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1. 发明申请

WO2012009524A2 MAGNETIC STORAGE ELEMENT UTILIZING IMPROVED PINNED LAYER STACK 审中-公开
标题翻译：磁性储存元件利用改进的PINNED层堆叠
公开(公告)号：WO2012009524A2
公开(公告)日：2012-01-19
申请号：PCT/US2011/043992
申请日：2011-07-14
申请人： QUALCOMM INCORPORATED , CHEN, Wei-Chuan , KANG, Seung H. , ZHU, Xiaochun , LI, Xia
发明人： CHEN, Wei-Chuan , KANG, Seung H. , ZHU, Xiaochun , LI, Xia
IPC分类号： H01L43/08
CPC分类号： H01L43/08
摘要： A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.
摘要翻译：磁性隧道结（MTJ）存储元件可以包括钉扎层堆叠和第一功能层。钉扎层堆叠由包括底部钉扎层，耦合层和顶部钉扎层的多个层形成。第一功能层设置在底部钉扎层或顶部钉扎层中。

2. 发明申请

WO2013040072A1 STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPINTRANSFER TORQUE SWITCHING DEVICES 审中-公开
标题翻译：螺旋转矩开关装置中开关电流的应变诱导减小
公开(公告)号：WO2013040072A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/054915
申请日：2012-09-12
申请人： QUALCOMM INCORPORATED , ZHU, Xiaochun , LI, Xia , CHEN, Wei-Chuan , KANG, Seung, H.
发明人： ZHU, Xiaochun , LI, Xia , CHEN, Wei-Chuan , KANG, Seung, H.
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/12 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/325 , H01L27/222 , H01L41/12 , H01L43/08 , H01L43/10
摘要： Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ (202) to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction (236, 234) and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress (228) and permanently includes the directed static strain/strain that provides reduced switching current.
摘要翻译：使用在MTJ（202）上引起定向静态应变/应力以增加垂直磁各向异性的工艺和结构构造来构造部分垂直磁各向异性（PPMA）型磁性随机存取存储器单元。因此，MTJ的开关电流降低。在制造过程中，在受控方向（236,234）和/或受控的幅度下诱导MTJ上的定向静态应变/应力。 MTJ永久地受到预定的定向应力（228），并且永久地包括提供减小的开关电流的定向静态应变/应变。

3. 发明申请

WO2011088359A1 MAGNETIC TUNNEL JUNCTION ON PLANARIZED ELECTRODE 审中-公开
标题翻译：平面电极上的磁性隧道结
公开(公告)号：WO2011088359A1
公开(公告)日：2011-07-21
申请号：PCT/US2011/021352
申请日：2011-01-14
申请人： QUALCOMM Incorporated , KANG, Seung, H. , LI, Xia , CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , HSU, Wah Nam
发明人： KANG, Seung, H. , LI, Xia , CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , HSU, Wah Nam
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers (126) are deposited on a bottom electrode (124) and are aligned with the bottom metal (122). An etch stop layer (302) may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer (202) may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.
摘要翻译：具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。较低的电阻提高了MTJ中的读取和写入过程。 MTJ层（126）沉积在底部电极（124）上并且与底部金属（122）对准。蚀刻停止层（302）可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。此外，可以在MTJ层之前的底部电极上沉积底层（202），以促进MTJ的期望特性。

4. 发明申请

WO2013040069A1 SYMMETRICALLY SWITCHABLE SPIN-TRANSFER-TORQUE MAGNETORESISTIVE DEVICE 审中-公开
标题翻译：对称可转换转子 - 转矩磁阻器件
公开(公告)号：WO2013040069A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/054911
申请日：2012-09-12
申请人： QUALCOMM Incorporated , CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , KANG, Seung H.
发明人： CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , KANG, Seung H.
IPC分类号： G11C11/16
CPC分类号： G11C11/161
摘要： A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry At least one switching asymmetry balance layer (SABL, 112) near the free layer (108) of the MTJ reduces a first switching current lc(p-ap) causing the value of the first switching current to be nearly equal to the value of a second switching current lc(ap-p) without increasing the average switching current of the device. The SABL (112) may be a non-magnetic switching asymmetry balance layer (NM-SABL, 110) and/or a magnetic switching asymmetry balance layer (M-SABL, 112).
摘要翻译：自旋传递转矩磁随机存取存储器（STT-MRAM）装置包括具有降低的开关电流不对称性的磁隧道结（MTJ）。在MTJ的自由层（108）附近的至少一个开关不对称平衡层（SABL，112）减少了第一开关电流lc（p-ap）使得第一开关电流的值几乎等于第二开关电流lc（ap-p）的值，而不增加器件的平均开关电流。 SABL（112）可以是非磁性开关不对称平衡层（NM-SABL，110）和/或磁性开关不对称平衡层（M-SABL，112）。

