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1. 发明申请

WO2009119995A2 METHOD OF TEXTURING SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：纹理细胞的方法和制造太阳能电池的方法
公开(公告)号：WO2009119995A2
公开(公告)日：2009-10-01
申请号：PCT/KR2009/001433
申请日：2009-03-20
申请人： LG ELECTRONICS INC. , CHEONG, Juhwa , KIM, Sungjin , JEONG, Jiweon , DO, Younggu
发明人： CHEONG, Juhwa , KIM, Sungjin , JEONG, Jiweon , DO, Younggu
IPC分类号： H01L31/04
CPC分类号： H01L31/02363 , Y02E10/50
摘要： Methods of texturing and manufacturing a solar cell are provided. The method of texturing the solar includes texturing a surface of a substrate of the solar cell using a wet etchant, and the wet etchant includes a surfactant.
摘要翻译：提供了制造和制造太阳能电池的方法。太阳能纹理化的方法包括使用湿蚀刻剂对太阳能电池的基板的表面进行纹理化，湿蚀刻剂包括表面活性剂。

2. 发明申请

WO2010024522A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2010024522A1
公开(公告)日：2010-03-04
申请号：PCT/KR2009/003295
申请日：2009-06-19
申请人： LG ELECTRONICS INC. , CHEONG, Juhwa , AHN, Junyong , JEONG, Jiweon , PARK, Hyunjung , LEE, Seongeun
发明人： CHEONG, Juhwa , AHN, Junyong , JEONG, Jiweon , PARK, Hyunjung , LEE, Seongeun
IPC分类号： H01L31/042
CPC分类号： H01L31/02363 , H01L31/02168 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt% to 10 wt% of HF, about 30 wt% to 60 wt% of HNO 3 , and up to about 30 wt% of acetic acid based on total weight of the etchant.
摘要翻译：太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板中形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二电极接触第二类型半导体。在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸的蚀刻剂。

3. 发明申请

WO2010053217A1 SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：硅太阳能电池及其制造方法
公开(公告)号：WO2010053217A1
公开(公告)日：2010-05-14
申请号：PCT/KR2008/006503
申请日：2008-11-05
申请人： LG ELECTRONICS INC.
发明人： AHN, Junyong , KWAG, Gyeayoung , CHEONG, Juhwa
IPC分类号： H01L31/042
CPC分类号： H01L31/0684 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A silicon solar cell and a method of maπufacturirg the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.
摘要翻译：公开了一种硅太阳能电池及其制造方法。硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底，掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层，在衬底的整个表面上的抗反射层，上电极穿过抗反射层并连接到发射极层，下电极连接到衬底的下部。发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。

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