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1. 发明申请

WO2013019731A3 PHOSPHATE PRODRUGS 审中-公开
公开(公告)号：WO2013019731A3
公开(公告)日：2013-02-07
申请号：PCT/US2012/048857
申请日：2012-07-30
申请人： INSTITUTE FOR ONEWORLD HEALTH , NGUYEN, Tue , DE HOSTOS, Eugenio L.
发明人： NGUYEN, Tue , DE HOSTOS, Eugenio L.
IPC分类号： C07D285/12 , C07D253/065 , C07D261/08 , A61K31/41 , A61K31/53 , A61P29/00
摘要： A compound of formula: wherein R 1 , L A, R, and n are defined herein, is useful for treating various disorders, including diarrhea.

2. 发明申请

WO2013019169A1 PHOSPHATE PRODRUGS 审中-公开
标题翻译：磷酸盐PRODRUGS
公开(公告)号：WO2013019169A1
公开(公告)日：2013-02-07
申请号：PCT/US2011/001359
申请日：2011-08-01
申请人： INSTITUTE FOR ONEWORLD HEALTH , NGUYEN, Tue , DE HOSTOS, Eugenio
发明人： NGUYEN, Tue , DE HOSTOS, Eugenio
IPC分类号： C07F9/653 , A61K31/675 , A61P1/00 , A61P9/00
CPC分类号： C07F9/65318
摘要： Phosphate and phosphonate prodrug derivatives, for example of Formula IV; where p, A, L A , and R 1 , R 3 -R 6 are as defined herein, are useful for treating various disorders, including diarrhea.
摘要翻译：磷酸酯和膦酸酯前药衍生物，例如式IV; 其中p，A，LA和R1，R3-R6如本文所定义，可用于治疗各种疾病，包括腹泻。

3. 发明申请

WO2016053814A2 PRINTING ON LIQUID MEDIUM USING LIQUID INK 审中-公开
标题翻译：使用液体液体印刷液体介质
公开(公告)号：WO2016053814A2
公开(公告)日：2016-04-07
申请号：PCT/US2015/052533
申请日：2015-09-28
申请人： PHAN, Hue L. , DANG, Tai Ngoc , NGUYEN, Tue
发明人： PHAN, Hue L. , DANG, Tai Ngoc , NGUYEN, Tue
IPC分类号： B05D5/00
CPC分类号： B41J3/407 , A23P2020/253 , A23V2002/00 , B41M3/00 , B41M5/0017 , B41M5/0047
摘要： Ink jet printing on a liquid medium can be performed using liquid inks having a thermo inversion gelling property. The liquid ink can include a hyperthermogelling component having a gelling temperature. When the liquid ink is jetted on the liquid medium, the liquid ink can gel to form gel dots. The gel dots can resist against liquid dispersion, allowing the formation of a high resolution image on the liquid medium.
摘要翻译：可以使用具有热倒转胶凝性的液体油墨在液体介质上进行喷墨印刷。液体油墨可以包括具有胶凝温度的超热凝胶组分。当液体墨水喷射在液体介质上时，液体墨水可以凝胶化形成凝胶点。凝胶点可以抵抗液体分散，允许在液体介质上形成高分辨率图像。

4. 发明申请

WO2007140455A2 SYSTEM AND METHOD FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体处理的系统和方法
公开(公告)号：WO2007140455A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/070082
申请日：2007-05-31
申请人： TEGAL CORPORATION , NGUYEN, Tue , NGUYEN, Tai, Dung , BERCAW, Craig, Alan
发明人： NGUYEN, Tue , NGUYEN, Tai, Dung , BERCAW, Craig, Alan
IPC分类号： H01L21/31
CPC分类号： C23C16/482 , C23C16/45536 , H01J37/32009 , H01J37/32321 , H01J37/32339 , H01L21/67115 , H01L21/67248
摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
摘要翻译：公开了利用处理室执行半导体处理的系统和方法; 适合重复触发的闪光灯; 以及耦合到闪光灯的控制输入以触发闪光灯的控制器。该系统可以在晶片处理中部署与闪光灯并联的固态等离子体源。

5. 发明申请

WO2008077155A1 STERILIZATION OF OBJECTS CONTAINING BIOLOGICAL MOLECULES 审中-公开
标题翻译：包含生物分子的物体的灭菌
公开(公告)号：WO2008077155A1
公开(公告)日：2008-06-26
申请号：PCT/US2007/088728
申请日：2007-12-21
申请人： GENENTECH, INC. , LAM, Xanthe, M. , NGUYEN, Tue
发明人： LAM, Xanthe, M. , NGUYEN, Tue
IPC分类号： A61L2/00 , A61L2/20
CPC分类号： A61L2/206 , A61L2/0094
摘要： The invention relates to methods for surface-sterilizing objects containing ethylene-oxide-sensitive, temperature-sensitive compounds, including biological molecules.
摘要翻译：本发明涉及用于表面消毒含有环氧乙烷敏感的温度敏感化合物（包括生物分子）的物体的方法。

