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1. 发明申请

WO2006049760A1 METAL-INSULATOR-METAL DEVICE 审中-公开
标题翻译：金属绝缘体金属器件
公开(公告)号：WO2006049760A1
公开(公告)日：2006-05-11
申请号：PCT/US2005/034888
申请日：2005-09-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ULMER, Kurt , WENG, Jian-gang , MARDILOVICH, Peter , RUDIN, John Christopher
发明人： ULMER, Kurt , WENG, Jian-gang , MARDILOVICH, Peter , RUDIN, John Christopher
IPC分类号： H01L45/00 , G02F1/1365
CPC分类号： G02F1/1365 , H01L45/00
摘要： A metal-insulator-metal device (24, 124, 224, 424) includes a layer (610) having a major dimensional surface. The layer (610) has a first metal portion (452) having a first boundary, a second metal portion (454) having a second boundary facing the first boundary in a direction parallel to the surface and a non-linear dielectric (458) between the first boundary and the second boundary and having a thickness orthogonal to the surface.
摘要翻译：金属 - 绝缘体 - 金属器件（24,124,224,424）包括具有大尺寸表面的层（610）。所述层（610）具有第一边界的第一金属部分（452），在平行于所述表面的方向上具有面向所述第一边界的第二边界的第二金属部分（454）和位于所述第一边界之间的非线性电介质（458）第一边界和第二边界并且具有与表面正交的厚度。

2. 发明申请

WO2006049762A1 METAL-INSULATOR-METAL DEVICE 审中-公开
标题翻译：金属绝缘体金属器件
公开(公告)号：WO2006049762A1
公开(公告)日：2006-05-11
申请号：PCT/US2005/034912
申请日：2005-09-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ULMER, Kurt , WENG, Jian-gang , MARDILOVICH, Peter , RUDIN, John Christopher
发明人： ULMER, Kurt , WENG, Jian-gang , MARDILOVICH, Peter , RUDIN, John Christopher
IPC分类号： H01L45/00
CPC分类号： H01L45/00
摘要： A method for forming a metal-insulator-metal device (24, 124, 224, 424) includes imprinting at least one first layer (620) to form a first depression (636), removing a portion of at least one second layer (610) through the first depression (636) to form a recess (640) in the at least one second layer (610) bordered by a first side (642), a first overhang (646) along the first side (642), a second opposite side (644) and a second overhang (648) along the second side (644). The method also includes depositing a first metal (452) in the recess (640) spaced from the first side (642) and the second side (644) and oxidizing the first metal (452) to create a non-linear dielectric (661).
摘要翻译：一种用于形成金属 - 绝缘体 - 金属器件（24,124,224,424）的方法包括：压印至少一个第一层（620）以形成第一凹陷（636），去除至少一个第二层（610）的一部分）通过所述第一凹陷（636）在所述至少一个第二层（610）中形成凹槽（640），所述至少一个第二层（610）由第一侧（642），第一侧面（642），第一突出部（646）相对侧（644）和沿着第二侧（644）的第二突出部（648）。该方法还包括在与第一侧（642）和第二侧（644）间隔开的凹槽（640）中沉积第一金属（452）并氧化第一金属（452）以产生非线性电介质（661）。

3. 发明申请

WO2006047023A1 METHOD OF FORMING A SOLUTION PROCESSED TRANSISTOR HAVING A MULTILAYER DIELECTRIC 审中-公开
标题翻译：形成具有多层电介质的溶液处理晶体管的方法
公开(公告)号：WO2006047023A1
公开(公告)日：2006-05-04
申请号：PCT/US2005/033947
申请日：2005-09-22
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , HERMAN, Gregory S , MARDILOVICH, Peter , HOFFMAN, Randy , KRAMER, Laura , ULMER, Kurt
发明人： HERMAN, Gregory S , MARDILOVICH, Peter , HOFFMAN, Randy , KRAMER, Laura , ULMER, Kurt
IPC分类号： H01L29/49 , H01L21/316
CPC分类号： H01L21/02282 , H01L21/02123 , H01L21/02172 , H01L21/022 , H01L21/316 , H01L28/56 , H01L29/4908
摘要： Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor (100,120) having a multilayer dielectric (108,110,128,130) are described.
摘要翻译：描述了用于形成具有多层电介质（108,110,128,130）的溶液处理晶体管（100,120）的方法，装置，器件和/或系统的实施例。

