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1. 发明申请

WO2011080016A2 METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM 审中-公开
标题翻译：方向自组装方法和形成的层状结构
公开(公告)号：WO2011080016A2
公开(公告)日：2011-07-07
申请号：PCT/EP2010068318
申请日：2010-11-26
申请人： IBM , SANDERS DANIEL PAUL , CHENG JOY , HINSBERG WILLIAM , KIM HO-CHEOL , COLBURN MATTHEW , HARRER STEFAN , HOLMES STEVEN
发明人： SANDERS DANIEL PAUL , CHENG JOY , HINSBERG WILLIAM , KIM HO-CHEOL , COLBURN MATTHEW , HARRER STEFAN , HOLMES STEVEN
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.
摘要翻译：形成包括自组装材料的层状结构的方法包括：在基底上设置非交联光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 可选地加热曝光的光致抗蚀剂层; 在第一显影工艺中用含水碱性显影剂显影曝光的光致抗蚀剂层，形成初始图案化的光致抗蚀剂层; 以光学，光学和/或化学方式处理初始图案化的光致抗蚀剂层，从而形成经处理的图案化的光刻胶层，其包含设置在第一衬底表面上的非交联处理的光致抗蚀剂; 在经处理的图案化光刻胶层上浇铸取向控制材料在第一溶剂中的溶液，并除去第一溶剂，形成取向控制层; 加热所述取向控制层以有效地将所述取向控制材料的一部分粘合到第二基板表面; 在第二显影过程中除去至少一部分经处理的光致抗蚀剂和任选的任何未结合的取向控制材料，从而形成用于自组装的预图案; 可选地加热预图案; 将能够自组装的溶解在第二溶剂中的材料的溶液浇铸在预图案上并除去第二溶剂; 并且允许铸造材料通过任选的加热和/或退火自组装，从而形成包括自组装材料的层状结构。

2. 发明申请

WO2010133422A3 DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS USING SEGMENTED PREPATTERNS 审中-公开
标题翻译：使用SEGMENTED PREPATTERNS的嵌段共聚物的方向自组装
公开(公告)号：WO2010133422A3
公开(公告)日：2011-05-12
申请号：PCT/EP2010055412
申请日：2010-04-23
申请人： IBM , IBM UK , CHENG JOY , NA YOUNG-HYE , LAI KAFAI , RETTNER CHARLES THOMAS , SANDERS DANIEL PAUL , LI WAI-KIN
发明人： CHENG JOY , NA YOUNG-HYE , LAI KAFAI , RETTNER CHARLES THOMAS , SANDERS DANIEL PAUL , LI WAI-KIN
IPC分类号： B81C1/00
CPC分类号： B81C1/00031 , B81C1/00404 , B81C2201/0149 , H01L21/0337 , H01L21/31144
摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.
摘要翻译：例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。例如，开口的横截面可以由重叠的圆形区域给出。侧壁在各个点处相邻，在那里它们限定突起。将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。在开口中形成离散的分离的区域，其被去除以形成孔，其可以被转移到下面的基底中。这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

3. 发明申请

WO2014120320A3 FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN 审中-公开
标题翻译：一个复合图案的形成，包括一个自定义为一个预处理的周期性图案
公开(公告)号：WO2014120320A3
公开(公告)日：2014-10-02
申请号：PCT/US2013069988
申请日：2013-11-14
申请人： IBM
发明人： CHENG JOY , DOERK GREGORY S , RETTNER CHARLES T , SANDERS DANIEL P
IPC分类号： H01L21/027 , G03F1/00 , G03F7/20
CPC分类号： H05K3/007 , G03F7/0002 , H05K2203/0548
摘要： A chemical pattern layer (32, 33) including an orientation control material (32) and a prepattern material (33) is formed over a substrate (10). The chemical pattern layer (32, 33) includes alignment-conferring features (33D) and additional masking features (33S). A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component (40) is removed selective to a second polymeric block component (50) by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.
摘要翻译：在衬底（10）上形成包括取向控制材料（32）和预模式材料（33）的化学图案层（32,33）。化学图案层（32,33）包括对准赋予特征（33D）和附加掩模特征（33S）。自组装材料在化学图案层上施加并自对准。聚合物嵌段组分与对准赋予特征对准，而对准不会被附加的掩蔽特征所改变。通过蚀刻将第一聚合物嵌段组分（40）选择性地除去第二聚合物嵌段组分（50）以形成具有图案的第二聚合物嵌段组分部分。化学图案层内的抗蚀刻材料的图案和第二聚合物嵌段组分部分的图案的复合图案可以使用至少另一种蚀刻转移到下面的材料层中。

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