专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2019172928A1 PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED THERMAL STABILITY AND METHODS TO FORM THE SAME 审中-公开
公开(公告)号：WO2019172928A1
公开(公告)日：2019-09-12
申请号：PCT/US2018/021737
申请日：2018-03-09
申请人： INTEL CORPORATION
发明人： O'BRIEN, Kevin , OGUZ, Kaan , KUO, Charles , DOCZY, Mark , SATO, Noriyuki
IPC分类号： H01L43/08 , H01L43/02 , H01L43/10
摘要： A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free magnet and the fixed magnet, a coupling layer between the free magnet and the first electrode, where the coupling layer comprises a metal and oxygen and a follower between the coupling layer and the first electrode, wherein the follower comprises a magnetic skyrmion. The skyrmion follower may be either magnetically and electrically coupled to the free magnet to form a coupled system of switching magnetic layers. In an embodiment, the skyrmion follower has a weaker magnetic anisotropy than an anisotropy of the free magnet.

2. 发明申请

WO2018063177A1 SPIN TRANSFER TORQUE MEMORY DEVICE HAVING A PMOS TRANSISTOR COUPLED TO A SPIN TRANSFER TORQUE ELEMENT 审中-公开
标题翻译：自旋转矩存储器装置具有PMOS晶体管耦合到自旋转矩元件
公开(公告)号：WO2018063177A1
公开(公告)日：2018-04-05
申请号：PCT/US2016/054098
申请日：2016-09-28
申请人： INTEL CORPORATION
发明人： KUO, Charles , OGUZ, Kaan , DOCZY, Mark , DOYLE, Brian , O'BRIEN, Kevin
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a spin transfer torque element is connected to a PMOS transistor. In one embodiment, the spin transfer torque element may have a fixed side and a free side with a tunnel barrier layer disposed between the fixed side and the free side, and the PMOS transistor may have a drain structure which is electrically connected to the fixed side of the spin transfer torque element.
摘要翻译：本发明涉及自旋转移力矩存储器装置的制造，其中自旋转移力矩元件连接到PMOS晶体管。在一个实施例中，自旋转移力矩元件可以具有固定侧和自由侧，隧道势垒层设置在固定侧和自由侧之间，并且PMOS晶体管可以具有与固定侧电连接的漏极结构自旋转移力矩元件。

3. 发明申请

WO2018063159A1 SPIN TRANSFER TORQUE MEMORY DEVICES HAVING HEUSLER MAGNETIC TUNNEL JUNCTIONS 审中-公开
标题翻译：具有赫斯勒磁性隧道结的自旋转矩记忆装置
公开(公告)号：WO2018063159A1
公开(公告)日：2018-04-05
申请号：PCT/US2016/053968
申请日：2016-09-27
申请人： INTEL CORPORATION
发明人： DOYLE, Brian , OGUZ, Kaan , SURI, Satyarth , O'BRIEN, Kevin , DOCZY, Mark , KUO, Charles
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/10 , G11C11/16 , G11C11/161 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/12
摘要： The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer.
摘要翻译：本发明涉及自旋转移扭矩存储器装置的制造，其中自旋转移扭矩存储器装置的磁性隧道结形成有赫斯勒合金作为固定和自由磁性层以及隧道势垒所述层设置在固定的赫斯勒磁性层和自由赫斯勒磁性层之间并且邻接固定的赫斯勒磁性层，其中所述隧道势垒层与自由赫斯勒磁性层晶格匹配。在一个实施例中，隧道势垒层可以是钛酸锶层。

4. 发明申请

WO2018125196A1 SPIN TRANSFER TORQUE MEMORY DEVICES HAVING HEUSLER MAGNETIC TUNNEL JUNCTIONS 审中-公开
公开(公告)号：WO2018125196A1
公开(公告)日：2018-07-05
申请号：PCT/US2016/069433
申请日：2016-12-30
申请人： INTEL CORPORATION
发明人： DOYLE, Brian , OGUZ, Kaan , KUO, Charles , O'BRIEN, Kevin , DOCZY, Mark
IPC分类号： H01L43/10 , H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , H01L27/226 , H01L43/10 , H01L43/12
摘要： A spin transfer torque memory device may be fabricated with a magnetic tunnel junction within the spin transfer torque memory device having a fixed magnetic layer comprising at least one of Heusler alloy layer and a semiconducting Heusler alloy layer, a free Heusler magnetic layer comprising a semiconducting Heusler alloy layer, and a metal spacer between the fixed magnetic layer and the free magnetic layer. In further embodiments, the free magnetic layer may comprise both a semiconducting Heusler alloy layer and a Heusler alloy layer.

