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1. 发明申请

WO2008147710A1 GATE ELECTRODE FOR A NONVOLATILE MEMORY CELL 审中-公开
标题翻译：用于非易失性存储单元的门电极
公开(公告)号：WO2008147710A1
公开(公告)日：2008-12-04
申请号：PCT/US2008/063736
申请日：2008-05-15
申请人： NANOSYS, INC. , DUAN, Xiangfeng , CHEN, Jian , PARCE, J., Wallace , LEON, Francisco, A.
发明人： DUAN, Xiangfeng , CHEN, Jian , PARCE, J., Wallace , LEON, Francisco, A.
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L29/792 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/42332 , H01L29/7883 , H01L29/7885
摘要： A nonvolatile memory cell includes a substrate comprising a source, drain, and channel between the source and the drain. A tunnel dielectric layer overlies the channel, and a localized charge storage layer is disposed between the tunnel dielectric layer and a control dielectric layer. A gate electrode has a first surface adjacent to the control dielectric layer, and the first surface includes a midsection and two edge portions. According to one embodiment, the midsection defines a plane, and at least one edge portion extends away from the plane. Preferably, the edge portion extending away from the plane converges toward an opposing second surface of the gate electrode. According to another embodiment, the gate electrode of the nonvolatile memory cell includes a first sublayer and a second sublayer of a different width on the first sublayer.
摘要翻译：非易失性存储单元包括在源极和漏极之间包括源极，漏极和沟道的衬底。隧道介电层覆盖在沟道上，并且局部电荷存储层设置在隧道介电层和控制电介质层之间。栅电极具有与控制电介质层相邻的第一表面，并且第一表面包括中部和两个边缘部分。根据一个实施例，中段限定一个平面，并且至少一个边缘部分远离平面延伸。优选地，远离平面延伸的边缘部分朝向栅电极的相对的第二表面会聚。根据另一实施例，非易失性存储单元的栅电极包括第一子层和第一子层上具有不同宽度的第二子层。

2. 发明申请

WO2006124055A3 FULLY INTEGRATED ORGANIC LAYERED PROCESSES FOR MAKING PLASTIC ELECTRONICS BASED ON CONDUCTIVE POLYMERS AND SEMICONDUCTOR NANOWIRES 审中-公开
公开(公告)号：WO2006124055A3
公开(公告)日：2006-11-23
申请号：PCT/US2005/034394
申请日：2005-09-22
申请人： NANOSYS, INC. , PAN, Yaoling , LEON, Francisco, A. , STUMBO, David, P.
发明人： PAN, Yaoling , LEON, Francisco, A. , STUMBO, David, P.
IPC分类号： H01L51/00
摘要： The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; deposing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; deposing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; deposing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones on the source and drain regions.

3. 发明申请

WO2007059146A3 LED HAVING LATERAL CURRENT INJECTION ACTIVE REGION 审中-公开
公开(公告)号：WO2007059146A3
公开(公告)日：2007-05-24
申请号：PCT/US2006/044221
申请日：2006-11-14
申请人： APPLIED MATERIALS, INC. , WEST, Lawrence, C. , LEON, Francisco, A.
发明人： WEST, Lawrence, C. , LEON, Francisco, A.
IPC分类号： H01L27/15
摘要： A semiconductor device including: a quantum well having photon emission energy level, the quantum well having at least one active layer and two barrier layers, one disposed above the active layer and one disposed below the active layer; and injection regions for injecting electrons into the quantum well, wherein the electrons are cool electrons with respect to the active layer of the quantum well.

4. 发明申请

WO2005001519A2 EMBEDDED WAVEGUIDE DETECTORS 审中-公开
标题翻译：嵌入式波形检测器
公开(公告)号：WO2005001519A2
公开(公告)日：2005-01-06
申请号：PCT/US2004/017061
申请日：2004-05-28
申请人： APPLIED MATERIALS, INC. , LEON, Francisco, A. , MOFFAT, Stephen , WEST, Lawrence, C. , WADA, Yuichi
发明人： LEON, Francisco, A. , MOFFAT, Stephen , WEST, Lawrence, C. , WADA, Yuichi
IPC分类号： G02B
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

5. 发明申请

WO2007027615A1 RIDGE TECHNIQUE FOR FABRICATING AN OPTICAL DETECTOR AND AN OPTICAL WAVEGUIDE 审中-公开
标题翻译：用于制造光学检测器和光波导的RIDGE技术
公开(公告)号：WO2007027615A1
公开(公告)日：2007-03-08
申请号：PCT/US2006/033545
申请日：2006-08-30
申请人： APPLIED MATERIALS, INC. , WEST, Lawrence, C. , WOJCIK, Gregory, L. , LEON, Francisco, A. , CHO, Yonah , GOEBEL, Andreas
发明人： WEST, Lawrence, C. , WOJCIK, Gregory, L. , LEON, Francisco, A. , CHO, Yonah , GOEBEL, Andreas
IPC分类号： G02B6/132 , H01L31/0312
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/1347 , G02B6/136 , G02B2006/12097 , G02B2006/121 , G02B2006/12123 , G02B2006/12176 , H01L31/02327 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.
摘要翻译：一种在基板上制造光波导中的光检测器的方法，所述方法包括：在所述基板的表面上形成至少一层，所述至少一层包括SiGe; 在第一区域上将杂质注入所述至少一个层中以形成用于所述光学检测器的检测器区域; 蚀刻到第一区域和第二区域中的至少一个层中以在第一和第二区域之间形成脊，所述脊限定光学检测器和光波导; 用具有比SiGe低的折射率的介电材料填充第一和第二区域; 并且在用介电材料填充第一和第二区域之后，去除表面材料以形成平坦化的上表面。

6. 发明申请

WO2005010949A2 SOLUTION TO THERMAL BUDGET 审中-公开
标题翻译：解决方案到热预算
公开(公告)号：WO2005010949A2
公开(公告)日：2005-02-03
申请号：PCT/US2004/023624
申请日：2004-07-22
申请人： APPLIED MATERIALS, INC. , WADA, Yuichi , LEON, Francisco, A.
发明人： WADA, Yuichi , LEON, Francisco, A.
IPC分类号： H01L
CPC分类号： G02B6/12004 , B82Y20/00 , C30B29/12 , C30B33/00 , G02B6/12 , G02B6/4214 , G02B6/43 , H01L21/84 , H01L27/1203 , H01L31/035254
摘要： A method of fabricating on optical detector, the method including providing a substrate that includes an optical waveguide formed therein and having a surface for fabricating microelectronic circuitry thereon fabricating microelectronic circuitry on the substrate, the fabricating involving a plurality of sequential process phases; after a selected one of the plurality of sequential process phases has occurred and before the next process phase after the selected one of the plurality of process phases begins, fabricating an optical detector within the optical waveguide; and after fabricating the optical detector in the waveguide, completing the plurality of sequential process phases for fabricating the microelectronic circuitry.
摘要翻译：一种在光学检测器上制造的方法，所述方法包括提供包括其中形成的光波导并具有用于在其上形成微电子电路的表面的衬底的衬底，其在衬底上制造微电子电路，所述制造涉及多个顺序的工艺阶段; 在所述多个顺序处理阶段中的所选择的一个已经发生并且在所述多个处理阶段中所选择的一个处理阶段开始之后的下一个处理阶段之前，在所述光波导内制造光学检测器; 并且在波导中制造光学检测器之后，完成用于制造微电子电路的多个顺序处理阶段。

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