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1. 发明申请

WO2010030123A3 METAL NANO BELT, METHOD OF MANUFACTURING SAME, AND CONDUCTIVE INK COMPOSITION AND CONDUCTIVE FILM INCLUDING THE SAME 审中-公开
标题翻译：金属纳米带，其制造方法以及导电墨组合物和包含该导电膜的导电膜
公开(公告)号：WO2010030123A3
公开(公告)日：2010-06-24
申请号：PCT/KR2009005133
申请日：2009-09-10
申请人： LG CHEMICAL LTD , KWON WON-JONG , KIM JAE-HONG , JIN SUN-MI , LEE SANG-UCK , LIM YOUNG-SOO
发明人： KWON WON-JONG , KIM JAE-HONG , JIN SUN-MI , LEE SANG-UCK , LIM YOUNG-SOO
IPC分类号： B82B3/00
CPC分类号： H01B1/22 , B22F1/0018 , B22F9/24 , B22F2001/0033 , B82Y10/00 , B82Y30/00 , C09D11/52 , H01B1/24 , H01L31/022433 , H05K1/092 , H05K1/097 , H05K2201/026 , Y02E10/50 , Y10S977/762 , Y10S977/81 , Y10S977/895 , Y10S977/90 , Y10T428/12229
摘要： The present invention relates to a metal nano belt and a method of manufacturing same, and a conductive ink composition and conductive film including same. Said metal nano belt can be easily manufactured at a normal temperature and pressure without requiring the application of high temperature and pressure, and also can be used to form a conductive film or conductive pattern that exhibits excellent conductivity if a conductive ink composition including the same is printed onto a substrate before a heat treatment or drying process is carried out at low temperature. Therefore, said metal nano belt and conductive ink composition may be applied very appropriately to the formation of various semiconductor devices, displays, conductive patterns or conductive films for solar cells in environments requiring low temperature plasticity. Said metal nano belt has a length of 500 nm or more, a length/width ratio of 10 or more, and a width/thickness ratio of 3 or more.
摘要翻译：金属纳米带及其制造方法，以及包含其的导电墨水组合物和导电膜技术领域本发明涉及金属纳米带及其制造方法，所述金属纳米带可以在常温常压下容易地制造而不需要施加高温和高压，并且如果包含所述金属纳米带的导电油墨组合物是导电油墨组合物，则可以用于形成导电性优异的导电膜或导电图案在热处理或干燥过程在低温下进行之前印刷到基材上。因此，所述金属纳米带和导电油墨组合物可以非常适用于在需要低温塑性的环境中形成各种半导体器件，显示器，用于太阳能电池的导电图案或导电膜。所述金属纳米带的长度为500nm以上，长宽比为10以上，宽度/厚度比为3以上。

2. 发明申请

WO2011112020A2 BELT-SHAPED METAL NANOSTRUCTURE AND METHOD FOR PREPARING SAME 审中-公开
标题翻译：带形金属纳米结构及其制备方法
公开(公告)号：WO2011112020A2
公开(公告)日：2011-09-15
申请号：PCT/KR2011001677
申请日：2011-03-10
申请人： LG CHEMICAL LTD , KWON WON-JONG , HWANG GYO-HYUN , LEE SANG-UCK , KIM HYUK , PARK JUNG-WON , YOON SUNG-HO , LEE KYUNG-HOON
发明人： KWON WON-JONG , HWANG GYO-HYUN , LEE SANG-UCK , KIM HYUK , PARK JUNG-WON , YOON SUNG-HO , LEE KYUNG-HOON
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B22F1/0018 , B22F1/0025 , B82Y30/00
摘要： The present invention relates to a belt-shaped metal nanostructure in which a wide surface area of catalyst-activating material can be produced with a relatively smaller amount of catalyst-activating material, to thereby achieve superior catalyst activation. The present invention also relates to a method for preparing the metal nanostructure. The belt-shaped metal nanostructure comprises a metal nanobelt having a nanoscale thickness, a width larger than the thickness, and a length that is larger than the width, and containing a first metal and conductive polymers; and a second metal coupled to one or both planes of the metal nanobelt defined by said width and length.
摘要翻译：本发明涉及一种带状金属纳米结构，其中可以用相对较少量的催化剂活化材料制备催化剂活化材料的宽表面积，从而实现优异的催化剂活化。本发明还涉及制备金属纳米结构的方法。带状金属纳米结构包括具有纳米级厚度，宽度大于厚度的金属纳米带和大于宽度的长度，并且包含第一金属和导电聚合物; 以及耦合到由所述宽度和长度限定的金属纳米带的一个或两个平面的第二金属。

