专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005052989A2 DIELECTRIC FILMS FOR NARROW GAP-FILL APPLICATIONS 审中-公开
标题翻译：用于窄间隙填充应用的介电膜
公开(公告)号：WO2005052989A2
公开(公告)日：2005-06-09
申请号：PCT/US2004/033035
申请日：2004-10-06
申请人： HONEYWELL INTERNATIONAL INC. , ENDISCH, Denis , LEUNG, Roger , XIE, Songyuan , HACKER, Nigel , DENG, Yanpei
发明人： ENDISCH, Denis , LEUNG, Roger , XIE, Songyuan , HACKER, Nigel , DENG, Yanpei
IPC分类号： H01L
CPC分类号： H01L21/02282 , H01L21/02203 , H01L21/316 , H01L21/76837
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
摘要翻译：使用由分散在溶剂中的致密材料组成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。介电材料对于金属前介电和浅沟槽隔离应用特别有用。根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。中间层通过用液相基体材料例如旋涂聚合物渗透而改性，然后通过用气相基体材料渗透固化，然后固化或单独固化以提供间隙填充，热稳定的抗蚀刻介电材料。

2. 发明申请

WO2004037877A2 ORGANOSILOXANES 审中-公开
标题翻译：有机硅氧烷
公开(公告)号：WO2004037877A2
公开(公告)日：2004-05-06
申请号：PCT/US2003/017658
申请日：2003-06-03
申请人： HONEYWELL INTERNATIONAL INC. , BEDWELL, William , HACKER, Nigel , LEUNG, Roger , IWAMOTO, Nancy , NEDBAL, Jan , XIE, Songyuan , MORO, Lorenzo , MUKHERJEE, Shyama
发明人： BEDWELL, William , HACKER, Nigel , LEUNG, Roger , IWAMOTO, Nancy , NEDBAL, Jan , XIE, Songyuan , MORO, Lorenzo , MUKHERJEE, Shyama
IPC分类号： C08G
CPC分类号： C08G77/12 , C09D183/04 , G03F7/0751 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L2924/12044
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y 0.01-1.0 SiO 1.5-2 ] a [Z 0.01-1.0 SiO 1.5-2 ]b[H 0.01-1.0 SiO 1.5-2 ] c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.
摘要翻译：本发明提供了包含至少80重量％的式I的有机硅氧烷：[Y0.01-1.0SiO1.5-2] a [Z 0.01-1.0SiO1.5-2] b [H0.01-1.0SiO1.5 -2] c其中Y是芳基; Z是烯基; a是一级方程式的15％至70％; b是式I的2％至50％; c为式I的20％至80％。本发明的有机硅氧烷可用作陶瓷粘合剂，高温密封剂和纤维基质粘合剂。本发明的组合物也可用作粘合促进剂，因为当与非微电子或微电子应用中的其它材料结合时，其具有良好的粘合性能。优选地，本发明的组合物用作微电子应用中的蚀刻停止，硬掩模和电介质。

3. 发明申请

WO2004046224A1 ORGANOHYDRIDOSILOXANE RESINS WITH HIGH ORGANIC CONTENT 审中-公开
标题翻译：具有高有机含量的组氨酸硅氧烷树脂
公开(公告)号：WO2004046224A1
公开(公告)日：2004-06-03
申请号：PCT/US2003/036353
申请日：2003-11-12
申请人： HONEYWELL INTERNATIONAL INC. , HACKER, Nigel , LEFFERT, Scott , FIGGE, Lisa
发明人： HACKER, Nigel , LEFFERT, Scott , FIGGE, Lisa
IPC分类号： C08G77/08
CPC分类号： C08G77/12 , C08G77/24
摘要： An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.
摘要翻译：提出了具有笼形构象，至少约40摩尔百分比含碳取代基和介电常数小于约2.7的有机氢硅氧烷聚合物。笼状聚合物的每个硅原子与至少三个氧原子和氢原子或有机取代基结合。通过提供这样一种基本上没有羟基或烷氧基取代基的笼式结构，无论是在聚合物主链上还是在末端硅原子上，基本上不会在溶液中发生链延长聚合。使用双相溶剂系统和固相或相转移催化剂形成分子量在约400至约200,000原子质量单位范围内的这种有机氢硅氧烷树脂，以帮助氢三卤代硅烷与至少一种有机三卤代硅烷的缩合。

