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1. 发明申请

WO2018206084A1 METHOD FOR FABRICATING A LIGHT EMITTING SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：WO2018206084A1
公开(公告)日：2018-11-15
申请号：PCT/EP2017/061006
申请日：2017-05-09
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： SAAD, Mohd Jamzira , KOAY, Seong Tak , LIM, Choon Kim , TIEW, Yeow Chong , CHONG, Chui Wai
IPC分类号： H01L33/52 , H01L33/60
CPC分类号： H01L33/52 , H01L33/60 , H01L2933/005
摘要： Method for fabricating a light emitting semiconductor chip, wherein a carrier (10) with at least one recess (11) is provided, wherein the recess (11) has a bottom (12) and side walls (13, 14), wherein a light emitting semiconductor structure (1) is put on the bottom of the recess (11), wherein a light transparent material is filled in the recess (11) covering the semiconductor structure (1), wherein the light transparent material is cured to a cover layer of the semiconductor structure, wherein the semiconductor structure (1) with the cover layer is removed from the carrier and put with the cover layer on a further carrier, wherein side faces of the cover layer are covered with a reflective layer, wherein mould material is deposited on the reflective layer forming the semiconductor chip.

2. 发明申请

WO2019007513A1 METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT 审中-公开
公开(公告)号：WO2019007513A1
公开(公告)日：2019-01-10
申请号：PCT/EP2017/066950
申请日：2017-07-06
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： LIM, Choo Kean , OR, Choon Keat , LIM, Choon Kim , CHAN, Ai Cheng
IPC分类号： H01L33/00 , H01L33/48 , H01L33/52 , H01L33/50 , H01L33/60 , H01L33/62
摘要： According to at least one embodiment the method for producing an optoelectronic component (100) comprises a step A), in which an intermediate film (1) is provided. In a step B) a plurality of optoelectronic semiconductor chips (2) is attached on predetermined locations of the intermediate film (1). In a step C) a cavity film (3) with a plurality of separated openings (30) is provided. In a step D) the cavity film (3) is attached to the intermediate film (1) such that each optoelectronic semiconductor chip (2) is associated with a respective opening (30). The cavity film (3) is thicker than the optoelectronic semiconductor chips (2) such that the cavity film (3) exceeds the optoelectronic semiconductor chips (2) in a direction away from the intermediate film (1). In a step E) a casting material (4) is filled in each of the openings (30) such that the optoelectronic semiconductor chips (2) are casted with the casting material (4). In a step F) the intermediate film (1) is removed.

3. 发明申请

WO2018162075A1 METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
公开(公告)号：WO2018162075A1
公开(公告)日：2018-09-13
申请号：PCT/EP2017/055672
申请日：2017-03-10
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： SAAD, Mohd Jamzira , KOAY, Seong Tak , LIM, Choon Kim
IPC分类号： H01L33/50
CPC分类号： H01L33/505 , H01L2933/0041 , H01L2933/005
摘要： A method for producing an optoelectronic semiconductor component comprises steps for providing a first carrier with an upper side, the upper side of the first carrier comprising a recess,arranging a sheet of wavelength converting material on the upper side of the first carrier, providing a second carrier with an upper side, arranging an optoelectronic semiconductor chip on the upper side of the second carrier, arranging a casting material above the sheet of wavelength converting material in the recess of the first carrier, arranging the second carrier above the first carrier, such that the upper side of the second carrier faces the upper side of the first carrier, wherein the optoelectronic semiconductor chip is immersed in the casting material, and removing the first carrier and the second carrier to obtain a compound body comprising the casting material, the optoelectronic semiconductor chip and the sheet of wavelength converting material.

4. 发明申请

WO2018219460A1 METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE 审中-公开
公开(公告)号：WO2018219460A1
公开(公告)日：2018-12-06
申请号：PCT/EP2017/063294
申请日：2017-06-01
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： NG, Geok Ling Adelene , KOAY, Seong Tak , CHONG, Chui Wai , CHUAH, Teng Hai Ocean , LIM, Choon Kim
IPC分类号： H01L33/50
CPC分类号： H01L33/505 , H01L2933/0041 , H01L2933/005
摘要： A method for producing an optoelectronic devicecomprises a step, wherein asheetcomprising a wavelength-converting material is provided. Furthermore, at least one optoelectronic semiconductor chip is provided, wherein the optoelectronic semiconductor chip comprises a bottom side. The optoelectronic semiconductor chip is pressedinto the sheetsuch that the optoelectronic semiconductor chip is at least partially em- bedded into the sheet, wherein at least the bottom side re- mains uncovered by the sheet.

