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1. 发明申请

WO2010103416A3 METHOD OF PARTICLE CONTAMINANT REMOVAL 审中-公开
标题翻译：颗粒污染物去除方法
公开(公告)号：WO2010103416A3
公开(公告)日：2010-12-09
申请号：PCT/IB2010050842
申请日：2010-02-26
申请人： LAM RES CORP , LAM RES AG , SABBA YIZHAK , YUN SEOKMIN , KAWAGUCHI MARK , WILCOXSON MARK , PODLESNIK DRAGAN
发明人： SABBA YIZHAK , YUN SEOKMIN , KAWAGUCHI MARK , WILCOXSON MARK , PODLESNIK DRAGAN
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： H01L21/02057 , H01L21/67051
摘要： Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.
摘要翻译：从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。外力施加到涂覆有粘弹性材料的表面的第一区域，使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。施加力比粘弹性材料的固有时间短的持续时间，以获得粘弹性材料的固体特性。具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除，而粘弹性材料呈现出固体状特征。

2. 发明申请

WO2006088713A2 ENHANCED WAFER CLEANING METHOD 审中-公开
标题翻译：增强清洗方法
公开(公告)号：WO2006088713A2
公开(公告)日：2006-08-24
申请号：PCT/US2006004504
申请日：2006-02-08
申请人： LAM RES CORP , YUN SEOKMIN , BOYD JOHN M , WILCOXSON MARK , DE LARIOS JOHN
发明人： YUN SEOKMIN , BOYD JOHN M , WILCOXSON MARK , DE LARIOS JOHN
IPC分类号： C23G1/00 , B08B3/00 , B08B3/10 , B08B3/12 , H01L21/00
CPC分类号： H01L21/67028 , C23G1/00 , H01L21/67034 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
摘要翻译：提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。该方法通过向设置在基板上的接近头部提供第一加热流体而开始。然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。基板在邻近头部下线性移动。还提供单个晶片清洁系统。

3. 发明申请

WO2012056343A3 METHOD AND APPARATUS FOR DRYING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于干燥半导体波长的方法和装置
公开(公告)号：WO2012056343A3
公开(公告)日：2012-07-05
申请号：PCT/IB2011054386
申请日：2011-10-05
申请人： LAM RES AG , LAM RES CORP , YUN SEOKMIN , KWON HANCHEOL , WULZ GERHARD , KOVACS FREDERIC
发明人： YUN SEOKMIN , KWON HANCHEOL , WULZ GERHARD , KOVACS FREDERIC
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/67034
摘要： A method and apparatus for drying semiconductor wafers uses hot isopropyl alcohol in liquid form at temperatures above 60°C and below 82°C. The use of hot IPA better avoids pattern collapse and permits reduced consumption of IPA. The wafer temperature can be maintained by applying hot deionized water to the opposite wafer sideand by evaporating the hot IPA from the wafer surface using heated nitrogen gas.
摘要翻译：用于干燥半导体晶片的方法和设备在高于60℃和低于82℃的温度下使用液体形式的热异丙醇。使用热IPA更好地避免了模式崩溃，并允许减少IPA的消耗。可以通过将热去离子水施加到相对的晶片侧并通过使用加热的氮气从晶片表面蒸发热的IPA来保持晶片温度。

4. 发明申请

WO2009008958A3 METHOD OF POST ETCH POLYMER RESIDUE REMOVAL 审中-公开
标题翻译：去除聚合物残留物去除方法
公开(公告)号：WO2009008958A3
公开(公告)日：2009-04-16
申请号：PCT/US2008007759
申请日：2008-06-20
申请人： LAM RES CORP , YUN SEOKMIN , WILCOXSON MARK , ZHU JI , CHUANG KEVIN , CHANG HSIAO WEI , LOU DAVID
发明人： YUN SEOKMIN , WILCOXSON MARK , ZHU JI , CHUANG KEVIN , CHANG HSIAO WEI , LOU DAVID
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译：用于从衬底表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底表面去除蚀刻后聚合物残余物的干闪光化学物质。干闪化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。然后将湿清洗化学品施加到基底的表面。湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。

5. 发明申请

WO2009151656A3 METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
标题翻译：电介质膜处理方法
公开(公告)号：WO2009151656A3
公开(公告)日：2010-03-04
申请号：PCT/US2009035030
申请日：2009-02-24
申请人： LAM RES CORP , YUN SEOKMIN , ZHU JI , DELARIOS JOHN M , WILCOXSON MARK
发明人： YUN SEOKMIN , ZHU JI , DELARIOS JOHN M , WILCOXSON MARK
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

6. 发明申请

WO2008002669A3 POST ETCH WAFER SURFACE CLEANING WITH LIQUID MENISCUS 审中-公开
标题翻译：用液体半月板清洁后进行晶片表面清洗
公开(公告)号：WO2008002669A3
公开(公告)日：2008-05-02
申请号：PCT/US2007015249
申请日：2007-06-28
申请人： LAM RES CORP , ZHU JI , YUN SEOKMIN , WILCOXSON MARK , DE LARIOS JOHN M
发明人： ZHU JI , YUN SEOKMIN , WILCOXSON MARK , DE LARIOS JOHN M
IPC分类号： H01L21/00 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片的表面的方法。将第一种清洁溶液施加到晶片表面以去除晶片表面上的污染物。第一个清洁溶液会被晶圆表面的一些污染物清除。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。去除氧化剂溶液，然后将第二清洁溶液施加到晶片表面。第二清洁溶液从晶片表面移除。清洁溶液被配置为基本上除去氧化层以及剩余的污染物。

7. 发明申请

WO2011094132A2 METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 审中-公开
标题翻译：降低高比例纳米结构中图案褶皱的方法
公开(公告)号：WO2011094132A2
公开(公告)日：2011-08-04
申请号：PCT/US2011022075
申请日：2011-01-21
申请人： LAM RES CORP , YASSERI AMIR A , ZHU JI , YUN SEOKMIN , MUI DAVID S L , MIKHAYLICHENKO KATRINA
发明人： YASSERI AMIR A , ZHU JI , YUN SEOKMIN , MUI DAVID S L , MIKHAYLICHENKO KATRINA
IPC分类号： H01L21/302
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在制造半导体器件的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，以防止它们在随后的湿清洁过程中被损坏。然后可以进一步处理晶片，例如湿法清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

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