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1. 发明申请

WO2018002035A2 METHOD OF PROCESSING WAFER 审中-公开
标题翻译：处理晶片的方法
公开(公告)号：WO2018002035A2
公开(公告)日：2018-01-04
申请号：PCT/EP2017/065825
申请日：2017-06-27
申请人： PRIEWASSER, Karl Heinz
发明人： PRIEWASSER, Karl Heinz
IPC分类号： H01L21/78 , H01L21/683
摘要： The invention relates to a method of processing a wafer (W), having a first side (1) with a device area (2) comprising a plurality of devices, and a second side (6) being opposite to the first side (1), wherein the second side (6) has a plurality of protrusions (14) protruding along a thickness direction of the wafer (W). The method comprises providing a protective film (4), providing a base sheet (7) having a cushioning layer (13) applied to a front surface (17) thereof, attaching a front surface of the protective film (4) to the second side (6) of the wafer (W), wherein the protective film (4) is adhered to at least a peripheral portion of the second side (6) with an adhesive (9), and attaching a back surface of the protective film (4) opposite to the front surface thereof to the cushioning layer (13). The protrusions (14) protruding along the thickness direction of the wafer (W) are embedded in the cushioning layer (13) and a back surface (18) of the base sheet (7) opposite to the front surface (17) thereof is substantially parallel to the first side (1) of the wafer (W). The method further comprises processing the first side (1) of the wafer (W).
摘要翻译：本发明涉及一种处理晶片（W）的方法，该晶片（W）具有第一面（1）和第二面（6），该第一面具有包括多个器件的器件区域（2）与所述第一侧（1）相对，其中所述第二侧（6）具有沿着所述晶片（W）的厚度方向突出的多个突起（14）。该方法包括提供保护膜（4），提供具有施加到其前表面（17）上的缓冲层（13）的基片（7），将保护膜（4）的前表面附接到第二侧（6）的保护膜（4）的至少一个周边部分粘附到所述晶片（W）的所述背面（6），并且将所述保护膜（4）的背面附着到所述晶片）相对于其缓冲层（13）的前表面相对。沿着晶片（W）的厚度方向突出的突起（14）嵌入在缓冲层（13）中并且基片（7）的与其前表面（17）相对的后表面（18）基本上平行于晶片（W）的第一侧（1）。该方法还包括处理晶片（W）的第一面（1）。

2. 发明申请

WO2017036512A1 METHOD OF PROCESSING WAFER AND PROTECTIVE SHEETING FOR USE IN THIS METHOD 审中-公开
标题翻译：在本方法中使用的加工方法和保护层
公开(公告)号：WO2017036512A1
公开(公告)日：2017-03-09
申请号：PCT/EP2015/069854
申请日：2015-08-31
申请人： PRIEWASSER, Karl Heinz
发明人： PRIEWASSER, Karl Heinz
IPC分类号： H01L21/78 , H01L21/68 , H01L21/683
CPC分类号： H01L21/78 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： The invention relates to a method of processing a wafer (w), having on one side (1) a device area (2) with a plurality of devices, partitioned by a plurality of division lines (11), and a peripheral marginal area (3) having no devices and being formed around the device area (2), wherein the device area (2) is formed with a plurality of protrusions (14) protruding from a plane surface of the wafer (W). The method comprises providing a protective film (4), providing a base sheet (7) having a cushioning layer (13) applied to a front surface (17) thereof, attaching a front surface of the protective film (4), for covering the devices on the wafer (W), to the one side (1) of the wafer (W), wherein the protective film (4) is adhered to at least the peripheral marginal area (3) with an adhesive (9), and attaching a back surface of the protective film (4) opposite to the front surface thereof to the cushioning layer (13). The protrusions (14) protruding from the plane surface of the wafer (W) are embedded in the cushioning layer (13) and a back surface (18) of the base sheet (7) opposite to the front surface (17) thereof is substantially parallel to the side (6) of the wafer (W) being opposite to the one side (1). The method further comprises grinding the side (6) of the wafer (W) being opposite to the one side (1) for adjusting the wafer thickness. The invention further relates to a protective sheeting (5, 5') for use in such a processing method.
摘要翻译：本发明涉及一种处理晶片（w）的方法，该方法在一侧（1）具有由多个分割线（11）分隔的多个器件的器件区域（2）和周边边缘区域 3）在设备区域（2）周围没有设备并形成设备区域（2），其中设备区域（2）形成有从晶片（W）的平面突出的多个突起（14）。该方法包括提供保护膜（4），提供具有施加到其前表面（17）上的缓冲层（13）的基片（7），附着在保护膜（4）的前表面上，以覆盖将晶片（W）上的器件（W）连接到晶片（W）的一侧（1），其中保护膜（4）用粘合剂（9）粘附到至少周边边缘区域（3）保护膜（4）的与其前表面相对的缓冲层（13）的背面。从晶片（W）的平面突出的突起（14）嵌入在缓冲层（13）中，与其前表面（17）相对的基片（7）的后表面（18）基本上平行于晶片（W）的与一侧（1）相对的侧面（6）。该方法还包括研磨晶片（W）的与一侧（1）相对的侧面（6），以调整晶片厚度。本发明还涉及一种用于这种加工方法的保护片（5,5'）。

