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    • 1. 发明申请
    • WAFER HEATING AND TEMPERATURE CONTROL BY BACKSIDE FLUID INJECTION
    • 背面流体注射的加热和温度控制
    • WO2006065532A3
    • 2007-04-19
    • PCT/US2005043256
    • 2005-11-29
    • LAM RES CORPMOORING BENPARKS JOHNHYMES DIANE J
    • MOORING BENPARKS JOHNHYMES DIANE J
    • C23C16/00C23F1/00
    • H01L21/67109
    • In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.
    • 在许多实施例中的一个实施例中,提供了一种用于处理衬底的装置,其包括衬底处理室,其中衬底位于衬底处理室内,使得衬底至少部分地将衬底处理室分离成第一腔室和第二腔室 。 该装置还包括第一室入口,其构造成在第一压力下将第一温度的第一流体输入到第一室中,并且第二室入口构造成在第二压力下将第二温度的第二流体输入到第二室中, 第一压力和第二压力基本相等。 第二个温度可以用来管理衬底温度。
    • 3. 发明申请
    • OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES
    • 用于定位基板的偏移校正技术
    • WO2008042580A2
    • 2008-04-10
    • PCT/US2007078576
    • 2007-09-14
    • LAM RES CORPCHEN JACKBAILEY ANDREW D IIIMOORING BENCAIN STEPHEN J
    • CHEN JACKBAILEY ANDREW D IIIMOORING BENCAIN STEPHEN J
    • H01L21/66G06F19/00
    • G05B19/41875G05B2219/37398G05B2219/45031G05B2219/50057Y02P90/22
    • A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.
    • 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点,其通过以一组取向和距离基板的几何中心的一组距离测量薄膜基板的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括产生该组取向的蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图,其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。
    • 4. 发明申请
    • OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES WITHIN A PROCESSING CHAMBER
    • 用于在加工室中定位基板的偏移校正技术
    • WO2009043018A3
    • 2009-09-11
    • PCT/US2008078145
    • 2008-09-29
    • LAM RES CORPCHEN JACKBAILEY III ANDREW DMOORING BENCAIN STEPHEN J
    • CHEN JACKBAILEY III ANDREW DMOORING BENCAIN STEPHEN J
    • H01L21/68H01L21/3065H01L21/677H01L21/683H01L21/687
    • H01L21/681H01L21/68
    • A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.
    • 提供了一种将基板对准支撑机构的处理中心的方法。 该方法包括在基板处理之后确定基板厚度,该基板在多个取向并且距离基板的几何中心的多个径向距离处。 该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。 该方法还包括为处理速率创建偏心图,其表示基本上同心的圆,其点是具有基本上第一处理速率的偏心图的圆周。 该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。 该方法还包括向一组机器人手臂提供该组参数,从而使得该组机器人臂将由支撑机构支撑的另一基板与处理中心对准。