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1. 发明申请

WO2011074909A3 METHOD FOR FORMING A SELECTIVE EMITTER FOR A SOLAR CELL 审中-公开
标题翻译：形成用于太阳能电池的选择性发射体的方法
公开(公告)号：WO2011074909A3
公开(公告)日：2011-11-10
申请号：PCT/KR2010009065
申请日：2010-12-17
申请人： HYUN DAI HEAVY IND CO LTD , LEE JOON SUNG , OH HOON , CHO EUN CHEL , LEE WON JAE , JEON MIN SUNG
发明人： LEE JOON SUNG , OH HOON , CHO EUN CHEL , LEE WON JAE , JEON MIN SUNG
IPC分类号： H01L31/042
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The method for forming a selective emitter for a solar cell according to the present invention comprises the steps of: preparing a crystalline silicon substrate of a first conductive type; forming a low-density ion implantation layer of a second conductive type in the substrate; forming a high-density semiconductor layer by irradiating a laser onto the surface of the substrate in a location where a front electrode is to be formed, and so activating impurity ions in the low-density ion implantation layer of the second conductive type; and forming a semiconductor layer of the second conductive type by subjecting the substrate to a heat treatment and so activating the low-density ion implantation layer of the second conductive type.
摘要翻译：根据本发明的用于形成太阳能电池的选择性发射体的方法包括以下步骤：制备第一导电类型的晶体硅衬底; 在所述衬底中形成第二导电类型的低密度离子注入层; 通过在要形成前电极的位置上照射激光到基板的表面，从而激活第二导电类型的低密度离子注入层中的杂质离子，形成高密度半导体层; 以及通过对所述衬底进行热处理并激活所述第二导电类型的低密度离子注入层来形成所述第二导电类型的半导体层。

2. 发明申请

WO2011087341A3 METHOD FOR FABRICATING A BACK CONTACT SOLAR CELL 审中-公开
标题翻译：制造背接触式太阳能电池的方法
公开(公告)号：WO2011087341A3
公开(公告)日：2011-12-08
申请号：PCT/KR2011000354
申请日：2011-01-18
申请人： HYUN DAI HEAVY IND CO LTD , JEON MIN SUNG , LEE WON JAE , CHO EUN CHEL , LEE JOON SUNG
发明人： JEON MIN SUNG , LEE WON JAE , CHO EUN CHEL , LEE JOON SUNG
IPC分类号： H01L31/042
CPC分类号： H01L31/1804 , H01L31/02363 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a method for fabricating a back contact solar cell, in which an ion implantation process and a thermal diffusion process are combined in forming a p+ region and an n+ region on a back surface of a substrate, to thereby minimize the number of processes. The method for fabricating a back contact solar cell according to the present invention comprises the following steps: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on the front, back and side surfaces of the substrate; implanting a p-type impurity ion on the back surface of the substrate to form a p-type impurity region; patterning the thermal diffusion control film such that the back surface of the substrate can be selectively exposed; and performing a thermal diffusion process to form a high concentration back electric field layer (n+) on the exposed back surface area of the substrate and a low concentration front electric field layer (n-) on the front surface area of the substrate, and to activate the p-type impurity region to form a p+ emitter region.
摘要翻译：背接触太阳能电池的制造方法技术领域本发明涉及一种背接触太阳能电池的制造方法，其中离子注入工艺和热扩散工艺被结合以在衬底的背表面上形成p +区域和n +区域，的过程。根据本发明的制造背接触太阳能电池的方法包括以下步骤：制备n型晶体硅衬底; 在衬底的正面，背面和侧面上形成热扩散控制膜; 在衬底的背表面上注入p型杂质离子以形成p型杂质区; 构图热扩散控制膜，使得衬底的背表面可以被选择性地暴露; 并且执行热扩散工艺以在衬底的暴露的后表面区域上形成高浓度背电场层（n +），并且在衬底的前表面区域上形成低浓度前电场层（n-）激活p型杂质区域以形成p +发射极区域。

3. 发明申请

WO2006057464A2 PROCESS FOR PRODUCING SILICON NANOFILAMENTOUS FORM 审中-公开
标题翻译：生产硅纳米颗粒的方法
公开(公告)号：WO2006057464A2
公开(公告)日：2006-06-01
申请号：PCT/JP2005022397
申请日：2005-11-29
申请人： UNIV TOKYO NAT UNIV CORP , KAMISAKO KOUICHI , JEON MIN SUNG
发明人： KAMISAKO KOUICHI , JEON MIN SUNG
CPC分类号： H01L29/0665 , B82Y10/00 , C01B33/03 , H01L29/0673 , H01L29/0676 , Y10S977/762
摘要： Silicon nanofilamentous forms with different structures and properties can be produced by appropriately setting radical pretreatment conditions (hydrogen radical action conditions such as concentration). There is provided a process characterized in that in the presence of a catalyst obtained by radical pretreatment of at least one member selected from among Ga, Ga compounds, In, In compounds, Tl and Tl compounds, a silicon nanofilamentous form is generated from silicon radical-activated species.
摘要翻译：通过适当设定自由基预处理条件（氢自由基作用条件如浓度），可以制备具有不同结构和性质的硅纳米丝形式。提供了一种方法，其特征在于在通过对选自Ga，Ga化合物，In，In化合物，Tl和Tl化合物中的至少一种的基团进行预处理获得的催化剂存在下，由硅自由基产生硅纳米纤维形式活化物种

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