5. 发明申请

WO2018125210A1 DIFFUSION INSENSITIVE HEUSLER SPIN TRANSFER TORQUE MEMORY DEVICES 审中-公开
公开(公告)号：WO2018125210A1
公开(公告)日：2018-07-05
申请号：PCT/US2016/069498
申请日：2016-12-30
申请人： INTEL CORPORATION
发明人： DOYLE, Brian , OGUZ, Kaan , O'BRIEN, Kevin , DOCZY, Mark , KUO, Charles
IPC分类号： H01L43/10 , H01L43/02 , H01L43/08
CPC分类号： H01L43/08 , H01L27/226 , H01L43/10 , H01L43/12
摘要： A spin transfer torque memory devices may be fabricated having a magnetic tunnel junction with manganese-based Heusler alloys as a fixed magnetic layer and a free magnetic layer, and with a tunnel barrier layer between the fixed magnetic layer and the free magnetic layer, wherein the tunnel barrier layer is insensitive to the diffusion manganese. In one embodiment, the tunnel barrier layer may be a semiconducting Heusler alloy. In another embodiment, the tunnel barrier layer may be one of a cobalt/titanium/antimony Heusler alloy and a nickel/titanium/tin Heusler alloy.

6. 发明申请

WO2018063255A1 PERPENDICULAR STTM FREE LAYER INCLUDING PROTECTIVE CAP 审中-公开
标题翻译： PERPENDICULAR STTM自由层，包括保护盖
公开(公告)号：WO2018063255A1
公开(公告)日：2018-04-05
申请号：PCT/US2016/054517
申请日：2016-09-29
申请人： INTEL CORPORATION
发明人： OGUZ, Kaan , O'BRIEN, Kevin , DOYLE, Brian , KUO, Charles , DOCZY, Mark
IPC分类号： H01L43/02 , H01L43/10 , H01L43/08 , H01L43/12
CPC分类号： H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack and a fixed magnetic stack separated by a dielectric tunneling layer. The free magnetic stack includes an uppermost magnetic layer that is at least partially covered by a cap layer. The cap layer is at least partially covered by a protective layer containing at least one of: ruthenium (Ru); cobalt/iron/boron (CoFeB); molybdenum (Mo); cobalt (Co); tungsten (W); or platinum (Pt). The protective layer is at least partially covered by a cap metal layer which may form a portion of MTJ electrode. The protective layer minimizes the occurrence of physical and/or chemical attack of the cap layer by the materials used in the cap metal layer, beneficially improving the interface anisotropy of the MTJ free magnetic layer.
摘要翻译：垂直自旋转移力矩存储器（pSTTM）装置结合了具有由电介质隧穿层分开的自由磁性堆叠和固定磁性堆叠的磁性隧道结（MTJ）装置。自由磁性叠层包括至少部分被覆盖层覆盖的最上面的磁性层。所述盖层至少部分地被含有以下至少一种的保护层覆盖：钌（Ru）; 钴/铁/硼（CoFeB）; 钼（Mo）; 钴（Co）; 钨（W）; 或铂（Pt）。保护层至少部分地被可形成MTJ电极的一部分的帽金属层覆盖。保护层使盖层金属层中使用的材料对盖层的物理和/或化学侵蚀的发生最小化，有利地改善了MTJ自由磁层的界面各向异性。

