发明申请
WO2019172928A1 PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED THERMAL STABILITY AND METHODS TO FORM THE SAME
审中-公开
基本信息:
- 专利标题： PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHANCED THERMAL STABILITY AND METHODS TO FORM THE SAME
- 申请号：PCT/US2018/021737 申请日：2018-03-09
- 公开(公告)号：WO2019172928A1 公开(公告)日：2019-09-12
- 发明人： O'BRIEN, Kevin , OGUZ, Kaan , KUO, Charles , DOCZY, Mark , SATO, Noriyuki
- 申请人： INTEL CORPORATION
- 申请人地址： 2200 Mission College Blvd Santa Clara, California 95054 US
- 专利权人： INTEL CORPORATION
- 当前专利权人： INTEL CORPORATION
- 当前专利权人地址： 2200 Mission College Blvd Santa Clara, California 95054 US
- 代理机构： HOWARD, James
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/02 ; H01L43/10
摘要：
A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free magnet and the fixed magnet, a coupling layer between the free magnet and the first electrode, where the coupling layer comprises a metal and oxygen and a follower between the coupling layer and the first electrode, wherein the follower comprises a magnetic skyrmion. The skyrmion follower may be either magnetically and electrically coupled to the free magnet to form a coupled system of switching magnetic layers. In an embodiment, the skyrmion follower has a weaker magnetic anisotropy than an anisotropy of the free magnet.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L43/00 | 应用电—磁或者类似磁效应的器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L43/08 | .磁场控制的电阻器 |