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    • 5. 发明申请
    • METHOD AND APPARATUS FOR PROJECTION PRINTING
    • 投影印刷的方法和装置
    • WO2007018464A2
    • 2007-02-15
    • PCT/SE2006/000932
    • 2006-08-08
    • MICRONIC LASER SYSTEMS ABSANDSTRÖM, TorbjörnIVONIN, Igor
    • SANDSTRÖM, TorbjörnIVONIN, Igor
    • G03F7/20
    • G03F7/70291G03F7/701G03F7/70308G03F7/70566
    • A method, apparatus for and a device manufactured by the same, for printing a microlithographic pattern with high fidelity and resolution using simultaneously optimized illuminator and pupil filters having semi-continuous transmission profiles. The optimization can be further improved if the illuminator and pupil filters are polarization selective. The optimization method becomes a linear programming problem and uses a set of relevant features in the merit function. With a suitably chosen merit function and a representative feature set both neutral printing without long-range proximity effects and good resolution of small features can be achieved. With only short-range proximity effects OPC correction is simple and can be done in real time using a perturbation method.
    • 一种用于使用其制造的方法,装置和装置,用于使用具有半连续透射轮廓的同时优化的照明器和瞳孔滤光器,以高保真度和分辨率打印微光刻图案。 如果照明器和光瞳滤光器是偏振选择的,则可以进一步改善优化。 优化方法成为线性规划问题,并在优值函数中使用一组相关特征。 通过适当选择的优点功能和具有代表性的特征,可以实现不具有远距离邻近效应的中性打印和小特征的良好分辨率。 只有短距离邻近效应OPC校正很简单,可以使用扰动方法实时完成。
    • 7. 发明申请
    • PROCESS FOR IMMERSION EXPOSURE OF A SUBSTRATE
    • 基板浸渍曝光的工艺
    • WO2007131792A1
    • 2007-11-22
    • PCT/EP2007/004383
    • 2007-05-16
    • MICRONIC LASER SYSTEMS ABSANDSTRÖM, Torbjörn
    • SANDSTRÖM, Torbjörn
    • G03F7/11G03F1/00
    • G03F7/11G03F7/70341
    • The technology disclosed relates to immersion lithography, in particular to the exposure of masks by deep and vacuum ultraviolet wavelengths with so-called sub-wavelength resolution. It also is likely to be useful for other methods of sub-wavelength lithography such as lithography on silicon wafers, surface-acoustic wave (SAW) and dif tractive optical devices. In particular, it relates to controlling the contact angle between the immersion fluid and the top-most layer of the substrate, which is in contact with immersion fluid, by adding a wetting control layer over the resist layer. It is useful to control this interface, in which issues such as entrainment of bubbles in the immersion fluid and puddles of fluid remaining after immersion have been encountered.
    • 所公开的技术涉及浸没式光刻技术,特别是通过具有所谓的亚波长分辨率的深色和真空紫外线波长曝光掩模。 它也可能对其他亚波长光刻方法有用,例如硅晶片上的光刻,表面声波(SAW)和差动光学器件。 特别地,涉及通过在抗蚀剂层上添加润湿控制层来控制浸没流体和与浸渍流体接触的基底的最上层之间的接触角。 控制该接口是有用的,其中遇到浸没液中夹带气泡和浸没后残留的液体的问题。