5. 发明申请

WO2018036618A1 METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC DEVICES AND OPTOELECTRONIC DEVICE 审中-公开
标题翻译：制造多个光电子器件的方法和光电子器件
公开(公告)号：WO2018036618A1
公开(公告)日：2018-03-01
申请号：PCT/EP2016/069906
申请日：2016-08-23
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： CHONG, Chui Wai , KOAY, Seong Tak , NG, Geok Ling Adelene , CHUAH, Teng Hai , LIM, Choon Kim
IPC分类号： H01L33/48 , H01L33/54 , H01L33/60 , H01L33/00 , H01L33/50
CPC分类号： H01L33/60 , H01L33/0095 , H01L33/486 , H01L33/505 , H01L33/508 , H01L33/54 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
摘要： A method for producing a plurality of optoelectronic devices with the following steps is provided: - providing a premolded frame (1) formed from a plastic material on a carrier (5), said premolded frame (1) having a plurality of frame elements (2), each frame element (2) having an opening (3), penetrating completely through the frame element (2), - attaching at least one semiconductor chip (8) in each opening (3), such that a frame-chip compound is generated, - filling the openings (3) at least partially with a resin (17), and - separating the frame-chip compound such that a plurality of optoelectronic devices is generated. Further, an optoelectronic device is provided.
摘要翻译：提供一种用于通过以下步骤制造多个光电子器件的方法： - 提供由载体（5）上的塑料材料形成的预成型框架（1），所述预成型框架（1）具有多个框架元件（2），每个框架元件（2）具有完全穿过框架元件（2）的开口（3）， - 在每个开口（3）中附接至少一个半导体芯片（8）使得产生框架 - 芯片化合物， - 用树脂（17）至少部分地填充开口（3），以及 - 分离框架 - 芯片化合物，使得产生多个光电子器件。此外，提供了光电子器件。

6. 发明申请

WO2019179618A1 OPTOELECTRONIC DEVICE COMPRISING A PHOSPHOR PLATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：WO2019179618A1
公开(公告)日：2019-09-26
申请号：PCT/EP2018/057191
申请日：2018-03-21
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： LIM, Choon Kim
IPC分类号： H01L33/00 , H01L33/50 , H01L33/38 , H01L27/15 , H01L33/44 , H01L25/16
摘要： An optoelectronic device (10) comprises: a phosphor plate (120), an optoelectronic chip (25) comprising a layer stack of a first optoelectronic semiconductor layer (101) and a second optoelectronic semiconductor layer (102), a first electrode (131) being electrically connected to the first semiconductor layer (101), and a second electrode (132) being electrically connected to the second semiconductor layer (102). The optoelectronic chip (25) is attached to the phosphor plate (120), so that the second semiconductor layer (102) is arranged between the phosphor plate (120) and the first semiconductor layer (101). The first electrode (131) and the second electrode (132) are arranged on a first main surface (110) of the first semiconductor layer (101) on a side remote from the phosphor plate (120). The first electrode (131) directly contacts the first semiconductor layer (101). Also disclosed are: a method of manufacturing the same, and an integrated circuit incorporating the same.