6. 发明申请

WO2004070793A2 METHOD TO PLASMA DEPOSIT ONTO AN ORGANIC POLYMER DIELECTRIC FILM 审中-公开
标题翻译：等离子体沉积在有机聚合物电介质膜上的方法
公开(公告)号：WO2004070793A2
公开(公告)日：2004-08-19
申请号：PCT/US2004/003187
申请日：2004-02-04
申请人： TEGAL CORPORATION , ZHANG, Zhihong , NGUYEN, Tai, Dung , NGUYEN, Tue
发明人： ZHANG, Zhihong , NGUYEN, Tai, Dung , NGUYEN, Tue
IPC分类号： H01L
CPC分类号： H01L21/76843 , H01L21/31058
摘要： A method for protecting a device such as an organic polymer underlayer during a plasma assisted process of depositing a subsequent film on the organic polymer underlayer is disclosed. The method provides for the deposition of a protective continuous layer using organic polymer damage-free technique in order to not damage the organic polymer underlayer and to protect the organic polymer underlayer during the plasma assisted process of depositing a subsequent film. The organic polymer damage-free technique is a non-plasma process, using only thermal energy and chemical reactions to deposit the continuous layer. The organic polymer damage-free technique can also be a plasma assisted process using a reduced plasma power that is low enough that does not damage the organic polymer underlayer. This method is applicable to many organic polymer underlayers such as organic polymer is aromatic hydrocarbon, polytetrafluoroehtylene (PTFE), parylene, benzocyclobutene-based polymers (BCB), polyimide, fluorinated polyimide, fluorocarbon-based polymers, poly(arylene ether)-based polymers (PAE), and cyclohexanone-based polymers, and to many plasma assisted deposition processes such as plasma enhanced CVD deposition, plasma enhanced ALD deposition and plasma enhanced NLD deposition of silicon dioxide, silicon nitride, nitrided diffusion barrier such as TiN, TaN, WN, TiSiN, TaSiN, and WSiN.
摘要翻译：公开了一种在有机聚合物底层沉积后续膜的等离子体辅助过程中保护诸如有机聚合物底层之类的装置的方法。该方法提供了使用有机聚合物无损技术沉积保护性连续层，以便在沉积后续膜的等离子体辅助工艺期间不损坏有机聚合物底层并保护有机聚合物底层。有机聚合物无损伤技术是一种非等离子体工艺，仅使用热能和化学反应沉积连续层。有机聚合物无损伤技术也可以是等离子体辅助工艺，其使用的还原等离子体功率足够低，不会损坏有机聚合物底层。该方法适用于多种有机聚合物底层，如有机聚合物为芳烃，聚四氟乙烯（PTFE），聚对二甲苯，苯并环丁烯系聚合物（BCB），聚酰亚胺，氟化聚酰亚胺，碳氟聚合物，聚（亚芳基醚）（PAE）和环己酮基聚合物，以及许多等离子体辅助沉积工艺，例如等离子体增强CVD沉积，等离子体增强ALD沉积和二氧化硅的等离子体增强NLD沉积，氮化硅，氮化扩散阻挡层如TiN，TaN，WN ，TiSiN，TaSiN和WSiN。

7. 发明申请

WO2004070074A2 NANOLAYER DEPOSITION PROCESS 审中-公开
标题翻译： NANOLAYER沉积工艺
公开(公告)号：WO2004070074A2
公开(公告)日：2004-08-19
申请号：PCT/US2004/003349
申请日：2004-02-04
申请人： TEGAL CORPORATION , NGUYEN, Tue , NGUYEN, Tai, Dung
发明人： NGUYEN, Tue , NGUYEN, Tai, Dung
IPC分类号： C23C
CPC分类号： C23C16/45525 , C23C16/56
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition ("NLD") is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self-limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already-deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping, or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.
摘要翻译：提供了称为NanoLayer沉积（“NLD”）的CVD和ALD的混合沉积工艺。纳米层沉积工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积薄膜而不是自限制的沉积工艺的第一步骤，然后第二步骤是清洗第一组前体和第三步引入第二多个前体以修饰沉积的薄膜的步骤。使用第一组前体的NLD工艺中的沉积步骤不是自限制的，而且是衬底温度和工艺时间的函数。第二组前体改变已经沉积的膜特性。第二组前体可以处理沉积的膜，例如膜组成的改变，掺杂或从沉积膜去除杂质。第二组前体还可以在沉积的膜上沉积另一层。附加层可以与现有层反应以形成化合物层，或者可以具有最小的反应以形成纳米层间膜。

8. 发明申请

WO2004070794A3 METHOD TO DEPOSIT AN IMPERMEABLE FILM ONTO A POROUS LOW-K DIELECTRIC FILM 审中-公开
公开(公告)号：WO2004070794A3
公开(公告)日：2004-08-19
申请号：PCT/US2004/003188
申请日：2004-02-04
申请人： TEGAL CORPORATION , ZHANG, Zhihong , NGUYEN, Tai, Dung , NGUYEN, Tue
发明人： ZHANG, Zhihong , NGUYEN, Tai, Dung , NGUYEN, Tue
IPC分类号： C23C16/40
摘要： A method for improving the adhesion of an impermeable film on a device such as porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped or adsorbed molecules such as water, alcohol, HCl, HF vapor, of the porous low-k dielectric film. The method also provides in-situ deposition of the impermeable film following the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides in-situ deposition of the impermeable film following the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules

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