专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011067729A3 HIGH RESOLUTION PIXEL ARCHITECTURE 审中-公开
标题翻译：高分辨率像素架构
公开(公告)号：WO2011067729A3
公开(公告)日：2011-08-04
申请号：PCT/IB2010055541
申请日：2010-12-01
申请人： IGNIS INNOVATION INC , CHAJI GHOLAMREZA , GUPTA VASUDHA , NATHAN AROKIA
发明人： CHAJI GHOLAMREZA , GUPTA VASUDHA , NATHAN AROKIA
IPC分类号： G09G3/3225 , H01L27/32 , G09F9/33
CPC分类号： H01L27/3262 , G09G3/3233 , G09G2300/0426 , G09G2300/0439 , H01L27/3213 , H01L27/326 , H01L51/5271
摘要： A high resolution pixel using organic light emitting devices (OLEDs) in a staggered arrangement to increase aperture ratio is disclosed. The arrangement may be used with both bottom and top emission type pixels. The arrangement includes a first organic light emitting device emitting light of a first color. A second organic light emitting device emitting light of a second color is located in a bottom row under the first organic light emitting device. A third organic light emitting device emitting light of a third color is located in a top row with the first organic light emitting device.
摘要翻译：公开了使用有机发光器件（OLED）以交错布置来增加孔径比的高分辨率像素。该排列可以与底部和顶部发射型像素一起使用。该装置包括发射第一颜色的光的第一有机发光装置。发出第二颜色光的第二有机发光装置位于第一有机发光装置下方的最下排。发出第三颜色光的第三有机发光器件与第一有机发光器件位于最上面的行中。

2. 发明申请

WO02067328A3 ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING SHIELD ELECTRODES 审中-公开
标题翻译：有机发光二极管显示屏具有屏蔽电极
公开(公告)号：WO02067328A3
公开(公告)日：2002-11-07
申请号：PCT/CA0200180
申请日：2002-02-18
申请人： IGNIS INNOVATION INC , NATHAN AROKIA , SERVATI PEYMAN , KARIM KARIM S
发明人： NATHAN AROKIA , SERVATI PEYMAN , KARIM KARIM S
IPC分类号： H01L51/50 , G09F9/30 , H01L21/336 , H01L21/77 , H01L27/12 , H01L27/15 , H01L27/32 , H01L29/786 , H01L27/00
CPC分类号： H01L27/3272 , H01L27/12 , H01L27/124 , H01L2251/5315
摘要： An organic light emitting diode (OLED) display includes at least one shield electrode (SE) between a cathode layer (31c) and an OLED drive circuit (34). The OLED drive circuit has at least one thin-film transistor (TFT), and the shield electrode is disposed to correspond to the thin-film transistor and closer to the cathode layer, covering an entire region between the source and drain of the thin-film transistor. The shield electrode is either grounded or tied to the gate of the thin-film transistor, to thereby minimize parasitic capacitance in the pixels of the display to enhance the display performance. The presented architecture enables high density drive circuit integration in amorphous silicon or other technologies, yet preserving a high display aperture ratio.
摘要翻译：有机发光二极管（OLED）显示器包括在阴极层（31c）和OLED驱动电路（34）之间的至少一个屏蔽电极（SE）。 OLED驱动电路具有至少一个薄膜晶体管（TFT），并且屏蔽电极设置为对应于薄膜晶体管并且更靠近阴极层，覆盖薄膜晶体管的源极和漏极之间的整个区域，薄膜晶体管。屏蔽电极或者接地或者连接到薄膜晶体管的栅极，从而使显示器的像素中的寄生电容最小化，以提高显示性能。所提出的架构能够实现非晶硅或其他技术中的高密度驱动电路集成，同时保持高显示开口率。

3. 发明申请

WO2004075245A3 A PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL 审中-公开
标题翻译：具有有机发光二极管的像素和制作像素的方法
公开(公告)号：WO2004075245A3
公开(公告)日：2004-10-14
申请号：PCT/CA2004000256
申请日：2004-02-24
申请人： IGNIS INNOVATION INC , STRIAKHILEV DENIS , NATHAN AROKIA , VYGRANENKO YURI , TAO SHENG
发明人： STRIAKHILEV DENIS , NATHAN AROKIA , VYGRANENKO YURI , TAO SHENG
IPC分类号： G09G3/32 , H01L20060101 , H01L27/32 , H01L33/00 , H05B33/10 , H01L51/20
CPC分类号： H01L27/3248 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L51/5234 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
摘要翻译：提供了具有有机发光二极管（OLED）的像素和用于制造像素的方法。在基于薄膜晶体管（TFT）的背板和OLED层之间提供平坦化介电层。 TFT背板和OLED层之间的通孔与TFT背板形成小于90度的侧壁角。 OLED底部电极图案的通孔区域和边缘可被绝缘盖覆盖。

