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1. 发明申请

WO2006099171A2 NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：新型GeSiSn基化合物，模板和半导体结构
公开(公告)号：WO2006099171A2
公开(公告)日：2006-09-21
申请号：PCT/US2006008654
申请日：2006-03-10
申请人： NG ON BEHALF OF ARIZONA STATE , KOUVETAKIS JOHN , ROUCKA RADEK
发明人： KOUVETAKIS JOHN , ROUCKA RADEK
CPC分类号： C23C16/0272 , C23C16/301 , C23C16/42 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02502 , H01L21/02532 , H01L21/02535 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/0262 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/22 , H01L29/267 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/101 , Y02E10/544 , Y02E10/547
摘要： The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01
摘要翻译：本发明提供式Gei-x-ySixSny的新型化合物，其中0.01

2. 发明申请

WO2008086210A3 ZIRCONIUM AND HAFNIUM BORIDE ALLOY TEMPLATES ON SILICON FOR NITRIDE INTEGRATION APPLICATIONS 审中-公开
标题翻译：用于氮化物积分应用的硅的氮化硼和铪硼合金模板
公开(公告)号：WO2008086210A3
公开(公告)日：2009-12-30
申请号：PCT/US2008050280
申请日：2008-01-04
申请人： UNIV ARIZONA STATE , KOUVETAKIS JOHN , ROUCKA RADEK
发明人： KOUVETAKIS JOHN , ROUCKA RADEK
IPC分类号： C01B35/04 , C22C16/00 , C22C27/00
CPC分类号： H01L29/24 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Methods are provided for preparing epitaxial AlGaN layers at temperatures less than about 800 0C. Generally, a substrate is contacted with H2GaN3, D2GaNs, or mixtures thereof in the presence of an Al source at a suitable temperature and pressure to form an epitaxial AlxGai_xN layer. Further, semiconductor structures are provided comprising, a stack comprising a plurality of repeating alloy layers, formed over a substrate, wherein the repeating alloy layers comprise two or more alloy layer types, wherein at least one alloy layer type comprises a ZrzHfyAl1_z_yB2, alloy layer, wherein the sum of z and y is less than or equal to 1, and the thickness of the stack is greater than about 50 nm.
摘要翻译：提供了在低于约800℃的温度下制备外延AlGaN层的方法。通常，在Al源的存在下，在合适的温度和压力下，将衬底与H 2 GaN 3，D 2 GaN或其混合物接触以形成外延Al x Ga 1-x N层。此外，提供半导体结构，其包括形成在衬底上的多个重复合金层的叠层，其中所述重复合金层包括两种或更多种合金层类型，其中至少一种合金层类型包括ZrzHfyAl1_z_yB2，合金层，其中z和y的和小于或等于1，并且所述叠层的厚度大于约50nm。

3. 发明申请

WO2012068451A3 DILUTE SN-DOPED GE ALLOYS 审中-公开
公开(公告)号：WO2012068451A3
公开(公告)日：2013-06-13
申请号：PCT/US2011061375
申请日：2011-11-18
申请人： UNIV ARIZONA , KOUVETAKIS JOHN , BEELER RICHARD , MENENDEZ JOSE , ROUCKA RADEK
发明人： KOUVETAKIS JOHN , BEELER RICHARD , MENENDEZ JOSE , ROUCKA RADEK
IPC分类号： H01L31/074 , H01L31/028 , H01L31/105 , H01L31/107 , H01L31/18
CPC分类号： H01L29/12 , H01L21/02104 , H01L31/028 , H01L31/105 , H01L31/1075 , H01L31/1812 , Y02E10/547
摘要： Detectors based on Ge(Sn) alloys of the formula Gei-xSnx (e.g., 0
摘要翻译：基于Ge-xSnx（例如，0

4. 发明申请

WO2004073045A2 EPITAXIAL GROWTH OF GROUP III NITRIDES ON SILICON SUBSTRATES VIA A REFLECTIVE LATTICE-MATCHED ZIRCONIUM DIBORIDE BUFFER LAYER 审中-公开
标题翻译：通过反射式匹配的ZIRCONIUM DIBORIDE BUFFER层的硅基体上的III族氮化物的外延生长
公开(公告)号：WO2004073045A2
公开(公告)日：2004-08-26
申请号：PCT/US2004004605
申请日：2004-02-12
申请人： UNIV ARIZONA STATE , TSONG IGNATIUS S T , KOUVETAKIS JOHN , TOLLE JOHN , ROUCKA RADEK
发明人： TSONG IGNATIUS S T , KOUVETAKIS JOHN , TOLLE JOHN , ROUCKA RADEK
IPC分类号： C30B25/02 , C30B29/10 , H01L21/20 , H01L33/00 , H01L
CPC分类号： C30B25/02 , C30B29/10 , H01L21/0237 , H01L21/02439 , H01L21/02491 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film formed by epitaxy over the buffer layer. The buffer layer is reflective and conductive. The buffer layer may comprise B an element selected from the group consisting of Zr, Hf, Al. For example, the buffer layer may comprise ZrB2, AlB2 or HfB2. The buffer layer provides a lattice match with the group III nitride layer. The substrate can comprise silicon, silicon carbide (SiC), gallium arsenide (GaAs), sapphire or A12O3. The group III nitride material includes GaN, A1N, InN, A1GaN, InGaN or A1InGaN and can form an active region. In a presently preferred embodiment, the buffer layer is ZrB2 and the substrate is Si(111) or Si(100) and the group l[II nitride layer comprises GaN. The ZrB2 buffer layer provides a reflective and conductive buffer layer that has a small lattice mismatch with GaN. The semiconductor structure can be used to fabricate active microelectronic devices, such as transistors including field effect transistors and bipolar transistors. The semiconductor structure also can be used to fabricate optoelectronic devices, such as laser diodes and light emitting diodes
摘要翻译：提供了一种用于将宽带隙氮化物与硅结合的半导体结构和制造方法。该结构包括衬底，通过衬底上的外延形成的单晶缓冲层和通过缓冲层上的外延形成的III族氮化物膜。缓冲层是反射和导电的。缓冲层可以包含选自由Zr，Hf，Al组成的组的元素。例如，缓冲层可以包括ZrB2，AlB2或HfB2。缓冲层提供与III族氮化物层的晶格匹配。衬底可以包括硅，碳化硅（SiC），砷化镓（GaAs），蓝宝石或A12O3。 III族氮化物材料包括GaN，AlN，InN，AlGaN，InGaN或AlInGaN，并且可以形成有源区。在目前优选的实施方案中，缓冲层是ZrB 2，衬底是Si（111）或Si（100），第1组[II族氮化物层包括GaN。 ZrB2缓冲层提供与GaN具有小的晶格失配的反射和导电缓冲层。半导体结构可用于制造有源微电子器件，例如包括场效应晶体管和双极晶体管的晶体管。该半导体结构也可用于制造诸如激光二极管和发光二极管之类的光电器件

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