5. 发明申请

WO2013044190A1 THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMENTS FOR SPIN-TRANSFER TORQUE SWITCHING DEVICE 审中-公开
标题翻译：用于转子转矩转换装置的耐热的全能的磁性非相互耦合元件
公开(公告)号：WO2013044190A1
公开(公告)日：2013-03-28
申请号：PCT/US2012/056779
申请日：2012-09-22
申请人： QUALCOMM INCORPORATED , CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , KANG, Seung H.
发明人： CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , KANG, Seung H.
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/02 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ, 102) with an acceptable themial barrier. A PMA coupling layer (110) is deposited between a first PMA layer (108) and a second PMA layer (112) to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.
摘要翻译：垂直磁各向异性（PMA）型磁性随机存取存储单元由复合PMA层构成，以提供具有可接受的主屏障的磁隧道结（MTJ，102）。 PMA耦合层（110）沉积在第一PMA层（108）和第二PMA层（112）之间以形成复合PMA层。复合PMA层可以并入PMA型MRAM细胞或平面内MRAM细胞中。

6. 发明申请

WO2011088375A2 COMPOSITE HARDMASK ARCHITECTURE AND METHOD OF CREATING NON-UNIFORM CURRENT PATH FOR SPIN TORQUE DRIVEN MAGNETIC TUNNEL JUNCTION 审中-公开
标题翻译：复合材料HARDMASK结构和创建非均匀电流路径的旋转扭矩驱动磁隧道结
公开(公告)号：WO2011088375A2
公开(公告)日：2011-07-21
申请号：PCT/US2011/021376
申请日：2011-01-14
申请人： QUALCOMM INCORPORATED , CHEN, Wei-Chuan , KANG, Seung H. , ZHU, Xiaochun
发明人： CHEN, Wei-Chuan , KANG, Seung H. , ZHU, Xiaochun
IPC分类号： H01L27/22 , G11C11/16 , H01F10/32 , H01L43/08 , B82Y25/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/32 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includesa pinned layer, a barrier layer, a free layer and a composite hardmask or top electrode. The composite hardmask / top electrode architecture is configured to provide a non-uniform current path through the MTJ storage element and is formed from electrodes having different resistance characteristics coupled in parallel. An optional tuning layer interposed between the free layer and the top electrode helps to reduce the damping constant of the free layer.
摘要翻译：公开了一种形成MTJ的磁隧道结（MTJ）存储元件和方法。磁性隧道结（MTJ）存储元件包括被钉扎层，阻挡层，自由层和复合硬掩模或顶部电极。复合硬掩模/顶电极结构被配置为提供穿过MTJ存储元件的不均匀电流路径，并且由具有并联耦合的不同电阻特性的电极形成。置于自由层和顶部电极之间的可选的调谐层有助于减小自由层的阻尼常数。

7. 发明申请

WO2012112619A1 METHODS OF INTEGRATED SHIELDING INTO MTJ DEVICE FOR MRAM 审中-公开
标题翻译：用于MRAM的MTJ器件的集成屏蔽方法
公开(公告)号：WO2012112619A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025133
申请日：2012-02-14
申请人： QUALCOMM Incorporated , CHEN, Wei-Chuan , LI, Xia , KANG, Seung H.
发明人： CHEN, Wei-Chuan , LI, Xia , KANG, Seung H.
IPC分类号： G11C11/16 , H01L27/22 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161 , H01L23/552 , H01L27/11502 , H01L27/11507 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.
摘要翻译：提供了用于屏蔽非易失性存储器的方法和装置，例如屏蔽磁性隧道结（MTJ）装置与磁通量。在一个示例中，屏蔽层邻近MTJ器件的电极形成，使得屏蔽层基本上围绕电极的表面，并且金属线耦合到屏蔽层。金属线可以通过通孔耦合到屏蔽层。