4. 发明申请

WO2004017335A1 NANOPOROUS MATERIALS AND METHODS OF FORMATION THEREOF 审中-公开
标题翻译：纳米材料及其形成方法
公开(公告)号：WO2004017335A1
公开(公告)日：2004-02-26
申请号：PCT/US2002/026276
申请日：2002-08-15
申请人： HONEYWELL INTERNATIONAL INC. , HACKER, Nigel , LEFFERT, Scott , FIGGE, Lisa , SPEAR, Richard , BEDWELL, William , RAMOS, Teresa
发明人： HACKER, Nigel , LEFFERT, Scott , FIGGE, Lisa , SPEAR, Richard , BEDWELL, William , RAMOS, Teresa
IPC分类号： H01B3/02
CPC分类号： H01L21/02126 , C08G77/12 , C08G77/20 , H01B3/46 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： Low dielectric materials are described herein that comprise a plurality of pores or nanopores in addition to the ultrananopores.It is further contemplated that the low dielectric materials described herein will have a dielectric constant of less than about 3. The dielectric materials are fromed from polymer compositions, wherein the polymer compositions comprise a plurality of monomersand wherein at least one monomer comprises a radical precursor bonded to a structural precursor. Further, methods of forming dielectric materials from polymer compositions are presented. The figure shows the chemical structure for a methyl/t-butyl Low organic Content/Low Organic Siloxane Polymer.
摘要翻译：本文描述的低电介质材料除了超极子纳米孔之外还包含多个孔或纳米孔。进一步考虑到，本文所述的低电介质材料将具有小于约3的介电常数。介电材料来自聚合物组合物，其中聚合物组合物包含多种单体，并且其中至少一种单体包含基团前体键合结构前体。此外，提出了从聚合物组合物形成电介质材料的方法。该图显示了甲基/叔丁基低有机含量/低有机硅氧烷聚合物的化学结构。

5. 发明申请

WO2003044079A1 SPIN-ON-GLASS ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY 审中-公开
标题翻译：旋转玻璃防反射涂层
公开(公告)号：WO2003044079A1
公开(公告)日：2003-05-30
申请号：PCT/US2002/035101
申请日：2002-10-31
申请人： HONEYWELL INTERNATIONAL INC. , BALDWIN, Teresa , HACKER, Nigel , KENNEDY, Joseph , SPEAR, Richard
发明人： BALDWIN, Teresa , HACKER, Nigel , KENNEDY, Joseph , SPEAR, Richard
IPC分类号： C08G77/12
CPC分类号： G02B5/23 , C03C17/008 , C03C17/30 , C08G77/04 , C08G77/12 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/091 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
摘要翻译：用于紫外光刻的抗反射涂层材料包括掺入旋涂玻璃材料中的至少一种有机光吸收化合物。合适的吸收化合物在可用于光刻的诸如365nm，248nm，193nm和157nm的波长周围的波长范围上是强吸收的。制造吸收旋涂玻璃材料的方法包括在旋涂玻璃材料的合成期间将至少一种有机吸收化合物与烷氧基硅烷或卤代硅烷反应物组合。

6. 发明申请

WO2006024693A1 NOVEL POLYORGANOSILOXANE DIELECTRIC MATERIALS 审中-公开
标题翻译：新型聚硅氧烷电介质材料
公开(公告)号：WO2006024693A1
公开(公告)日：2006-03-09
申请号：PCT/FI2005/000373
申请日：2005-08-31
申请人： SILECS OY , RANTALA, Juha, T. , PAULASAARI, Jyri , KYLMÄ, Janne , TÖRMÄNEN, Turo, T. , PIETIKÄINEN, Jarkko , HACKER, Nigel , HADZIC, Admir
发明人： RANTALA, Juha, T. , PAULASAARI, Jyri , KYLMÄ, Janne , TÖRMÄNEN, Turo, T. , PIETIKÄINEN, Jarkko , HACKER, Nigel , HADZIC, Admir
IPC分类号： H01L21/312 , H01B3/46 , C08G77/60
CPC分类号： C09D183/14 , C08G77/50 , H01B3/46 , H01L21/02126 , H01L21/02282 , H01L21/3122 , H01L21/76822 , H01L21/76837 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/31663 , H01L2924/00
摘要： A thin film comprising a composition obtained by polymerizing a monomer having the formula (I), wherein R 1 is a hydrolysable group, R 2 is a polarizability reducing organic group, and R 3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.
摘要翻译：一种薄膜，其包含通过使具有式（I）的单体聚合而获得的组合物，其中R <

7. 发明申请

WO2003063225A3 DIELECTRIC FILMS FOR NARROW GAP-FILL APPLICATIONS 审中-公开
公开(公告)号：WO2003063225A3
公开(公告)日：2003-07-31
申请号：PCT/US2002/001628
申请日：2002-01-18
申请人： HONEYWELL INTERNATIONAL INC.
发明人： LEUNG, Roger , HACKER, Nigel , XIE, Songyuan , DENG, Yanpei , ENDISCH, Denis
IPC分类号： H01L21/316
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolaiton applications. According to the mehtods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified bz infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followd by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式