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1. 发明申请

WO2006125504A1 OLIGOMERIC POLYACENE AND SEMICONDUCTOR FORMULATION 审中-公开
标题翻译：低聚物聚合物和半导体配方
公开(公告)号：WO2006125504A1
公开(公告)日：2006-11-30
申请号：PCT/EP2006/003889
申请日：2006-04-26
申请人： MERCK PATENT GMBH , LEEMING, Stephen, William , ANEMIAN, Remi, Manouk , WILLIAMS, Richard , BROWN, Beverley, Anne
发明人： LEEMING, Stephen, William , ANEMIAN, Remi, Manouk , WILLIAMS, Richard , BROWN, Beverley, Anne
IPC分类号： H01L51/05 , C07C15/20
CPC分类号： H01L51/0094 , C07C15/20 , C07C15/28 , C07C15/38 , H01L51/0035 , H01L51/0055 , H01L51/0058 , H01L51/0512 , Y02E10/549
摘要： The invention relates to novel oligomeric polyacene compounds, organic semiconducting formulations and layers comprising them, a process for preparing the formulation and layer and electronic devices, including organic field effect transistors (OFETs), comprising the same.
摘要翻译：本发明涉及新颖的低聚多并苯化合物，有机半导体配方和包含它们的层，制备制剂的方法和层以及包括有机场效应晶体管（OFET）的电子器件。

2. 发明申请

WO2005055248A2 IMPROVEMENTS IN AND RELATING TO ORGANIC SEMICONDUCTING LAYERS 审中-公开
标题翻译：包含聚丙烯和有机粘合剂聚合物的有机半导体层制剂
公开(公告)号：WO2005055248A2
公开(公告)日：2005-06-16
申请号：PCT/GB2004/004973
申请日：2004-11-25
申请人： AVECIA LIMITED , BROWN, Beverley, Anne , VERES, Janos , ANEMIAN, Remi, Manouk , WILLIAMS, Richard, Thomas , OGIER, Simon, Dominic , LEEMING, Stephen, William
发明人： BROWN, Beverley, Anne , VERES, Janos , ANEMIAN, Remi, Manouk , WILLIAMS, Richard, Thomas , OGIER, Simon, Dominic , LEEMING, Stephen, William
IPC分类号： H01B1/12
CPC分类号： C08L39/04 , C07F7/0809 , C07F7/0818 , C08L35/06 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0566 , H01L51/42 , H01L51/50 , Y02E10/549 , C08L2666/02 , C08L2666/28
摘要： An organic semiconducting layer formulation, which comprises: an organic binder which has a permittivity, ε, at 1,000 Hz of 3.3 or less; and a polyacene compound of Formula: A: wherein: each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 and R 12 , which may be the same or different, independently represents hydrogen; an optionally substituted C 1 -C 40 carbyl or hydrocarbyl group; an optionally substituted C 1 -C 40 alkoxy group; an optionally substituted C 6 -C 40 aryloxy group; an optionally substituted C 7 -C 40 alkylaryloxy group; an optionally substituted C 2 -C 40 alkoxycarbonyl group; an optionally substituted C 7 -C 40 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group (-C(=O)NH 2 ); a haloformyl group (-C(=O)-X, wherein X represents a halogen atom); a formyl group (-C(=O)-H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF 3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and wherein independently each pair of R 2 and R 3 and/or R 8 and R 9 , may be cross-bridged to form a C 4 -C 40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group shown by formula -N(R a )- (wherein R a is a hydrogen atom or an optionally substituted hydrocarbon group), or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituents R 1 -R 12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C 4 -C 40 saturated or unsaturated ring optionally interrupted by O, S or -N(R a ) where R a is as defined above) or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1, 2, 3 or 4, also claimed is an electronic device, particularly an organic field effect transistor comprising the organic semiconductor layer formulation.
摘要翻译：一种有机半导体层制剂，其包含：在1000Hz下介电常数ε为3.3或更小的有机粘合剂; 和式A的多并苯化合物：其中：可以相同或不同的R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8，R 9，R 10，R 11和R 12各自独立地表示氢; 任选取代的C 1 -C 40碳原子或烃基; 任选取代的C 1 -C 40烷氧基; 任选取代的C 6 -C 40芳氧基; 任选取代的C 7 -C 40烷基芳氧基; 任选取代的C 2 -C 40烷氧基羰基; 任选取代的C 7 -C 40芳氧基羰基; 氰基（-CN）; 氨基甲酰基（-C（= O）NH 2）; 卤代甲酰基（-C（= O）-X，其中X表示卤素原子）; 甲酰基（-C（= O）-H）; 异氰基团异氰酸酯基; 硫氰酸酯基或硫代异氰酸酯基; 任选取代的氨基; 羟基; 硝基; CF3组; 卤代基（CI，Br，F）; 或任选取代的甲硅烷基; 并且其中独立地，每对R 2和R 3和/或R 8和R 9可以交桥以形成C 4 -C 40饱和或不饱和环，该饱和或不饱和环可以被氧原子，硫原子或基团-N（R a） - （其中R a是氢原子或任选取代的烃基），或可以任选地被取代; 并且其中多并苯骨架的一个或多个碳原子可任选地被选自N，P，As，O，S，Se和Te的杂原子取代; 并且其中独立地位于多并苯的相邻环位上的任何两个或更多个取代基R 1 -R 12可以一起任选地构成任选地被O，S或-N（R a）中断的另外的C 4 -C 40饱和或不饱和环，其中Ra如上所定义）或与多并烯稠合的芳环体系; 并且其中n为0,1,2,3或4，还要求保护的是电子器件，特别是包含有机半导体层配方的有机场效应晶体管。

