申请号：PCT/EP2017/053625
申请日：2017-02-17
申请人： ROCKLEY PHOTONICS LIMITED , UNIVERSITY OF SOUTHAMPTON
发明人： ZILKIE, Aaron , THOMSON, David John , GARDES, Frederic Yannick
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/14
CPC分类号： H01S5/142 , H01S5/0261 , H01S5/06255 , H01S5/1007 , H01S5/1032
摘要： A discrete wavelength tunable laser capable of switching between a plurality of lasing channels of different wavelengths, the tunable laser comprising: a semiconductor optical amplifier (SOA); a wavelength demultiplexer (Demux), having a Demux input which receives the output from the SOA, and a plurality of Demux outputs, each Demux output defining a different spatial path for a respective lasing channel; each of the respective lasing channels being within the bandwidth of the SOA; a reflector located within each spatial path for reflecting light of the respective lasing channel; and a lasing suppression mechanism located within each lasing channel; wherein one or more desired lasing channels are selected by application of the lasing suppression mechanism in each spatial path other than the one or more spatial paths corresponding to the one or more desired lasing channels.
摘要翻译：一种能够在多个不同波长的激光通道之间进行切换的离散波长可调激光器，所述可调激光器包括：半导体光放大器（SOA）; 具有接收来自SOA的输出的解复用输入和多个解复用器输出的波长解复用器（Demux），每个解复用器输出为相应激射通道定义不同的空间路径; 每个相应的激光通道在SOA的带宽内; 位于每个空间路径内用于反射相应激射通道的光的反射器; 以及位于每个激光通道内的激光抑制机构; 其中通过在除了对应于所述一个或多个期望的激光通道的所述一个或多个空间路径之外的每个空间路径中应用所述激光抑制机构来选择一个或多个期望的激光通道。

2. 发明申请

WO2015185750A1 MELT-GROWTH OF SINGLE-CRYSTAL ALLOY SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR ASSEMBLIES INCORPORATING SUCH STRUCTURES 审中-公开
标题翻译：单晶合金半导体结构的熔融生长和包含这种结构的半导体组件
公开(公告)号：WO2015185750A1
公开(公告)日：2015-12-10
申请号：PCT/EP2015/062623
申请日：2015-06-05
申请人： UNIVERSITY OF SOUTHAMPTON
发明人： GARDES, Frederic Yannick , REED, Graham Trevor , LITTLEJOHNS, Callum George
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02587 , H01L21/02647 , H01L21/02675
摘要： A method of fabricating at least one single-crystal alloy semiconductor structure, comprising : forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material; providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which extends from the at least one seed and a plurality of elements which are connected in spaced relation to the main body; heating the at least one structural form such that the material of the at least one structural form has a liquid state; and cooling the at least one structural form, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in the main body of the respective structural form away from the respective seed; wherein the plurality of elements of each structural form provide reservoirs of the alloying material in liquid state, such that successive ones of the plurality of elements act to maintain, in liquid state, an available supply of the alloying material to the growth front of the single crystal in the main body of the respective structural form.
摘要翻译：一种制造至少一种单晶合金半导体结构的方法，包括：在至少一种单晶合金半导体结构的基板上形成至少一种晶种，所述至少一种晶种含有合金材料; 在所述衬底上提供至少一种结构形式，其被结晶以形成所述至少一个单晶合金半导体结构，所述至少一种结构形式由主体材料形成，并且包括从所述至少一个晶种延伸的主体以及与所述主体间隔开地连接的多个元件; 加热所述至少一种结构形式，使得所述至少一种结构形式的材料具有液态; 并且冷却所述至少一种结构形式，使得所述至少一种结构形式的材料在至少一个种子上成核并且作为单晶结晶以提供至少一个单晶合金半导体结构，其中生长前沿为单晶在相应结构形式的主体中远离相应的种子传播; 其中每个结构形式的多个元件提供液态的合金材料的储存器，使得多个元件中的连续元件用于在液态下维持合金材料到单一生长前沿的可用供应晶体在主体的各自的结构形式。

3. 发明申请

WO2018224621A1 OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THEREOF 审中-公开
公开(公告)号：WO2018224621A1
公开(公告)日：2018-12-13
申请号：PCT/EP2018/065092
申请日：2018-06-07
申请人： UNIVERSITY OF SOUTHAMPTON
发明人： GARDES, Frederic Yannick , GRABSKA, Katarzyna Monika
IPC分类号： G02F1/025 , G02F1/225 , G02B6/12
摘要： An optoelectronic device and method of manufacturing the same. The device includes: a layer disposed above a substrate, the layer having a first cavity therein, which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°.

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