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1. 发明申请

WO2014123824A1 METHOD AND APPARATUS FOR GENERATING RANDOM NUMBERS USING A PHYSICAL ENTROPY SOURCE 审中-公开
标题翻译：使用物理熵源产生随机数的方法和装置
公开(公告)号：WO2014123824A1
公开(公告)日：2014-08-14
申请号：PCT/US2014/014507
申请日：2014-02-03
申请人： QUALCOMM INCORPORATED
发明人： WU, Wenqing , WANG, Peiyuan , MADALA, Raghu Sagar , GOVINDASWAMY, Senthil Kumar , YUEN, Kendrick H. , GILMORE, Robert P. , KIM, Jung Pill , KANG, Seung H.
IPC分类号： G06F7/58
CPC分类号： G06F7/58 , G06F7/588
摘要： A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.
摘要翻译：一种用于通过检测物理熵源是处于状态A还是状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图将物理熵源的状态以小于100％确定性的概率方式向相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。将输出放置在第一和第二队列中，并从每个队列中成对提取。基于从每个队列提取的序列输出随机二进制位。

2. 发明申请

WO2013043543A2 ENTROPY SOURCE WITH MAGNETO-RESISTIVE ELEMENT FOR RANDOM NUMBER GENERATOR 审中-公开
标题翻译：具有无级数发生器的磁阻元件的熵源
公开(公告)号：WO2013043543A2
公开(公告)日：2013-03-28
申请号：PCT/US2012/055785
申请日：2012-09-17
申请人： QUALCOMM Incorporated , JACOBSON, David M. , ZHU, Xiaochun , WU, Wenqing , YUEN, Kendrick Hoy Leong , KANG, Seung H.
发明人： JACOBSON, David M. , ZHU, Xiaochun , WU, Wenqing , YUEN, Kendrick Hoy Leong , KANG, Seung H.
IPC分类号： G06F7/58
CPC分类号： G06F7/588 , G06F5/01 , G06F2205/00 , G06F2207/581 , G11C11/1659 , G11C11/1673 , G11C11/1695 , G11C11/1697 , H03M7/30
摘要： An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.
摘要翻译：公开了熵源和随机数（RN）生成器。一方面，低能量熵源包括磁阻（MR）元件和感测电路。 MR元件施加静态电流，并具有基于MR元件的磁化确定的可变电阻。感测电路感测MR元件的电阻，并根据检测到的MR元件的电阻提供随机值。另一方面，RN发生器包括熵源和后处理模块。熵源包括至少一个MR元素，并且基于至少一个MR元素提供第一随机值。后处理模块接收并处理第一随机值（例如，基于加密散列函数，错误检测码，流密码算法等）并提供具有改进的随机特性的第二随机值。

3. 发明申请

WO2014110566A1 NON-VOLATILE REGISTER WITH MAGNETIC TUNNELING JUNCTIONS AND WITH EDGE DETECTOR FOR LOW READ DISTURB OF THE MTJS 审中-公开
标题翻译：具有磁性隧道结的非易失性寄存器和用于MTJS的低读取干扰的边缘检测器
公开(公告)号：WO2014110566A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/011466
申请日：2014-01-14
申请人： QUALCOMM INCORPORATED
发明人： SUN, Zhenyu , MADALA, Raghu Sagar , GOVINDASWAMY, Senthil Kumar , YUEN, Kendrick H. , WU, Wenqing , WANG, Peiyuan
IPC分类号： G11C11/16 , G11C14/00 , H03K3/037
CPC分类号： G11C11/02 , G11C11/1659 , G11C11/1673 , G11C14/0081 , H03K3/0375
摘要： A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices (124; 126) are configured to store a logical 0 or a logical 1, and are coupled to drive an output node (132) to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flipflop (104) is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector (134) coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.
摘要翻译：具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。在一个实施例中，两个MTJ设备（124; 126）被配置为存储逻辑0或逻辑1，并被耦合以将输出节点（132）驱动到指示存储的逻辑0或逻辑1的电压。 D触发器（104）的输出被馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。在读操作期间，D触发器输出两个MTJ器件的状态。通过使用耦合到输出节点的边缘检测器（134）来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