4. 发明申请

WO2012002942A1 PIEZOELECTRIC ACTUATOR WITH COPLANAR ELECTRODES 审中-公开
标题翻译：具有共振电极的压电致动器
公开(公告)号：WO2012002942A1
公开(公告)日：2012-01-05
申请号：PCT/US2010/040466
申请日：2010-06-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MARDILOVICH, Peter , KARLINSKI, Haggai , ULMER, Kurt
发明人： MARDILOVICH, Peter , KARLINSKI, Haggai , ULMER, Kurt
IPC分类号： H02N2/06 , B41J2/175
CPC分类号： H01L41/094 , B41J2/14282 , H01L41/047 , H01L41/0933 , H01L41/0973
摘要： A piezoelectric actuator includes a cantilever membrane. A thin film sheet is affixed to one side of the cantilever membrane to bend the membrane in multiple directions in response to an electric field induced within the thin film sheet. A plurality of coplanar electrodes disposed on the thin film sheet are interdigitated in relation to one another to generate the electric field during application of a voltage across interdigitated electrodes.
摘要翻译：压电致动器包括悬臂膜。薄膜片固定在悬臂膜的一侧，以响应于薄膜片内感应的电场在多个方向上弯曲膜。设置在薄膜片上的多个共平面电极彼此相互交错，以便在跨叉指电极施加电压期间产生电场。

5. 发明申请

WO2011046537A1 REPAIRING DEFECTS IN A PIEZOELECTRIC MEMBER 审中-公开
标题翻译：修复压电元件的缺陷
公开(公告)号：WO2011046537A1
公开(公告)日：2011-04-21
申请号：PCT/US2009/060358
申请日：2009-10-12
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MARDILOVICH, Peter , VANDER PLAS, Hubert A. , ULMER, Kurt M.
发明人： MARDILOVICH, Peter , VANDER PLAS, Hubert A. , ULMER, Kurt M.
IPC分类号： H01L41/22 , H01L41/24
CPC分类号： H01L41/23 , B05D5/00 , B05D2203/30 , B05D2502/00 , G01N21/01 , G01N2021/0181
摘要： A solution (10) including a solvent and a monomer is coated on an area of a surface (16) of a piezoelectric member (12) such that the solution (10) flows into one or more defects (18). At least some of the solvent is removed to form a monomer film (20) within a defect (18), and the monomer film (20) is polymerized within the defect to form a polymer film (22) within the defect (18).
摘要翻译：包含溶剂和单体的溶液（10）涂覆在压电元件（12）的表面（16）的区域上，使得溶液（10）流入一个或多个缺陷（18）。除去至少一些溶剂以在缺陷（18）内形成单体膜（20），并且将单体膜（20）在缺陷内聚合以在缺陷（18）内形成聚合物膜（22）。

6. 发明申请

WO2014003768A1 PRINTHEAD ARCHITECTURES 审中-公开
标题翻译： PRINTHEAD建筑
公开(公告)号：WO2014003768A1
公开(公告)日：2014-01-03
申请号：PCT/US2012/044728
申请日：2012-06-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MARDILOVICH, Peter , CRUZ-URIBE, Tony S. , SCHMIDT, Charles Gustav
发明人： MARDILOVICH, Peter , CRUZ-URIBE, Tony S. , SCHMIDT, Charles Gustav
IPC分类号： B41J2/175 , B41J2/045
CPC分类号： B41J2/14233 , B41J2002/14491
摘要： A printhead architecture includes a die having a chamber formed therein. The chamber is at least partially defined by opposed walls. An actuator is positioned over the chamber, and includes a first electrode, a piezoceramic layer in contact with the first electrode, and a second electrode in contact with the piezoceramic layer and discrete from the first electrode. A membrane, which is to be activated by the actuator, overlies the chamber and walls. A first trace, positioned adjacent to but discrete from the actuator, overlaps a portion of the chamber and a portion of one of the opposed walls. A second trace, positioned adjacent to but discrete from the actuator, overlaps another portion of the chamber and a portion of another one of the opposed walls. Each of the first and second traces has a respective width and thickness sufficient to provide additional stiffness to the membrane.
摘要翻译：打印头架构包括具有形成在其中的腔室的模具。腔室至少部分地由相对的壁限定。致动器位于室上方，并且包括第一电极，与第一电极接触的压电陶瓷层，以及与压电陶瓷层接触并与第一电极分离的第二电极。要由致动器激活的膜覆盖室和壁。邻近但离开致动器的第一迹线与腔室的一部分和相对壁中的一个的一部分重叠。位于邻近但离开致动器的第二迹线与腔室的另一部分和另一个相对壁的一部分重叠。第一和第二迹线中的每一个具有足以为膜提供附加刚度的相应宽度和厚度。

