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1. 发明申请

WO1981001768A1 REDUNDANT MAGNETIC DOMAIN MEMORY USING PARTY 审中-公开
标题翻译：使用方的冗余磁性记忆体
公开(公告)号：WO1981001768A1
公开(公告)日：1981-06-25
申请号：PCT/US1980001664
申请日：1980-12-09
申请人： NCR CORP
发明人： NCR CORP , ELLSWORTH W
IPC分类号： G11C19/08
CPC分类号： G11C29/86 , G06F11/1032 , G11C19/0875
摘要： A magnetic bubble domain memory device that includes a magnetic domain data chip having a major-minor (20, 26) loop organization with on-chip firmware providing redundancy information enabling the use of the chip even though one or more defective minor loops may be present thereon. One of the pages (68) is written in the minor loop (26), where a page is defined as a common bit position in each of the plurality of minor loops, with a series of magnetic domains having an odd total number. The next succeeding page (70) in the minor loops contains a series of magnetic domains and voids which are representative of the loop numbers of defective minor loops on the chip with the remaining pages (72) in the minor loop having an even number of magnetic domains contained in each of the pages. Collectively, the pages containing the odd and even number of magnetic domains together with the page containing the map of the defective minor loops comprise the on-chip firmware providing redundancy information. This magnetic domain structure is capable of screening out defective minor loops in the read and write operation, and enables synchronization of the magnetic domain device such that a selected page of data may be readily accessed from a plurality of minor loops when desired.

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