3. 发明申请

WO2011112020A3 BELT-SHAPED METAL NANOSTRUCTURE AND METHOD FOR PREPARING SAME 审中-公开
标题翻译：带状金属纳米结构体及其制备方法
公开(公告)号：WO2011112020A3
公开(公告)日：2012-03-01
申请号：PCT/KR2011001677
申请日：2011-03-10
申请人： LG CHEMICAL LTD , KWON WON-JONG , HWANG GYO-HYUN , LEE SANG-UCK , KIM HYUK , PARK JUNG-WON , YOON SUNG-HO , LEE KYUNG-HOON
发明人： KWON WON-JONG , HWANG GYO-HYUN , LEE SANG-UCK , KIM HYUK , PARK JUNG-WON , YOON SUNG-HO , LEE KYUNG-HOON
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B22F1/0018 , B22F1/0025 , B82Y30/00
摘要： The present invention relates to a belt-shaped metal nanostructure in which a wide surface area of catalyst-activating material can be produced with a relatively smaller amount of catalyst-activating material, to thereby achieve superior catalyst activation. The present invention also relates to a method for preparing the metal nanostructure. The belt-shaped metal nanostructure comprises a metal nanobelt having a nanoscale thickness, a width larger than the thickness, and a length that is larger than the width, and containing a first metal and conductive polymers; and a second metal coupled to one or both planes of the metal nanobelt defined by said width and length.
摘要翻译：本发明涉及一种带状金属纳米结构体，其中可以用相对较少量的催化剂活化材料制备催化剂活化材料的宽表面积，从而实现优异的催化剂活化。本发明还涉及制备金属纳米结构的方法。所述带状金属纳米结构包括具有纳米级厚度，大于所述厚度的宽度以及大于所述宽度的长度并且包含第一金属和导电聚合物的金属纳米带; 以及耦合到由所述宽度和长度限定的金属纳米带的一个或两个平面的第二金属。

4. 发明申请

WO2011112021A3 METHOD FOR MANUFACTURING METAL NANOBELT 审中-公开
标题翻译：制造金属纳米粒子的方法
公开(公告)号：WO2011112021A3
公开(公告)日：2012-02-23
申请号：PCT/KR2011001678
申请日：2011-03-10
申请人： LG CHEMICAL LTD , KWON WON-JONG , YOON SUNG-HO , LEE KYUNG-HOON
发明人： KWON WON-JONG , YOON SUNG-HO , LEE KYUNG-HOON
IPC分类号： B82B3/00
CPC分类号： B22F1/0062 , B22F1/0025 , B22F7/04 , B22F9/20 , C09D11/52 , Y10S977/89
摘要： The present invention relates to a method for manufacturing a metal nanobelt. According to the method of the present invention, a metal nanobelt having a variety of applications can be easily manufactured at room temperature and ambient pressure through a simple process, which enables a conductive film or a conductive pattern having superior conductivity to be formed in an easier manner. The method for manufacturing a metal nanobelt comprises a step of allowing conductive polymers and metal salts to react with each other.
摘要翻译：本发明涉及一种制造金属纳米带的方法。根据本发明的方法，具有各种应用的金属纳米带可以通过简单的工艺在室温和环境压力下容易地制造，这使得能够更容易地形成具有优异导电性的导电膜或导电图案方式。用于制造金属纳米带的方法包括允许导电聚合物和金属盐彼此反应的步骤。

5. 发明申请

WO2010024641A3 NEW THERMOELECTRIC MATERIAL, METHOD OF MANUFACTURE THEREOF AND THERMOELECTRIC COMPONENT USING THE SAME 审中-公开
标题翻译：新型热电材料及其制造方法和使用该热电材料的热电组件
公开(公告)号：WO2010024641A3
公开(公告)日：2010-07-01
申请号：PCT/KR2009004883
申请日：2009-08-31
申请人： LG CHEMICAL LTD , PARK CHEOL-HEE , SOHN SE-HUI , KWON WON-JONG , HONG SEUNG-TAE , KIM TAE-HOON
发明人： PARK CHEOL-HEE , SOHN SE-HUI , KWON WON-JONG , HONG SEUNG-TAE , KIM TAE-HOON
IPC分类号： H01L35/16 , C01B19/00 , C01G3/00 , C01G29/00 , H01L35/18
CPC分类号： H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50
摘要： The present invention provides a new thermoelectric material expressed by the following chemical formula: Bi1-xCu1-yO1-zTe. In the above chemical formula 1: 0=x
摘要翻译：本发明提供由以下化学式表示的新型热电材料：Bi1-xCu1-yO1-zTe。在上述化学式1中：0 = x <1,0,0 = y <1,0,0 = z0。使用该热电材料的热电装置表现出优异的能量转换效率。

6. 发明申请

WO2011112021A9 METHOD FOR MANUFACTURING METAL NANOBELT 审中-公开
标题翻译：制造金属纳米微粒的方法
公开(公告)号：WO2011112021A9
公开(公告)日：2012-01-12
申请号：PCT/KR2011001678
申请日：2011-03-10
申请人： LG CHEMICAL LTD , KWON WON-JONG , YOON SUNG-HO , LEE KYUNG-HOON
发明人： KWON WON-JONG , YOON SUNG-HO , LEE KYUNG-HOON
IPC分类号： B82B3/00
CPC分类号： B22F1/0062 , B22F1/0025 , B22F7/04 , B22F9/20 , C09D11/52 , Y10S977/89
摘要： The present invention relates to a method for manufacturing a metal nanobelt. According to the method of the present invention, a metal nanobelt having a variety of applications can be easily manufactured at room temperature and ambient pressure through a simple process, which enables a conductive film or a conductive pattern having superior conductivity to be formed in an easier manner. The method for manufacturing a metal nanobelt comprises a step of allowing conductive polymers and metal salts to react with each other.
摘要翻译：本发明涉及金属纳米带的制造方法。根据本发明的方法，可以通过简单的工艺在室温和环境压力下容易地制造具有各种应用的金属纳米带，这使得能够更容易地形成具有优良导电性的导电膜或导电图案方式。制造金属纳米带的方法包括使导电聚合物和金属盐彼此反应的步骤。

