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1. 发明申请

WO03023847A3 INTEGRATED CIRCUIT, PORTABLE DEVICE AND METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：集成电路，便携式设备及制造集成电路的方法
公开(公告)号：WO03023847A3
公开(公告)日：2003-10-02
申请号：PCT/IB0203628
申请日：2002-09-03
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： REINER JOACHIM C , GRADENWITZ PAUL G M
IPC分类号： H01L21/768 , H01L23/485 , H01L27/11 , H01L23/522
CPC分类号： H01L27/1112 , H01L21/76895 , H01L23/485 , H01L27/1108 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to an integrated circuit, comprising: - a substrate with a first (semi-)conductive region arranged in or on the substrate; - a second (semi-)conductive region which is isolated for at least a considerable part relative to the first region and is arranged above or adjacent to the first region; - a third (semi-)conductive region which is insulated for at least a considerable part relative to the first and second (semi-)conductive regions and is arranged thereabove; - a fourth (semi-)conductive region which is insulated relative to the first, second and third (semi-)conductive regions and is arranged thereabove; and - a (semi-)conductive interconnection contact (17) which mutually connects said four (semi-)conductive regions (semi-)conductively, wherein at least two of the four (semi-)conductive regions extend substantially parallel to the substrate of the integrated circuit at a considerable lateral angle relative to each other.
摘要翻译：集成电路技术领域本发明涉及一种集成电路，包括： - 衬底，其具有布置在衬底中或衬底上的第一（半）导电区域; - 第二（半）导电区域，其相对于第一区域至少相当部分被隔离并且布置在第一区域的上方或附近; - 第三（半）导电区域，其相对于第一和第二（半）导电区域绝缘至少相当大的一部分，并且布置在其上方; - 第四（半）导电区域，其相对于第一，第二和第三（半）导电区域绝缘并且布置在其上方; 和（ - ）半导体区域（半导体）相互连接的（半）导电互连触点（17），其中所述四个（半）导电区域中的至少两个基本上平行于该集成电路相对于彼此具有相当大的横向角度。

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