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1. 发明申请

WO2003050816A1 ROM EMBEDDED DRAM WITH BIAS SENSING 审中-公开
标题翻译： ROM嵌入式DRAM与偏置感测
公开(公告)号：WO2003050816A1
公开(公告)日：2003-06-19
申请号：PCT/US2002/039713
申请日：2002-12-12
申请人： MICRON TECHNOLOGY INC.
发明人： DERNER, Scott , KURTH, Casey , WALD, Phillip, G.
IPC分类号： G11C11/00
CPC分类号： G11C7/14 , G11C7/06 , G11C17/12 , G11C17/18 , G11C2207/104
摘要： A ROM embedded DRAM that provides ROM cells that can be programmed to a single state. Bias techniques are used to read un-programmed ROM cells accurately. Sense amplifier circuitry can be offset in one embodiment to default to the un-programmed state. In another embodiment, bias circuitry is coupled to bit lines to favor the un-programmed state. Further, a differential pre-charge operation can also be used in another embodiment. The ROM embedded DRAM allows for simplifier fabrication and programming of the ROM cells, while providing accurate dual state functionality.
摘要翻译：一个ROM嵌入式DRAM，提供可以编程为单一状态的ROM单元。偏置技术用于准确读取未编程的ROM单元。在一个实施例中，感测放大器电路可以被偏移到默认的未编程状态。在另一个实施例中，偏置电路耦合到位线以有利于未编程状态。此外，差分预充电操作也可以在另一实施例中使用。 ROM嵌入式DRAM允许ROM细胞的简化制造和编程，同时提供精确的双重状态功能。

2. 发明申请

WO2003050815A1 HALF DENSITY ROM EMBEDDED DRAM 审中-公开
标题翻译：高密度ROM嵌入式DRAM
公开(公告)号：WO2003050815A1
公开(公告)日：2003-06-19
申请号：PCT/US2002/039707
申请日：2002-12-12
申请人： MICRON TECHNOLOGY, INC.
发明人： DERNER, Scott , KURTH, Casey , WALD, Phillip, G.
IPC分类号： G11C11/00
CPC分类号： G11C11/404 , G11C17/12 , G11C2207/104
摘要： A half-density ROM embedded DRAM uses hard programmed non-volatile cells and unprogrammed dynamic cells. By hard programming either a first or second memory cell in a pair of cell, different data states are stored. Two word lines are used to access the memory cell pair. Because one of the cells is hard programmed, sense amplifier circuitry identifies the appropriate data state. The ROM cell can be programmed in numerous different manners. For example, ROM cells can be hard programmed by eliminating cell dielectric to short cell plates to a program voltage, or an electrical plug can be fabricated between the cell plates and shorted to a program voltage. In other embodiments, the ROM cell can be programmed using an anti-fuse programming technique, or by providing a high leakage path (not full short) such as through an active area to the substrate.
摘要翻译：半密度ROM嵌入式DRAM使用硬编程的非易失性单元和未编程的动态单元。通过对一对单元格中的第一或第二存储单元进行硬编程，存储不同的数据状态。两条字线用于访问存储单元对。因为其中一个单元是硬编程的，所以读出放大器电路识别适当的数据状态。 ROM单元可以以多种不同的方式进行编程。例如，ROM单元可以通过将单元电池的电介质消除到编程电压来进行硬编程，或者可以在单元板之间制造电插头并且短路到编程电压。在其他实施例中，ROM单元可以使用反熔丝编程技术进行编程，或者通过向衬底提供诸如通过有源区域的高泄漏路径（非完全短路）。

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