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1. 发明申请

WO1993003503A1 HIGH FREQUENCY JFET AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：高频JFET及其制造方法
公开(公告)号：WO1993003503A1
公开(公告)日：1993-02-18
申请号：PCT/US1992006182
申请日：1992-07-29
申请人： MICROWAVE TECHNOLOGY, INC.
发明人： MICROWAVE TECHNOLOGY, INC. , COGAN, Adrian, I. , THORNTON, Neill, R.
IPC分类号： H01L29/80
CPC分类号： H01L29/408 , H01L21/31155 , H01L29/0619 , H01L29/1066 , H01L29/66901 , H01L29/8083
摘要： The junction field effect transistors (JFETs) of this invention have improved breakdown voltage capability, reduced on-resistance and improved overdrive capability. The on-resistance of JFET (2000) is decreased by ion-implanting an insulating layer (2006A, 2006B, 2006C, 2016D) covering a layer (2002) that contains source (2005) and gate (2003, 2004) regions of the unipolar transistor. To improve the overdrive capability of a JFET (2000) a region of conductivity (2015) opposite to the conductivity of gate region (2003) is formed in the gate region of the transistor. The second junction in gate region (2003) of this invention prevents the gate-to-source junction from becoming forward biaised until higher gate voltages are applied and thereby provides increased overdrive capability. A new method is used to form a guard ring (2050, 2051) surrounding the active area of a JFET (2000). JFET (2000) formed using this method has a guard ring (2050, 2051) of a second conductivity type extending a first distance D1 into a layer (2002) having a first conductivity type and a gate region of the second conductivity type extending a second distance D2 into layer (2002).
摘要翻译：本发明的结型场效应晶体管（JFET）具有改进的击穿电压能力，降低的导通电阻和改进的过驱动能力。通过离子注入绝缘层（2006A，2006B，2006C，2016D），JFET（2000）的导通电阻降低，覆盖层（2002），其包含源（2005）和门（2003,2004）单极区晶体管。为了提高JFET（2000）的过驱动能力，在晶体管的栅极区域中形成与栅极区域（2003）的导电性相反的导电区域（2015）。本发明的栅极区域（2003）中的第二结结构防止了栅极 - 源极结转变成直到更高的栅极电压施加，从而提供了增加的过驱动能力。使用新的方法形成围绕JFET（2000）的有源区的保护环（2050,2051）。使用该方法形成的JFET（2000）具有第二导电类型的保护环（2050,2051），其将第一距离D1延伸到具有第一导电类型的层（2002）中，并且第二导电类型的栅极区域延伸第二导电类型距离D2到层（2002）。

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