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1. 发明申请

WO2010019616A2 HIGH GRADIENT MULTILAYER VACUUM INSULATOR 审中-公开
标题翻译：高级多层真空绝缘子
公开(公告)号：WO2010019616A2
公开(公告)日：2010-02-18
申请号：PCT/US2009/053470
申请日：2009-08-11
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： HARRIS, John Richardson , SANDERS, David M. , HAWKINS, Steven A. , FALABELLA, Steven
IPC分类号： H05H7/22
CPC分类号： H05H7/22
摘要： A high gradient multilayer vacuum insulator (HGI) with increased resistance to vacuum arcing to improve electrical strength. In an exemplary embodiment, the HGI includes a plurality of conductive and dielectric layers stacked in alternating arrangement so that the edges of the layers together form a vacuum-insulator interface and the stack has an overall length L s . The dielectric layers each have a thickness I that is less than (see formulae) where I t It is the transitional dielectric layer thickness below which failure of the vacuum insulator is by vacuum arcing, E BD is the breakdown field required to initiate vacuum arcing across one of said dielectric layers, and E M is the breakdown field required to initiate surface flashover across a monolithic dielectric material of length L s .
摘要翻译：高梯度多层真空绝缘子（HGI）具有提高的抗真空电弧强度以提高电气强度。在示例性实施例中，HGI包括以交替布置堆叠的多个导电和电介质层，使得这些层的边缘一起形成真空 - 绝缘体界面，并且堆叠具有总长度Ls。电介质层各自具有小于（参见公式）的厚度I其中I t是过渡介电层厚度，低于绝缘体的真空电弧故障时，EBD是通过一个引发真空电弧所需的击穿场的电介质层，EM是在长度为Ls的整体电介质材料上引发表面闪络所需的击穿场。

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