3. 发明申请

WO2006010555A1 TRIARYLAMINE COMPOUNDS, COMPOSITIONS AND DEVICES 审中-公开
标题翻译：三胺化合物，组合物和装置
公开(公告)号：WO2006010555A1
公开(公告)日：2006-02-02
申请号：PCT/EP2005/007943
申请日：2005-07-21
申请人： MERCK PATENT GMBH , AVECIA LIMITED , BROWN, Beverley, Anne , LEEMING, Stephan, William , WILLIAMS, Richard
发明人： BROWN, Beverley, Anne , LEEMING, Stephan, William , WILLIAMS, Richard
IPC分类号： C07C211/54
CPC分类号： C07C211/54
摘要： The invention relates to a compound of Formula (I): wherein: each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 and R 7 which may be the same or different on each triarylamine unit of Formula (1) and the same or different from one triarylamine unit of Formula (1) to another is independently hydrogen or an optionally substituted substituent; n is from 5 to 20; and a and b are each independently 0, 1, 2, 3 or 4. Also claimed are compositions comprising a compound of Formula (1) and a synthetic organic polymer resin, a process for preparing a compound of Formula (1), an organic semiconducting layer prepared from the composition, and electronic devices comprising the organic semiconducting layer.
摘要翻译：本发明涉及式（I）的化合物：其中：R 1，

4. 发明申请

WO2006048092A1 PROCESS FOR MAKING AN ORGANIC FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：制造有机场效应晶体管的方法
公开(公告)号：WO2006048092A1
公开(公告)日：2006-05-11
申请号：PCT/EP2005/010661
申请日：2005-10-04
申请人： MERCK PATENT GMBH , BROWN, Beverley, Anne , VERES, Janos , OGIER, Simon, Dominic
发明人： BROWN, Beverley, Anne , VERES, Janos , OGIER, Simon, Dominic
IPC分类号： H01L51/40
CPC分类号： H01L51/002 , H01L51/0055 , H01L51/0094 , H01L51/0516 , H01L51/0541 , Y02E10/549
摘要： The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.
摘要翻译：本发明涉及通过向OSC层施加氧化剂来降低具有半导体沟道区域的电子器件中的半导体（OSC）层的迁移率的方法，该方法在所述沟道区域外的特定区域中。

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