7. 发明申请

WO2013066344A1 ASSYMETRIC NANO-STRUCTURES 审中-公开
标题翻译：组合纳米结构
公开(公告)号：WO2013066344A1
公开(公告)日：2013-05-10
申请号：PCT/US2011/059340
申请日：2011-11-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , TORNIAINEN, Erik D. , MARDILOVICH, Peter , FULLER, Anthony M.
发明人： TORNIAINEN, Erik D. , MARDILOVICH, Peter , FULLER, Anthony M.
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B81C1/00031 , B82Y40/00
摘要： A method of forming asymmetric nano-structures includes forming nano-structures on a substrate, establishing a pliable base layer between the nano-structures, applying a lateral force to the pliable base layer to deflect portions of the nano-structures within the pliable base layer, and removing the pliable base layer.
摘要翻译：形成不对称纳米结构的方法包括在衬底上形成纳米结构，在纳米结构之间建立柔韧的基底层，向柔性基底层施加横向力以将柔性基底层内的纳米结构的部分偏转，并且去除柔韧的基层。

8. 发明申请

WO2012044313A1 LEAD-FREE PIEZOELECTRIC MATERIALS WITH ENHANCED FATIGUE RESISTANCE 审中-公开
标题翻译：无铅压电材料，具有增强的耐疲劳性
公开(公告)号：WO2012044313A1
公开(公告)日：2012-04-05
申请号：PCT/US2010/050965
申请日：2010-09-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , JEON, Yu Hong , CANN, David , PATTERSON, Eric , JARUPOOM, Parkpoom , GIBBONS, Brady , MARDILOVICH, Peter
发明人： JEON, Yu Hong , CANN, David , PATTERSON, Eric , JARUPOOM, Parkpoom , GIBBONS, Brady , MARDILOVICH, Peter
IPC分类号： H01L41/187
CPC分类号： H01L41/1878 , C04B35/475 , C04B35/62615 , C04B35/6263 , C04B2235/3201 , C04B2235/3206 , C04B2235/3279 , C04B2235/768
摘要： A lead-free piezoelectric ceramic material has the general chemical formula xBi(A 0.5 Ti 0.5 )O 3 -y(Bi 0.5 K 0.5 )TiO 3 -z(Bi 0.5 Na 0.5 )TiO 3 , wherein x+y+z=1, x ≠ 0, and A = Ni or Mg.
摘要翻译：无铅压电陶瓷材料具有一般化学式xBi（A0.5Ti0.5）O3-y（Bi0.5K0.5）TiO3-z（Bi0.5Na0.5）TiO3，其中x + y + z = 1 ， X ？ 0，A = Ni或Mg。

9. 发明申请

WO2012044309A1 LEAD-FREE PIEZOELECTRIC MATERIAL BASED ON BISMUTH ZINC TITANATE-BISMUTH POTASSIUM TITANATE-BISMUTH SODIUM TITANATE 审中-公开
标题翻译：无铅无铅压电材料，基于双锡酸锌钛酸钾 - 双酚钾钛酸钾 - 双酚钠钛酸钠
公开(公告)号：WO2012044309A1
公开(公告)日：2012-04-05
申请号：PCT/US2010/050947
申请日：2010-09-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , JEON, Yu Hong , CANN, David , PATTERSON, Eric , GIBBONS, Brady , MARDILOVICH, Peter
发明人： JEON, Yu Hong , CANN, David , PATTERSON, Eric , GIBBONS, Brady , MARDILOVICH, Peter
IPC分类号： H01L41/187
CPC分类号： H01L41/1878 , C01G29/006 , C01P2002/72 , C04B35/475 , C04B2235/3201 , C04B2235/3284 , C04B2235/768
摘要： A lead-free piezoelectric ceramic material has the general chemical formula x Bi(Zn 0.5 Ti 0.5 )O 3 - y (Bi 0.5 K 0.5 )TiO3- z (Bi 0.5 Na 0.5 )TiO 3 , wherein x+y+z=1 and x, y, z ≠ 0.
摘要翻译：无铅压电陶瓷材料具有一般化学式xBi（Zn0.5Ti0.5）O3-y（Bi0.5K0.5）TiO3-z（Bi0.5Na0.5）TiO3，其中x + y + z = 1 x，y，z？ 0。

10. 发明申请

WO2006080962A1 SEMICONDUCTOR DEVICE HAVING AN OXIDE SEMICONDUCTOR CHANNEL 审中-公开
标题翻译：具有氧化物半导体通道的半导体器件
公开(公告)号：WO2006080962A1
公开(公告)日：2006-08-03
申请号：PCT/US2005/038814
申请日：2005-10-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , HOFFMAN, Randy , MARDILOVICH, Peter , HERMAN, Gregory S.
发明人： HOFFMAN, Randy , MARDILOVICH, Peter , HERMAN, Gregory S.
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel (108, 208) including one or more compounds of the formula A x B x O x , wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
摘要翻译：示例性实施例包括半导体器件。该半导体器件可以包括通道（108,208），其包括一种或多种下式的化合物：其中每个 A选自Cu，Ag，Sb组，每个B选自Cu，Ag，Sb，Zn，Cd，Ga，In，Ge，Sn和Pb中的每一个，每个O是原子氧，每个x 独立地为非零整数，A和B各自不同。

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