3. 发明申请

WO2018210426A1 PROTECTIVE SHEETING FOR USE IN PROCESSING WAFER, HANDLING SYSTEM FOR WAFER, AND COMBINATION OF WAFER AND PROTECTIVE SHEETING 审中-公开
公开(公告)号：WO2018210426A1
公开(公告)日：2018-11-22
申请号：PCT/EP2017/061997
申请日：2017-05-18
申请人： PRIEWASSER, Karl Heinz
发明人： PRIEWASSER, Karl Heinz
IPC分类号： H01L21/67 , H01L21/78 , H01L21/304 , H01L21/683
摘要： The invention relates to a protective sheeting (10, 110, 210, 310, 410) for use in processing a semiconductor-sized wafer (W). The protective sheeting (10, 110, 210, 310, 410) comprises a protective film (4) and a cushioning layer (8) attached to a back surface (4b) of the protective film (4). At least in a central area of the protective sheeting (10, 10, 210, 310, 410), no adhesive is applied to a front surface (4a) and a back surface (8b, 9b) of the protective sheeting (10, 110, 210, 310, 410), the central area having an outer diameter which is equal to or larger than an outer diameter of the semiconductor-sized wafer (W). Further, the invention relates to a protective sheeting (10, 310, 410) for use in processing a wafer (W), the protective sheeting (10, 310, 410) comprising a protective film (4) and a cushioning layer (8) attached to a back surface (4b) of the protective film (4), wherein, on an entire front surface (4a) and an entire back surface (8b, 9b) of the protective sheeting (10, 310, 410), no adhesive is applied. Moreover, the invention relates to a handling system for a semiconductor-sized wafer (W) and to a combination comprising a wafer (W) and the protective sheeting (10, 110, 210, 310, 410).

4. 发明申请

WO2018002035A3 METHOD OF PROCESSING WAFER HAVING PROTRUSIONS ON THE BACK SIDE 审中-公开
公开(公告)号：WO2018002035A3
公开(公告)日：2018-01-04
申请号：PCT/EP2017/065825
申请日：2017-06-27
申请人： PRIEWASSER, Karl Heinz
发明人： PRIEWASSER, Karl Heinz
IPC分类号： H01L21/78 , H01L21/683
摘要： The invention relates to a method of processing a wafer (W), having a first side (1 ) with a device area and a second side (6) having a plurality of protrusions (14). The method comprises providing a protective film (4), providing a base sheet (7) having a cushioning layer (13) applied to a front surface (17) thereof, attaching a front surface of the protective film (4) to the second side (6) of the wafer (W), and attaching a back surface of the protective film (4) opposite to the front surface thereof to the cushioning layer (13). The protrusions (14)are embedded in the cushioning layer (13) and a back surface (18) of the base sheet (7)thereof is substantially parallel to the first side (1 ) of the wafer (W).

5. 发明申请

WO2016107630A1 PROTECTIVE SHEETING FOR USE IN PROCESSING A SEMICONDUCTOR-SIZED WAFER AND SEMICONDUCTOR-SIZED WAFER PROCESSING METHOD 审中-公开
标题翻译：用于处理半导体尺寸波形和半导体尺寸波形处理方法的保护层
公开(公告)号：WO2016107630A1
公开(公告)日：2016-07-07
申请号：PCT/EP2014/079367
申请日：2014-12-29
申请人： PRIEWASSER, Karl Heinz
发明人： PRIEWASSER, Karl Heinz
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/6836 , B81C1/00896 , H01L21/268 , H01L21/304 , H01L21/67132 , H01L21/6835 , H01L21/78 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2221/68386
摘要： The invention relates to a protective sheeting (10) for use in processing a semiconductor-sized wafer (W). The protective sheeting (10) comprises a substantially circular base sheet (12) and a substantially annular adhesive layer (14) applied to a peripheral portion of a first surface of the base sheet (12). The inner diameter of the adhesive layer (14) is smaller than the diameter of the semiconductor- sized wafer (W). Further, the outer diameter of the adhesive layer (14) is larger than the inner diameter of a semiconductor-sized annular frame (20) for holding the semiconductor-sized wafer (W). The invention further relates to a semiconductor-sized wafer processing method comprising the steps of attaching the protective sheeting (10) to a front side (50) or a back side (52) of the semiconductor- sized wafer (W) via the adhesive layer (14) on the first surface of the base sheet (12) so that an inner peripheral portion of the adhesive layer (14) adheres to an outer peripheral portion of the front side (50) or the back side (52) of the wafer (W), and processing the wafer (W) after the protective sheeting (10) has been attached to the front side (50) or the back side (52) thereof.
摘要翻译：本发明涉及一种用于加工半导体尺寸晶片（W）的保护片（10）。保护片（10）包括基本上圆形的基片（12）和施加到基片（12）的第一表面的周边部分的基本环形的粘合剂层（14）。粘合剂层（14）的内径小于半导体尺寸晶片（W）的直径。此外，粘合剂层（14）的外径大于用于保持半导体尺寸的晶片（W）的半导体尺寸的环形框架（20）的内径。本发明还涉及一种半导体尺寸的晶片处理方法，包括以下步骤：通过粘合剂层将保护片（10）附接到半导体尺寸的晶片（W）的前侧（50）或背面（52）（14）的第一表面上，使得粘合剂层（14）的内周部分粘合到晶片的前侧（50）或背面（52）的外周部分（W），并且在保护片（10）已经附接到其前侧（50）或其后侧（52）之后处理晶片（W）。

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