8. 发明申请

WO2011123357A1 MAGNETIC TUNNEL JUNCTION STORAGE ELEMENT AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁性隧道结存储元件及其制造方法
公开(公告)号：WO2011123357A1
公开(公告)日：2011-10-06
申请号：PCT/US2011/030008
申请日：2011-03-25
申请人： QUALCOMM INCORPORATED , CHEN, Wei-Chuan , KANG, Seung H.
发明人： CHEN, Wei-Chuan , KANG, Seung H.
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack. In particular, the adjusting layer protects the free layer from oxygen ashing during photoresist removal process.
摘要翻译：公开了形成磁性隧道结（MTJ）存储元件和形成的MTJ存储元件的方法。 MTJ存储元件包括具有钉扎层堆叠，阻挡层和自由层的MTJ堆叠。在自由层上形成调整层，使自由层免受过程相关损害。顶部电极形成在调整层上，并且利用顶部电极作为掩模蚀刻调整层和自由层。然后形成间隔层，封装顶部电极，调节层和自由层。蚀刻间隔层和MTJ叠层的其余部分。保护覆盖层沉积在间隔层和MTJ堆叠上。特别地，调节层在光致抗蚀剂去除过程中保护自由层免受氧气灰化。

9. 发明申请

WO2011072050A1 SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT UTILIZING A COMPOSITE FREE LAYER COMPRISING A SUPERPARAMAGNETIC LAYER 审中-公开
标题翻译：使用包含超级电容层的复合层的转子转换磁体元件
公开(公告)号：WO2011072050A1
公开(公告)日：2011-06-16
申请号：PCT/US2010/059527
申请日：2010-12-08
申请人： QUALCOMM INCORPORATED , CHEN, Wei-Chuan , KANG, Seung H.
发明人： CHEN, Wei-Chuan , KANG, Seung H.
IPC分类号： G11C11/16 , H01L27/22 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a composite free layer structure (214, 216, 218). The MTJ element includes a stack comprising a pinned layer (206, 208, 210), a barrier layer (212), and a composite free layer. The composite free layer includes a first free layer (214), a superparamagnetic layer (218) and a nonmagnetic spacer layer (216) interspersed between the first free layer and the superparamagnetic layer. A thickness of the spacer layer controls a manner of magnetic coupling between the first free layer and the superparamagnetic layer.
摘要翻译：用于形成磁隧道结（MTJ）存储元件的系统和方法利用复合自由层结构（214,216,218）。 MTJ元件包括一个包括被钉扎层（206,208,210），阻挡层（212）和复合自由层的叠层。复合自由层包括散布在第一自由层和超顺磁层之间的第一自由层（214），超顺磁层（218）和非磁性间隔层（216）。间隔层的厚度控制第一自由层和超顺磁层之间的磁耦合的方式。

10. 发明申请

WO2004058735A2 LIGANDS OF MELANOCORTIN RECEPTORS AND COMPOSITIONS AND METHODS RELATED THERETO 审中-公开
标题翻译： MELANOCORTIN受体的配体及其组合物及其相关方法
公开(公告)号：WO2004058735A2
公开(公告)日：2004-07-15
申请号：PCT/US2003/040931
申请日：2003-12-19
申请人： NEUROCRINE BIOSCIENCES, INC. , CHEN, Chen , TUCCI, Fabio, C. , TRAN, Joe, Anh , CHEN, Wei-Chuan , WHITE, Nicole
发明人： CHEN, Chen , TUCCI, Fabio, C. , TRAN, Joe, Anh , CHEN, Wei-Chuan , WHITE, Nicole
IPC分类号： C07D295/00
CPC分类号： C07D207/267 , C07D205/04 , C07D207/27 , C07D207/273 , C07D213/81 , C07D233/20 , C07D233/32 , C07D233/38 , C07D241/08 , C07D241/18 , C07D277/28 , C07D295/185 , C07D307/52 , C07D307/79 , C07D307/81 , C07D333/20
摘要： Compounds which function as melanocortin receptor ligands and having utility in the treatment of melanocortin receptor-based disorders. The compounds have the following structure (I) including stereoisomers, prodrugs, and pharmaceutically acceptable salts thereof, wherein A, B, m , n , p , q, r , s , t , R1 a , R 1 b, R 2 , R 3a , R 3b , R 3c , R 4 , X, Y 1 , Y 2 , and Y 3 are as defined herein. Pharmaceutical compositions containing a compound of structure (I), as well as methods relating to the use thereof, are also disclosed.
摘要翻译：作为黑皮质素受体配体起作用并可用于治疗基于黑皮质素受体的疾病的化合物。这些化合物具有以下结构（I），其包括立体异构体，前药和药学上可接受的盐，其中A，B，m，n，p，q，r，s，t，R1a，R1b，R2，R3a，R3b，R3c ，R4，X，Y1，Y2和Y3如本文所定义。还公开了含有结构（I）化合物的药物组合物以及与其用途有关的方法。

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