4. 发明申请

WO2013119846A2 MULTI-FREE LAYER MTJ AND MULTI-TERMINAL READ CIRCUIT WITH CONCURRENT AND DIFFERENTIAL SENSING 审中-公开
标题翻译：多层MTJ和多终端读取电路，具有同步和差分感测
公开(公告)号：WO2013119846A2
公开(公告)日：2013-08-15
申请号：PCT/US2013/025191
申请日：2013-02-07
申请人： QUALCOMM INCORPORATED
发明人： LI, Xia , WU, Wenqing , KIM, Jung Pill , ZHU, Xiaochun , KANG, Seung H. , MADALA, Raghu Sagar , YUEN, Kendrick H.
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/15 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C2211/5615 , G11C2211/562 , G11C2211/5633 , H01L27/222 , H01L27/228 , H01L43/08
摘要： A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an antiferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the antiferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.
摘要翻译：多自由层磁隧道结（MTJ）单元包括底电极层，底电极层上的反铁磁层，反铁磁层上的固定磁化层和固定磁化层上的阻挡层。第一自由磁化层位于阻挡层的第一区域上，并且覆盖层位于第一自由磁化层上。自由磁化层在阻挡层的第二区域上，从第一区域横向移位，并且覆盖层位于第二自由磁化层上。可选地，电流开关建立包括第一自由磁化层的读取电流路径，同时不建立包括第二自由磁化层的读取电流路径。可选地，电流开关建立包括第一和第二自由磁化层的读取电流路径。

5. 发明申请

WO2013071254A2 CIRCUIT AND METHOD FOR GENERATING A REFERENCE LEVEL FOR A MAGNETIC RANDOM ACCESS MEMORY ELEMENT 审中-公开
标题翻译：用于产生磁性随机存取元件的参考电平的电路和方法
公开(公告)号：WO2013071254A2
公开(公告)日：2013-05-16
申请号：PCT/US2012/064703
申请日：2012-11-12
申请人： QUALCOMM INCORPORATED
发明人： ZHU, Xiaochun , LI, Sean , WU, Wenqing , KIM, Jung Pill , KANG, Seung H.
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C5/147 , G11C11/1673
摘要： A method of establishing a reference level includes providing first and second non-overlapping paths from a first node to a second node, providing first and second reference magnetic random access memory (MRAM) elements in the first path, providing third and fourth reference MRAM elements in the second path, measuring a first value indicative of a resistance between the first node and the second node, and setting the reference level based at least in part on the measured value. Also an associated reference circuit.
摘要翻译：建立参考水平的方法包括提供从第一节点到第二节点的第一和第二非重叠路径，在第一路径中提供第一和第二参考磁随机存取存储器（MRAM）元件，提供第三和第四参考MRAM元件在所述第二路径中，测量表示所述第一节点和所述第二节点之间的电阻的第一值，并且至少部分地基于所述测量值来设置所述参考电平。还有一个相关的参考电路。

