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    • 4. 发明申请
      WO2008002443A1 REPAIRING AND RESTORING STRENGTH OF ETCH-DAMAGED LOW-K DIELECTRIC MATERIALS 审中-公开
    • REPAIRING AND RESTORING STRENGTH OF ETCH-DAMAGED LOW-K DIELECTRIC MATERIALS
    • 蚀刻低K电介质材料的修复和恢复强度
    • WO2008002443A1
    • 2008-01-03
    • PCT/US2007/014435
    • 2007-06-21
    • LAM RESEARCH CORPORATION , DEYOUNG, James
    • DEYOUNG, James
    • H01L21/00
    • B05D1/185 , B05D5/005 , B05D2401/90 , B82Y30/00 , B82Y40/00 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/76814 , H01L21/76826
    • A process of repairing a plasma etched low-k dielectric material having surface-bound silanol groups includes exposing at least one surface of the dielectric material to (a) a catalyst so as to form hydrogen bonds between the catalyst and the surface-bound silanol groups obtaining a catalytic intermediary that reacts with the silane capping agent so as to form surface-bound silane compounds, or (b) a solution comprising a supercritical solvent, a catalyst, and a silane capping agent so as to form hydrogen bonds between a catalyst and the surface-bound silanol groups obtaining a catalytic intermediary that reacts with the silane capping agent so as to form surface-bound silane compounds. Horizontal networks can be formed between adjacent surface-bound silane compounds. The dielectric material can be further treated with an organic acid so as to catalyze a hydrolytic reaction with alkoxy groups on the surface-bound silane compounds forming silanol groups that can be condensed via heat to remove water as a byproduct.
    • 修复具有表面结合硅烷醇基团的等离子体蚀刻的低k电介质材料的方法包括将电介质材料的至少一个表面暴露于（a）催化剂，以便在催化剂和表面结合的硅烷醇基团之间形成氢键 获得与硅烷封端剂反应以形成表面结合的硅烷化合物的催化中间体，或（b）包含超临界溶剂，催化剂和硅烷封端剂的溶液，以在催化剂和 表面结合的硅烷醇基团获得与硅烷封端剂反应以形成表面结合的硅烷化合物的催化中间体。 可以在相邻的表面结合的硅烷化合物之间形成水平网络。 电介质材料可以用有机酸进一步处理，以催化表面结合的硅烷化合物上的烷氧基的水解反应，形成硅烷醇基团，可以通过加热冷凝以除去水作为副产物。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明申请
      WO2009085098A1 VAPOR PHASE REPAIR AND PORE SEALING OF LOW-K DIELECTRIC MATERIALS 审中-公开
    • VAPOR PHASE REPAIR AND PORE SEALING OF LOW-K DIELECTRIC MATERIALS
    • 低K电介质材料的蒸汽相修复和密封
    • WO2009085098A1
    • 2009-07-09
    • PCT/US2008/013471
    • 2008-12-08
    • LAM RESEARCH CORPORATION , DEYOUNG, James
    • DEYOUNG, James
    • H01L21/20 , H01L21/31
    • H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/02343 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76831
    • A method of treating a nanoporous low-k dielectric material formed on a semiconductor substrate is provided. The low-k dielectric material has etched openings with an etch damaged region containing silanol groups on exterior surfaces of the etched openings and on interior surfaces of interconnected pores. First, the low-k dielectric material is contacted with a vapor phase catalyst in an amount effective to form hydrogen bonds between the catalyst and the silanol groups in the etch damaged region, forming a catalytic intermediary. Second, the low-k dielectric material is contacted with a vapor phase alkoxysilane repair agent in an amount effective to react with about 50% or more of the silanol groups in the etch damaged region, such that the alkoxysilane repair agent reacts with the catalytic intermediary; and/or the low-k dielectric material is contacted with a vapor phase alkoxysilane sealing agent in an amount effective to prevent diffusion of an overlying barrier layer into the interconnected pores, such that the alkoxysilane sealing agent reacts with the catalytic intermediary.
    • 提供了一种处理形成在半导体衬底上的纳米多孔低介电材料的方法。 低k电介质材料具有蚀刻开口，蚀刻损伤区域在蚀刻开口的外表面和互连孔的内表面上含有硅烷醇基团。 首先，低k电介质材料与气相催化剂接触，其量可有效地在蚀刻损伤区域内形成催化剂和硅烷醇基团之间的氢键，形成催化中间体。 第二，低k电介质材料与蒸气相烷氧基硅烷修复剂接触，其量有效地与蚀刻损伤区域中的约50％或更多的硅烷醇基反应，使得烷氧基硅烷修复剂与催化中间体 ; 和/或低k电介质材料与气相烷氧基硅烷密封剂接触，其量可有效地防止上覆阻挡层扩散到互连孔中，使得烷氧基硅烷密封剂与催化中间体反应。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 6. 发明申请
      WO2011050171A2 METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
    • METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE
    • 用于修复低K电介质损伤的方法
    • WO2011050171A2
    • 2011-04-28
    • PCT/US2010/053564
    • 2010-10-21
    • LAM RESEARCH CORPORATION , SIRARD, Stephen M. , DEYOUNG, James , TURMEL, Odette
    • SIRARD, Stephen M. , DEYOUNG, James , TURMEL, Odette
    • H01L21/31
    • H01L21/3105 , H01L21/76814 , H01L21/76826
    • A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.
    • 提供了一种用有机化合物对硅基低k电介质层进行损伤的调谐修复方法，其中损伤用连接到硅上的羟基连接到硅上的甲基代替。 提供前体气体，其包含以Si-（R）x（OR'）y表示的第一修复剂，其中y≥1且x + y = 4，并且其中R为烷基或芳基，R'为 烷基或芳基，第二修饰剂以Si-（R）x（OR'）yR“表示，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基 或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 一些第一修复剂和第二修复剂结合到低k电介质以形成第一修复剂和第二修复剂的单层。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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