7. 发明申请

WO2017105661A1 MAGNETIC MATERIAL COATED WIRE INDUCTOR 审中-公开
标题翻译：磁性材料涂层导线
公开(公告)号：WO2017105661A1
公开(公告)日：2017-06-22
申请号：PCT/US2016/060316
申请日：2016-11-03
申请人： INTEL CORPORATION , LAMBERT, William J. , O'BRIEN, Kevin
发明人： LAMBERT, William J. , O'BRIEN, Kevin , KARHADE, Omkar
IPC分类号： H01F27/28 , H01F17/00
CPC分类号： H01F27/2823 , C23C14/35 , C23C14/505 , C23C28/42 , C23C28/44 , H01F17/04 , H01F27/32 , H01F41/12
摘要： Apparatus and methods are provided for a wire based inductor component. In an example, an inductor apparatus can include a wire and a plurality of individual layers of magnetic material surrounding the wire.
摘要翻译：提供了用于基于电线的电感器组件的设备和方法。在一个示例中，电感器装置可以包括导线和围绕导线的多个单独的磁性材料层。

8. 发明申请

WO2007041124A1 AMINE-FREE DEPOSITION OF METAL-NITRIDE FILMS 审中-公开
标题翻译：金属 - 硝酸盐膜的无胺沉淀
公开(公告)号：WO2007041124A1
公开(公告)日：2007-04-12
申请号：PCT/US2006/037578
申请日：2006-09-26
申请人： INTEL CORPORATION , DUBIN, Valery , O'BRIEN, Kevin , LAVOIE, Adrien , DOMINGUEZ, Juan , JOHNSTON, Steven , PECK, John , THOMSPSON, David , PETERS, David
发明人： DUBIN, Valery , O'BRIEN, Kevin , LAVOIE, Adrien , DOMINGUEZ, Juan , JOHNSTON, Steven , PECK, John , THOMSPSON, David , PETERS, David
IPC分类号： H01L21/768 , H01L21/285 , H01L23/532
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an orgaiiometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供基底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板的表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

9. 发明申请

WO2005109490A1 FORMATION OF AN INTERCONNECT STRUCTURE BY DECOMPOSING A PHOTOSENSITIVE DIELECTRIC LAYER 审中-公开
标题翻译：通过分解光敏介质层形成互连结构
公开(公告)号：WO2005109490A1
公开(公告)日：2005-11-17
申请号：PCT/US2005/010919
申请日：2005-03-31
申请人： INTEL CORPORATION , GOODNER, Michael , O'BRIEN, Kevin , KLOSTER, Grant , MEAGLEY, Robert
发明人： GOODNER, Michael , O'BRIEN, Kevin , KLOSTER, Grant , MEAGLEY, Robert
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , H01L21/76808 , H01L21/76825 , H01L21/76831
摘要： The invention provides a method wherein a layer of photosensitive material is directly patterned. The photosensitive material is then at least partially decomposed to leave voids or air gaps in the layer to provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.
摘要翻译：本发明提供一种其中感光材料层被直接图案化的方法。感光材料然后至少部分地分解以留下该层中的空隙或气隙，以提供具有降低的电阻电容延迟特性的低介电常数层。

10. 发明申请

WO2019059951A1 SPIN HALL MEMORY WITH LOW RESISTANCE INTERCONNECT 审中-公开
公开(公告)号：WO2019059951A1
公开(公告)日：2019-03-28
申请号：PCT/US2017/053292
申请日：2017-09-25
申请人： INTEL CORPORATION
发明人： ALLEN, Gary , GOSAVI, Tanay , O'BRIEN, Kevin , MANIPATRUNI, Sasikanth
IPC分类号： G11C11/16 , H01L43/08 , H01L43/06
CPC分类号： G11C11/161 , G11C11/1675 , H01L43/06 , H01L43/08
摘要： An apparatus is provided which comprises: a magnetic junction; a first layer exhibiting spin orbit coupling properties, wherein the first layer is adjacent to the magnetic junction, wherein the first layer includes a first side and a second side, wherein the first and second sides are aligned with first and second sides of the magnetic junction, respectively; a second layer comprising metal, wherein the second layer has a first side which is adjacent to the first side of the first layer, and wherein the second layer has a second side which is adjacent to the second side of the first layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式