6. 发明申请

WO2015116416A1 THREE-PHASE GSHE-MTJ NON-VOLATILE FLIP-FLOP 审中-公开
标题翻译：三相GSHE-MTJ非挥发性FLIP-FLOP
公开(公告)号：WO2015116416A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/011899
申请日：2015-01-19
申请人： QUALCOMM INCORPORATED
发明人： WU, Wenqing , YUEN, Kendrick Hoy Leong , ARABI, Karim
IPC分类号： H03K3/3562 , G11C11/16 , G11C11/18
CPC分类号： G11C11/1693 , G11C11/155 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C14/0081 , H03K3/356008 , H03K3/35625 , H03K3/45
摘要： Systems and methods are directed to a three-phase non-volatile flip- flop (NVFF) (500), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure (Jl, J2), with a first GSHE-MTJ (Jl) and a second GSHE-MTJ (J2) coupled between a first combined terminal (Al, B2) and a second combined terminal (Bl, A2), and a slave stage (Invl, Inv2, EQ) formed from a first inverter cross-coupled with a second inverter. A first data value (d) is read out from the slave stage during a read phase (Phi2= 1) of the same clock cycle that a second data value (d) is written into the master stage during a write phase (Phi3= 1). The three-phase NVFF includes three control signals (Phi 1, 2, 3), for controlling an initialization phase (Phil= 1) of the slave stage, the read phase (Phi2= 1), and the write phase (Phi3= 1).
摘要翻译：系统和方法涉及三相非易失性触发器（NVFF）（500），其包括由双巨型自旋霍尔效应（GSHE） - 磁性隧道结（MTJ）结构（Jl，具有耦合在第一组合终端（A1，B2）和第二组合终端（B1，A2）之间的第一GSHE-MTJ（J1）和第二GSHE-MTJ（J2）和从属级（Inv1， Inv2，EQ）由与第二反相器交叉耦合的第一反相器形成。在写入阶段期间将第二数据值（d）写入主级的相同时钟周期的读取阶段（Phi2 = 1）期间从第一数据值（d）读出第一数据值（d）（Phi3 = 1 ）。三相NVFF包括用于控制从站的初始化阶段（Phil = 1），读取相位（Phi2 = 1）和写入阶段（Phi3 = 1）的三个控制信号（Phi 1,2,3））。

7. 发明申请

WO2015116415A1 MULTI-LEVEL CELL DESIGNS FOR HIGH DENSITY LOW POWER GSHE-STT MRAM 审中-公开
标题翻译：用于高密度低功率GSHE-STT MRAM的多级电池设计
公开(公告)号：WO2015116415A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/011898
申请日：2015-01-19
申请人： QUALCOMM INCORPORATED
发明人： WU, Wenqing , YUEN, Kendrick Hoy Leong , ARABI, Karim
IPC分类号： G11C11/18 , G11C11/56
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/18 , G11C11/5607 , H01L43/14
摘要： Systems and methods are directed to multi-level cell (MLC) comprising: two or more programmable elements coupled to a common access transistor, wherein each one of the two or more programmable elements has a corresponding unique set of two or more switching resistances and two or more switching currents characteristics, such that combinations of the two or more programmable elements configured in the respective two or more switching resistance correspond to multi-bit binary states controllable by passing switching currents through the common access transistor. Each one of the two or more programmable elements includes one or more hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) cell, with two or more hybrid GSHE-STT MRAM cells coupled in parallel.
摘要翻译：系统和方法涉及多级单元（MLC），其包括：耦合到公共存取晶体管的两个或多个可编程元件，其中两个或多个可编程元件中的每一个具有两个或更多个开关电阻的对应唯一集合，以及两个或更多的开关电流特性，使得在相应的两个或更多个开关电阻中配置的两个或多个可编程元件的组合对应于通过将开关电流通过公共存取晶体管而可控的多位二进制状态。两个或多个可编程元件中的每一个包括一个或多个混合巨型旋转霍尔效应（GSHE） - 转移转矩（STT）磁阻随机存取存储器（MRAM）单元，其中两个或更多个并联的GSHE-STT MRAM单元并联。