7. 发明申请

WO2010024637A3 NEW SEMICONDUCTIVE COMPOUND, METHOD OF MANUFACTURE THEREOF, AND THERMOELECTRIC COMPONENT USING THE SAME 审中-公开
标题翻译：新的半导体化合物，其制造方法和使用其的热电组分
公开(公告)号：WO2010024637A3
公开(公告)日：2010-07-01
申请号：PCT/KR2009004872
申请日：2009-08-31
申请人： LG CHEMICAL LTD , PARK CHEOL-HEE , SOHN SE-HUI , KWON WON-JONG , KIM TAE-HOON , HONG SEUNG-TAE
发明人： PARK CHEOL-HEE , SOHN SE-HUI , KWON WON-JONG , KIM TAE-HOON , HONG SEUNG-TAE
IPC分类号： C01G29/00 , C01B19/00 , H01B1/02 , H01L35/16 , H01L35/18
CPC分类号： H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50
摘要： The present invention provides a new semiconductive compound expressed by the following chemical formula: Bi1-x-yLnxMyCuOTe. In the above chemical formula, Ln is either one or two elements of the lanthanum family selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; M is either one or two elements selected from Ba, Sr, Ca, Mg, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb. In addition, 0
摘要翻译：本发明提供由以下化学式表示的新的半导体化合物：Bi1-x-yLnxMyCuOTe。在上述化学式中，Ln是选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu中的一种或两种镧族元素; M是选自Ba，Sr，Ca，Mg，Cd，Hg，Sn，Pb，Mn，Ga，In，Tl，As和Sb中的一种或两种元素。另外，0

8. 发明申请

WO2011132992A3 PRIVACY PROTECTION FILTER AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：隐私保护过滤器及其制造方法
公开(公告)号：WO2011132992A3
公开(公告)日：2012-03-08
申请号：PCT/KR2011002954
申请日：2011-04-22
申请人： LG CHEMICAL LTD , KIM JAE-JIN , SHIN BU-GON , KWON WON-JONG
发明人： KIM JAE-JIN , SHIN BU-GON , KWON WON-JONG
IPC分类号： G02B26/00 , G02B5/20 , G02F1/163
CPC分类号： G02F1/1323 , G02F1/1533 , G02F2001/1536 , G02F2201/44
摘要： The present invention relates to a privacy protection filter and a fabrication method thereof, and more specifically, to a privacy protection filter and a fabrication method thereof, the privacy protection filter comprising: a first transparent substrate; a second transparent substrate which is disposed to face the first transparent substrate at certain intervals; an electrolyte which is charged between the first transparent substrate and the second transparent substrate; and a second transparent conductive film which is positioned between the electrolyte and the second transparent substrate, wherein said first transparent substrate comprises: a concavo-convex pattern which has a trench and a wire grid formed on said first transparent substrate; a first transparent conductive film which is formed on the trench and the wire grid of the concavo-convex pattern; and an electrochromic layer which is formed on the first transparent conductive film along the surface of a wall of the wire grid, and contains an electrochromic material for transmitting or absorbing visible rays depending on whether electricity is applied. The privacy protection filter of the present invention can: effectively block the lateral transmittance of light without reducing the front transmittance of light; implement a fast switch between a wide-viewing angle mode and a narrow-viewing angle mode; and obtain the superior performance and driving stability of the filter.
摘要翻译：隐私保护滤波器及其制造方法技术领域本发明涉及隐私保护滤波器及其制造方法，更具体地，涉及一种隐私保护滤波器及其制造方法，所述隐私保护滤波器包括：第一透明基板; 第二透明基板，其以一定间隔设置为面对所述第一透明基板; 电解质，其被填充在所述第一透明基板和所述第二透明基板之间; 以及第二透明导电膜，其位于所述电解质和所述第二透明基板之间，其中所述第一透明基板包括：凹凸图案，其具有形成在所述第一透明基板上的沟槽和线栅; 形成在沟槽和凹凸图案的线栅上的第一透明导电膜; 以及沿着线栅的壁的表面形成在第一透明导电膜上的电致变色层，并且包含用于根据是否施加电力来透射或吸收可见光的电致变色材料。本发明的隐私保护滤波器可以：有效地阻止光的横向透射而不减少光的正面透射率; 在宽视角模式和窄视角模式之间实现快速切换; 并获得了优越的性能和过滤器的驱动稳定性。

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