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1. 发明申请

WO2004042831A2 RADIATION-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：辐射发射半导体器件及其制造方法
公开(公告)号：WO2004042831A2
公开(公告)日：2004-05-21
申请号：PCT/IB2003/004881
申请日：2003-10-31
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WOERLEE, Pierre, H. , 'T HOOFT, Gert, W. , HOLLEMAN, Jisk
发明人： WOERLEE, Pierre, H. , 'T HOOFT, Gert, W. , HOLLEMAN, Jisk
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/15
摘要： Radiation-emitting semiconductor device and method of manufacturing such a device. The invention relates to a radiation-emitting semiconductor device (10) comprising a silicon-containing semiconductor body (1) and a substrate (2), which semiconductor body (1) comprises a lateral semiconductor diode positioned on an insulating layer (7) which separates the diode from the substrate (2). The lateral semiconductor diode comprises a first semiconductor region (3) of a first conductivity type and with a first doping concentration, a second semiconductor region (4) of the first or a second conductivity type opposite to the first conductivity type and with a second doping concentration which is lower than the first doping concentration, and a third semiconductor region (5) of the second conductivity type and with a third doping concentration which is higher than the second doping concentration, the first and the third region (3, 5) each being provided with a connection region (6, 8), and, during operation, radiation (S) being generated in the second region (4) due to recombination of charge carriers injected therein from the first and the third region (3, 5). According to the invention, the second semiconductor region (4) comprises a central part (4A) which is surrounded by a further part (4B) the bandgap of which is larger than the bandgap of the central part (4A). In this way, the radiation yield is increased in an indirect semiconductor material such as silicon in the central part (4A) as translation of the relatively long-living charge carriers towards a non-radiative recombination center is limited because of the barriers in the valence and conduction band in the further part (4B). Preferably, the bandgap in the further part (4B) is made larger in that the thickness of said part (4B) is so small that quantum size effects occur therein, while the central part (4A) has a thickness which is so large that such effects do not occur or substantially do not occur.
摘要翻译：辐射发射半导体器件及其制造方法。本发明涉及一种包括含硅半导体主体（1）和基板（2）的辐射发射半导体器件（10），该半导体本体（1）包括位于绝缘层（7）上的横向半导体二极管将二极管与衬底（2）分开。横向半导体二极管包括第一导电类型和第一掺杂浓度的第一半导体区域（3），与第一导电类型相反的第一或第二导电类型的第二半导体区域（4）和第二掺杂浓度低于第一掺杂浓度的浓度，以及第二导电类型的第三半导体区域（5）和高于第二掺杂浓度的第三掺杂浓度，第一和第三区域（3,5）各自设置有连接区域（6,8），并且在操作期间，由于从第一和第三区域（3,5）注入的电荷载流子的复合，在第二区域（4）中产生辐射（S）。根据本发明，第二半导体区域（4）包括由带隙大于中心部分（4A）的带隙的另一部分（4B）包围的中心部分（4A）。以这种方式，中间部分（4A）中的间接半导体材料（例如硅）的辐射产量增加，因为相对较长寿命的电荷载流子朝向非辐射复合中心的平移由于价态的障碍而受到限制和另一部分（4B）中的导带。优选地，使另一部分（4B）中的带隙变得更大，因为所述部分（4B）的厚度如此小以致其中出现量子尺寸效应，而中心部分（4A）具有如此大的厚度效果不会发生或基本不发生。

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