8. 发明申请

WO2014130301A1 STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD 审中-公开
标题翻译：通过切换电流感应磁场增强STT-MRAM设计
公开(公告)号：WO2014130301A1
公开(公告)日：2014-08-28
申请号：PCT/US2014/015858
申请日：2014-02-11
申请人： QUALCOMM INCORPORATED
发明人： XIA, William H. , WU, Wenqing , YUEN, Kendrick H. , BANERJEE, Abhishek , LI, Xia , KANG, Seung H. , KIM, Jung Pill
IPC分类号： H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693 , H01L43/08 , H01L43/12
摘要： A memory cell (200) includes an elongated first electrode (206) coupled to a magnetic tunnel junction (MTJ) structure (210) and an elongated second electrode (212) aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
摘要翻译：存储单元（200）包括耦合到磁隧道结（MTJ）结构（210）的细长第一电极（206）和与耦合到MTJ结构的细长第一电极对准的细长第二电极（212）。细长电极被配置为引导开关电流感应磁场的相互添加部分通过MTJ。响应于开关电流的应用，相互添加的部分增强了MTJ的切换。

9. 发明申请

WO2011143305A1 SCALABLE SCHEDULER ARCHITECTURE FOR CHANNEL DECODING 审中-公开
标题翻译：用于信道解码的可调度调度器架构
公开(公告)号：WO2011143305A1
公开(公告)日：2011-11-17
申请号：PCT/US2011/036059
申请日：2011-05-11
申请人： QUALCOMM Incorporated , CHANG, Wei-Hsin , PAN, Hanfang , HOWARD, Michael Alexander , WU, Wenqing , FUCHS, Robert Jason
发明人： CHANG, Wei-Hsin , PAN, Hanfang , HOWARD, Michael Alexander , WU, Wenqing , FUCHS, Robert Jason
IPC分类号： H04L1/00
CPC分类号： H04L1/0052
摘要： Certain aspects of the present disclosure relate to a method for processing wireless communications. According to one aspect, a processing unit may receive a plurality of code blocks of a transport block and schedule the plurality of code blocks to be decoded in parallel with a plurality of decoders. Each decoder decodes at least one code block as an independent tasks. The processing unit further collects the decoded information bits from the plurality of decoders and forwards the collected decoded information bits for further processing. In one aspect, the processing unit includes an output agent to temporarily store the decoded information bits while waiting for all code blocks of the transport block to be decoded.
摘要翻译：本公开的某些方面涉及一种用于处理无线通信的方法。根据一个方面，处理单元可以接收传输块的多个码块，并且与多个解码器并行地调度要解码的多个码块。至少一个解码器解码至少一个代码块作为独立任务。处理单元进一步从多个解码器中收集解码的信息比特，并且转发所收集的解码信息比特用于进一步处理。一方面，处理单元包括一个输出代理，用于临时存储解码的信息位，同时等待传输块的所有代码块被解码。

10. 发明申请

WO2011140471A1 METHOD AND APPARATUS OF PROBABILISTIC PROGRAMMING MULTI-LEVEL MEMORY IN CLUSTER STATES OF BI-STABLE ELEMENTS 审中-公开
标题翻译：双稳态元素集群状态下的可编程序编程多级存储器的方法与装置
公开(公告)号：WO2011140471A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/035568
申请日：2011-05-06
申请人： QUALCOMM Incorporated , WU, Wenqing , YUEN, Kendrick H. , ZHU, Xiaochun , KANG, Seung H. , NOWAK, Matthew Michael , LEVIN, Jeffrey A. , GILMORE, Robert , YU, Nicholas
发明人： WU, Wenqing , YUEN, Kendrick H. , ZHU, Xiaochun , KANG, Seung H. , NOWAK, Matthew Michael , LEVIN, Jeffrey A. , GILMORE, Robert , YU, Nicholas
IPC分类号： G11C11/16 , G11C11/56
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/54 , G11C11/5607
摘要： A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.
摘要翻译：将概率编程电流注入到双稳定概率开关元件簇中，概率编程电流具有设置为导致任何给定双稳态开关元件切换的小于一概率的参数，以及bi的簇的电阻 - 检测到稳定的开关元件。注入概率编程电流，并检测到簇状态的电阻，直到满足终止条件。可选地，终止条件是以表示多位数据的值检测双稳态开关元件群的电阻。

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