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1. 发明申请

WO2011028748A3 METHOD AND APPARATUS FOR PRODUCING AND MEASURING DYNAMICALLY FOCUSSED, STEERED AND SHAPED OBLIQUE LASER ILLUMINATION FOR SPINNING WAFER INSPECTION SYSTEM 审中-公开
标题翻译：用于生产和测量用于纺纱晶圆检测系统的动态聚焦，转向和成形斜向激光照明的方法和设备
公开(公告)号：WO2011028748A3
公开(公告)日：2011-08-04
申请号：PCT/US2010047442
申请日：2010-09-01
申请人： KLA TENCOR CORP , PETRENKO ALEKSEY , WOLTERS CHRISTIAN , CAI ZHONGPING , ROMANOVSKY ANATOLY , WHITESIDE BRET
发明人： PETRENKO ALEKSEY , WOLTERS CHRISTIAN , CAI ZHONGPING , ROMANOVSKY ANATOLY , WHITESIDE BRET
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/8806 , G01N2201/06113 , G01N2201/0633 , G02B27/0972
摘要： A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface. Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.
摘要翻译：一种用于为旋转晶片检测系统产生高频动态聚焦倾斜激光照明的方法和设备。通过改变光束方向入射角来改变焦点，从而将焦斑带到晶片表面上。本文公开了用于旋转晶片检查系统的自动光束整形（即，光斑尺寸）和转向（即，位置）的系统和方法，其被组合成单个模块。还公开了一种用于以足够的分辨率测量光束位置/大小/形状和角度以使用来自监视器的反馈进行校正的方法和系统。

2. 发明申请

WO2012122283A3 SURFACE SCANNING INSPECTION SYSTEM WITH INDEPENDENTLY ADJUSTABLE SCAN PITCH 审中-公开
标题翻译：具有独立可调节扫描间距的表面扫描检测系统
公开(公告)号：WO2012122283A3
公开(公告)日：2012-12-27
申请号：PCT/US2012028092
申请日：2012-03-07
申请人： KLA TENCOR CORP , WOLTERS CHRISTIAN , REICH JUERGEN
发明人： WOLTERS CHRISTIAN , REICH JUERGEN
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/956 , G01N2201/06113 , G01N2201/103
摘要： A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.
摘要翻译：介绍了一种具有独立可调节扫描间距的表面扫描晶片检测系统及相关操作方法。扫描间距可以独立于晶片表面上的照射区域进行调整。在一些实施例中，在照明区域保持恒定的同时调整扫描间距。例如，通过调整晶片相对于晶片的旋转速率的平移速率而无需额外的光学调整来调整缺陷灵敏度。在一些示例中，调整扫描间距以在整个晶片上实现期望的缺陷灵敏度。在其他示例中，在晶片检查期间调整扫描间距以优化缺陷灵敏度和产量。在其他示例中，调整扫描间距以使得在检查下的晶片的损伤限度内的缺陷灵敏度最大化。

3. 发明申请

WO2007087101A2 SYSTEMS AND METHODS FOR INSPECTING A WAFER WITH INCREASED SENSITIVITY 审中-公开
标题翻译：用于检测具有增强灵敏度的波形的系统和方法
公开(公告)号：WO2007087101A2
公开(公告)日：2007-08-02
申请号：PCT/US2006062097
申请日：2006-12-14
申请人： KLA TENCOR TECH CORP , SHORTT DAVID , HALLER KURT L , WOLTERS CHRISTIAN
发明人： HALLER KURT L , WOLTERS CHRISTIAN
IPC分类号： G01N21/88
CPC分类号： G01N21/9501
摘要： Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.
摘要翻译：提供了用于检查具有增加的灵敏度的晶片的系统和方法。一个系统包括检查子系统，该检查子系统被配置为将光引导到晶片上的一个点上，并产生响应于从晶片上的点散射的光的输出信号。该系统还包括气流子系统，该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体，从而增加了系统的灵敏度。另外，该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

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