7. 发明申请

WO2019114968A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A CARRIER ELEMENT SUITABLE FOR A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2019114968A1
公开(公告)日：2019-06-20
申请号：PCT/EP2017/082814
申请日：2017-12-14
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： LIM, Choo Kean , OR, Choon Keat , CHUA, Siew Yan , LIM, Choon Kim
IPC分类号： H01L33/62 , H01L33/64 , H01L23/367 , H01L23/373 , H05K1/05
摘要： A semiconductor device (1) is described comprising - a carrier element (2) comprising - a carrier layer (4) comprising a first depression (5) extending from a first main surface (4A) of the carrier layer (4) in a direction of a second main surface (4B) of the carrier layer (4) opposite the first main surface (4A), and further comprising a metal substrate (7) and an electrically insulating layer (8) on at least a portion of the metal substrate (7), - a first electrically conductive filling component (9) arranged in the first depression (5) in a form-fitting manner, the electrically insulating layer (8) being arranged between the metal substrate (7) and the first filling component (9), - a semiconductor chip (3) being arranged on the carrier element (2), wherein the electrically insulating layer (8) is an anodization layer. And a method for producing a carrier element (2) suitable for a semiconductor device (1) is described.

8. 发明申请

WO2018215068A1 LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING A LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：WO2018215068A1
公开(公告)日：2018-11-29
申请号：PCT/EP2017/062646
申请日：2017-05-24
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： LIM, Choon Kim , LIM, Choo Kean , TEOH, Hui Chiang
IPC分类号： H01L33/50
摘要： The invention refers to a light emitting device (100) comprising a semiconductor chip (1) having a main radiation surface (10), which emits UV light (5) in operation,a phosphor (2), which is arranged in the radiation beam of the UV light (5), absorbs partially the UV light (5), wherein the phosphor (2) converts the UV light (5) into visible light (6), so that the device emits mixed light comprising the UV light (5) as well as visible light (6).

9. 发明申请

WO2018153464A1 SENSOR ELEMENT 审中-公开
公开(公告)号：WO2018153464A1
公开(公告)日：2018-08-30
申请号：PCT/EP2017/054234
申请日：2017-02-23
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： LIM, Choon Kim , LIM, Choo Kean , GO, Jeok Pheng
IPC分类号： H01L25/16
摘要： Sensor element with a light emitting semiconductor chip, wherein the semiconductor chip is arranged with a mounting face on a mounting face of a substrate, wherein the semi conductor chip has a smaller mounting face than the substrate, wherein a border area of the mounting face of the substrate circumvents the semiconductor chip, wherein on a bottom side of the semiconductor chip electrical contacts are arranged, wherein the substrate is transparent for the radiation of the semiconductor chip, wherein the bottom side of the semi conductor chip is arranged on a mounting side of a carrier, wherein the carrier comprises further electrical contacts on the mounting side, wherein the contacts of the semiconductor chip and the contacts of the carrier are connected, wherein between the mounting side of the carrier and the border area of the substrate a sealing member is arranged, wherein the sealing member seals a sealing area between the substrate and the carrier, wherein the semiconductor chip is arranged in the sealing area, wherein a recess is arranged in the mounting side of the carrier, wherein the recess is arranged beside the semiconductor chip and within the sealing area, wherein an optoelectronic sensor is arranged in the recess.

10. 发明申请

WO2018113922A1 LIGHT EMITTING ELEMENT WITH AN OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：WO2018113922A1
公开(公告)日：2018-06-28
申请号：PCT/EP2016/081927
申请日：2016-12-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： LIM, Choon Kim
IPC分类号： H01L33/52 , H01L33/20
CPC分类号： H01L33/52 , H01L33/20
摘要： A light emitting element with an optoelectronic semiconductor chip is provided, wherein the semiconductor chip has a substrate and a semiconductor structure, wherein the semiconductor structure is arranged with a mounting surface on a mounting surface of the substrate, wherein the semiconductor structure has a smaller mounting surface than the substrate, wherein a border area of the mounting face of the substrate circumvents the semiconductor structure, wherein the semiconductor structure is embodied to generate electromagnetic radiation, wherein on an upper side of the semiconductor structure electrical contacts are arranged, wherein the substrate is transparent for the radiation of the semiconductor structure, wherein the upper side of the semiconductor structure is arranged on a mounting side of a carrier, wherein the carrier comprises further electrical contacts on the mounting side, wherein the contacts of the semiconductor structure and the contacts of the carrier are connected, wherein between the mounting side of the carrier and the border area of the substrate a sealing member is arranged, wherein the sealing member seals a sealing area between the substrate and the carrier, wherein the semiconductor structure is arranged in the sealing area.

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