4. 发明申请

WO02067337A3 ACTIVE PIXEL SENSOR FOR DIGITAL IMAGING 审中-公开
标题翻译：用于数字成像的主动像素传感器
公开(公告)号：WO02067337A3
公开(公告)日：2003-05-15
申请号：PCT/CA0200172
申请日：2002-02-18
申请人： IGNIS INNOVATION INC , NATHAN AROKIA , KARIM KARIM S
发明人： NATHAN AROKIA , KARIM KARIM S
IPC分类号： H01L27/146 , H01L31/00
CPC分类号： H01L27/14658
摘要： An active pixel sensor for digital imaging comprises a detector, a readout circuit, and a resistive load. The detector is integrated with the readout circuit and the readout circuit has a plurality of amorphous silicon based thin-film transistors (TFTs). The readout circuit is embedded under the detector to provide a high fill factor. A signal charge is accumulated on a pixel capacitance during an integration mode and is transferred to an external electronics for data acquisition via the readout circuit during a readout mode. An output current from the readout circuit is converted to a voltage through the resistive load. The resistive load may be a thin-film transistor operated in a saturation regime and having a width larger than a length in size. The active pixel sensor amplifies an on-pixel sensor input signal to improve a noise immunity of sensitive sensor input signals to external noise sources and its linearity together with a fast pixel readout time.
摘要翻译：用于数字成像的有源像素传感器包括检测器，读出电路和电阻负载。检测器与读出电路集成，读出电路具有多个基于非晶硅的薄膜晶体管（TFT）。读出电路嵌入在检测器下面以提供高填充因子。在积分模式期间，信号电荷被累积在像素电容上，并且在读出模式期间经由读出电路被传送到用于数据采集的外部电子装置。来自读出电路的输出电流通过电阻负载转换成电压。电阻性负载可以是以饱和状态操作且具有大于长度尺寸的宽度的薄膜晶体管。有源像素传感器放大像素内传感器输入信号，以提高敏感传感器输入信号对外部噪声源的噪声抗扰性及其线性以及快速像素读出时间。

5. 发明申请

WO03017241A2 INTEGRATED MULTIPLEXER/DE-MULTIPLEXER FOR ACTIVE-MATRIX DISPLAY/IMAGING ARRAYS 审中-公开
标题翻译：用于有源矩阵显示/成像阵列的集成多路复用器/去复用器
公开(公告)号：WO03017241A2
公开(公告)日：2003-02-27
申请号：PCT/CA0201290
申请日：2002-08-15
申请人： IGNIS INNOVATION INC , NATHAN AROKIA , KARIM KARIM S , MOHAN NITIN , KUMAR ANIL , SAKARIYA KAPIL
发明人： NATHAN AROKIA , KARIM KARIM S , MOHAN NITIN , KUMAR ANIL , SAKARIYA KAPIL
IPC分类号： G09G3/36 , G09G
CPC分类号： G09G3/3677
摘要： This invention presents Vt-shift invariant integrated multiplexer and de-multiplexer circuits that can be fabricated with a-Si:H, poly-crystalline silicon, or organic/polymer TFTs. The de-multiplexer and multiplexer includes a plurality of TFTs which are connected in series, and a drive TFT. These circuits are used with active matrix displays to control the gate addressing, and with imaging arrays to multiplex the read-out data.
摘要翻译：本发明提出了可以用a-Si：H，多晶硅或有机/聚合物TFT制造的Vt移位不变集成复用器和解复用器电路。解复用器和多路复用器包括多个串联连接的TFT和驱动TFT。这些电路与有源矩阵显示器一起使用来控制栅极寻址，并与成像阵列复用读出的数据。

6. 发明申请

WO2008033294A3 HIGH FILL-FACTOR SENSOR WITH REDUCED COUPLING 审中-公开
标题翻译：高填充因子传感器，耦合减少
公开(公告)号：WO2008033294A3
公开(公告)日：2008-05-22
申请号：PCT/US2007019640
申请日：2007-09-10
申请人： CARESTREAM HEALTH INC , HEILER GREGORY N , TREDWELL TIMOTHY J , BEDZYK MARK D , KERR ROGER S , VYGRANENKO YURIY , STRIAKHILEV DENIS , HONG YONGTAEK , LAI JACKSON C , NATHAN AROKIA
发明人： HEILER GREGORY N , TREDWELL TIMOTHY J , BEDZYK MARK D , KERR ROGER S , VYGRANENKO YURIY , STRIAKHILEV DENIS , HONG YONGTAEK , LAI JACKSON C , NATHAN AROKIA
IPC分类号： H01L27/146
CPC分类号： H01L27/14658
摘要： A photosensor array includes data and scan lines (124, 148), circuitry of each data line/scan line pair formed in a backplane (110) on a substrate (102). On a first electrode scan line (148) a switching element (112) responds to a scan signal, connecting a first terminal (106) to a second terminal (108). A front plane (120) has sensing elements (122) indicating a measure of a received stimulus and including a charge collection electrode (130). An insulating layer (140) disposed between the backplane (110) and the front plane (120) contains at least a first via (136) connecting the first terminal (106) of the switching element (112) in the backplane (110) to a charge collection electrode (130) of the sensing element (122) in the front plane (120). A second via (126) connects between the second terminal (108) of the switching element (112) and the data line (124).
摘要翻译：光电传感器阵列包括数据和扫描线（124,148），形成在衬底（102）上的背板（110）中的每条数据线/扫描线对的电路。在第一电极扫描线（148）上，开关元件（112）响应扫描信号，将第一端子（106）连接到第二端子（108）。前平面（120）具有指示接收到的刺激的量度并且包括电荷收集电极（130）的感测元件（122）。设置在底板（110）和前平面（120）之间的绝缘层（140）至少包含将底板（110）中的开关元件（112）的第一端子（106）连接到感测元件（122）的电荷收集电极（130）在前平面（120）中。第二通路（126）连接在开关元件（112）的第二端子（108）和数据线（124）之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式