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    • 2. 发明申请
    • SELF-COMPENSATING HYDROSTATIC FLATTENING OF SEMICONDUCTOR SUBSTRATES
    • 自我补偿半导体衬底的静电弛豫
    • WO1984003176A1
    • 1984-08-16
    • PCT/US1983001989
    • 1983-12-16
    • HUGHES AIRCRAFT COMPANY
    • HUGHES AIRCRAFT COMPANYLITTLE, Michael, J.BROWN, Roger, H.EFRON, UziHOBERG, Clarence, P.
    • H01L31/02
    • H01L21/0201G01B11/26H01L31/0203
    • A semiconductive substrate (1), such as a silicon wafer, is mounted on a baseplate (3), for inclusion in an optical device such as a liquid crystal light valve. An optical flat (9) presses the top surface of the silicon wafer toward the baseplate and against a ring seal (5) surrounding a fluid adhesive (7). The fluid adhesive hydrostatically distributes the force of compression to guarantee optical flatness and self-compensation for the amount fluid adhesive surrounded by the O-ring. The optical flatness of the semiconductor substrate is limited only by the flatness of the optical flat against which it is compressed. Parallel alignment of the optical flat (9), the substrate (1) and the baseplate (3) is achieved by reflecting a laser beam (20) through the semiconductive substrate and observing the interference fringes therein, while adjusting the relative alignment so as to maximize the distance between fringes.
    • 诸如硅晶片的半导体基板安装在基板上以包含在诸如液晶光阀的光学装置中。 光学平面将硅晶片的顶表面压向底板并且抵靠围绕流体粘合剂的O形圈密封件。 流体粘合剂可以流体分配压缩力,以保证由O形环包围的流体粘合剂的光学平面度和自我补偿。 半导体衬底的光学平面度仅受到被压缩的光学平面的平坦度的限制。 通过将激光束反射通过半导体基片并观察其中的干涉条纹,同时调整相对对准以使条纹之间的距离最大化,来实现光学平面,基底和基板的平行对准。
    • 5. 发明申请
    • NIPI REFRACTIVE INDEX MODULATION APPARATUS AND METHOD
    • NIPI折射率调制装置和方法
    • WO1988005555A1
    • 1988-07-28
    • PCT/US1987003304
    • 1987-12-14
    • HUGHES AIRCRAFT COMPANY
    • HUGHES AIRCRAFT COMPANYSCHULMAN, Joel, N.EFRON, Uzi
    • G02F01/015
    • G02F1/017B82Y20/00G02F1/01716G02F2001/0151
    • Various optical modulation systems and methods which are based upon modulating the refractive index of a nipi structure. The refractive index modulation is accomplished by applying a controlled voltage differential across the n-doped and p-doped layers of the structure. Staggered contacts to the layers are formed by conductive elements which extend through the structure. One of the elements establishes ohmic contacts with the n layers, and the other with the players. When implemented as an optical spatial phase modulator, one of the nipi contacts is provided as a grid which divides the structure into a matrix of pixel elements, with the other contact comprising separate wires extending through each pixel. A spatial voltage pattern is applied to the pixel wires to inject charge into their corresponding layers, and thereby modulate the refractive indices of the pixels. This imposes a desired spatial phase modulation onto a readout beam transmitted through the nipi structure. Various guided wave applications are also disclosed in which a beam is transmitted through a nipi structure parallel to the n and p layers. The nipi structure is not divided into pixels, but rather has a common voltage differential between its n and p layers. The structure's refractive index is spatially modulated by varying this voltage differential, whereby the spatial voltage modulation is transferred onto the beam.