专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2003100817A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MUTLI-PART ELECTRODE 审中-公开
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换MUTLI部分电极的部分的方法
公开(公告)号：WO2003100817A1
公开(公告)日：2003-12-04
申请号：PCT/US2003/016318
申请日：2003-05-23
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
发明人： FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
IPC分类号： H01J37/32
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion (110) of the electrode having high wear is replaceable independent of an outer peripheral portion (114) of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processsing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分（110）可以替代而不依赖于电极的外周部分（114）。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如单片电极不可用或昂贵的300mm晶片处理室。

2. 发明申请

WO2006101889A3 PLASMA CONFINEMENT RING ASSEMBLIES HAVING REDUCED POLYMER DEPOSITION CHARACTERISTICS 审中-公开
公开(公告)号：WO2006101889A3
公开(公告)日：2006-09-28
申请号：PCT/US2006/009300
申请日：2006-03-15
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , KOZAKEVICH, Felix , ROGERS, James, H. , TRUSSELL, David
发明人： DHINDSA, Rajinder , KOZAKEVICH, Felix , ROGERS, James, H. , TRUSSELL, David
IPC分类号： C23C16/00
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

3. 发明申请

WO2018089196A1 ACTIVE SHOWERHEAD 审中-公开
标题翻译：活动花洒
公开(公告)号：WO2018089196A1
公开(公告)日：2018-05-17
申请号：PCT/US2017/058313
申请日：2017-10-25
申请人： LAM RESEARCH CORPORATION
发明人： GREGOR, Mariusch , LILL, Thorsten , TRUSSELL, David
IPC分类号： H01L21/67 , H01J37/32 , H05H1/46 , H01L21/3065 , H01L21/02
摘要： An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.
摘要翻译：描述了用于等离子体反应器的主动喷头。有源喷头包括多个基底层。衬底层包括至少一个致动器和传送部件。致动器和传送部件通过气体通道连接到气体管线。有源喷头还包括位于基底层下方的电极层。电极层和致动器和传送部件都共享一个开口。致动器和传送部件允许从气体管线和气体通道接收的一种或多种工艺气体进入开口，而不需要传统的气体箱。

4. 发明申请

WO1998001601A1 PLASMA CHAMBER WITH SEPARATE PROCESS GAS AND CLEANING GAS INJECTION PORTS 审中-公开
标题翻译：具有独立工艺气体和清洁气体注入口的等离子体室
公开(公告)号：WO1998001601A1
公开(公告)日：1998-01-15
申请号：PCT/US1997011686
申请日：1997-07-09
申请人： LAM RESEARCH CORPORATION
发明人： LAM RESEARCH CORPORATION , TRUSSELL, David , KOEMTZOPOULOS, C., Robert , KOZAKEVICH, Felix
IPC分类号： C23C16/44
CPC分类号： C23C16/45563 , C23C16/4405 , H01J37/32192 , H01J37/32862
摘要： A method and arrangement for the in situ cleaning of a chamber in which process gas in injected into the chamber through gas injecton ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber (30), through a first gas injection port (62) while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port (60) that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.
摘要翻译：一种用于原位清洗室的方法和装置，其中通过气体注入口将注入到室中的工艺气体。提供了将过程气体和清洁气体注入室中的独立气体注入口。将处理气体通过第一气体注入口（62）注入到诸如等离子体室（30）的腔室中，同时清洗在沉积过程中由工艺气体留下的残余物的清洁气体被注入到通过与注入工艺气体的第一气体注入口分离的第二气体注入口（60）。气体喷射端口的分离为处理气体和室内部的喷射螺杆端口提供均衡的压力。这允许喷射螺杆端口被最大限度地清洁并且降低了腔室中的喷射螺杆端口的更换频率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式