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1. 发明申请

WO2006133342A3 FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
标题翻译：快速磁记忆装置利用旋转传递和磁性元件
公开(公告)号：WO2006133342A3
公开(公告)日：2007-04-12
申请号：PCT/US2006022233
申请日：2006-06-07
申请人： GRANDIS INC , DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
发明人： DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

2. 发明申请

WO2005079348A3 METHOD AND SYSTEM FOR PROVIDING HEAT ASSISTED SWITCHING OF A MAGNETIC ELEMENT UTILIZING SPIN TRANSFER 审中-公开
标题翻译：用于提供使用旋转传递的磁性元件的热辅助切换的方法和系统
公开(公告)号：WO2005079348A3
公开(公告)日：2006-03-30
申请号：PCT/US2005004557
申请日：2005-02-11
申请人： GRANDIS INC , HUAI YIMING , PAKALA MAHENDRA
发明人： HUAI YIMING , PAKALA MAHENDRA
IPC分类号： G11C11/14 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1675
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably by exchange coupling with the free layer. The free layer is switched using spin transfer when a write current is passed through the magnet element. The write current preferably also heats the magnetic element to reduce the stabilization of the free layer provided by the heat assisted switching layer. In another aspect, the magnetic element also includes a second free layer, a second, nonmagnetic spacer layer, and a second pinned layer. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled. The second spacer layer resides between the second free and second pinned layers.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物，自由和热辅助开关层。间隔层位于固定层和自由层之间。自由层位于间隔件和热辅助切换层之间。当自由层不被切换时，优选通过与自由层的交换耦合，热辅助切换层改善了自由层的热稳定性。当写入电流通过磁体元件时，使用自旋转移来切换自由层。写入电流优选还加热磁性元件以减少由热辅助切换层提供的自由层的稳定性。在另一方面，磁性元件还包括第二自由层，第二非磁性间隔层和第二固定层。热辅助切换层位于两个自由层之间，这两个自由层是静磁耦合的。第二间隔层位于第二自由和第二被钉扎层之间。

3. 发明申请

WO2006071724A3 MTJ ELEMENTS WITH HIGH SPIN POLARIZATION LAYERS CONFIGURED FOR SPIN-TRANSFER SWITCHING AND SPINTRONICS DEVICES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：具有配置用于旋转切换的高旋转极化层的MTJ元件和使用磁性元件的旋转器件
公开(公告)号：WO2006071724A3
公开(公告)日：2007-06-07
申请号：PCT/US2005046584
申请日：2005-12-22
申请人： GRANDIS INC , HUAI YIMING , PAKALA MAHENDRA
发明人： HUAI YIMING , PAKALA MAHENDRA
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3204 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F10/3286 , H01F41/302
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing first (102) and second (120) pinned layers, a free layer (114), and first (112) and second (116) barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is oreferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括分别在第一和第二被钉扎层之间提供第一（102）和第二（120）钉扎层，自由层（114）以及第一（112）和第二（116）阻挡层，层。第一阻挡层是结晶的MgO，其是绝缘的，并且被配置为允许隧道穿过第一阻挡层。此外，第一阻挡层具有与另一层（例如自由层或第一固定层）的界面。界面具有提供至少百分之五十，优选百分之八十以上的高自旋极化的结构。第二阻挡层是绝缘的并且被配置为允许隧道穿过第二阻挡层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

4. 发明申请

WO2007025050A3 SPIN-TRANSFER SWITCHING MAGNETIC ELEMENTS USING FERRIMAGNETS AND MAGNETIC MEMORIES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：使用磁铁元件的磁铁转子和磁性记忆体的转子切换磁性元件
公开(公告)号：WO2007025050A3
公开(公告)日：2009-04-16
申请号：PCT/US2006033093
申请日：2006-08-23
申请人： GRANDIS INC , PAKALA MAHENDRA , CHEN EUGENE YOUJUN , HUAI YIMING
发明人： PAKALA MAHENDRA , CHEN EUGENE YOUJUN , HUAI YIMING
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/10
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare- earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，不包括稀土的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。双层包括稀土 - 过渡金属合金层和自旋电流增强层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

5. 发明申请

WO2006063007A2 METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：提供高纹理磁阻元件和磁记忆的方法和系统
公开(公告)号：WO2006063007A2
公开(公告)日：2006-06-15
申请号：PCT/US2005044180
申请日：2005-12-06
申请人： GRANDIS INC , PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
发明人： PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许穿过间隔层的隧穿。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

6. 发明申请

WO2005050653A3 STRESS ASSISTED CURRENT DRIVEN SWITCHING FOR MAGNETIC MEMORY APPLICATIONS 审中-公开
标题翻译：用于磁记忆应用的应力辅助电流驱动开关
公开(公告)号：WO2005050653A3
公开(公告)日：2005-10-27
申请号：PCT/US2004037633
申请日：2004-11-12
申请人： GRANDIS INC , PAKALA MAHENDRA , HUAI YIMING
发明人： PAKALA MAHENDRA , HUAI YIMING
IPC分类号： G11C20060101 , G11C11/16 , G11C17/02 , H01L21/336 , H01L21/8246 , H01L27/22 , H01L43/08
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/08
摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.
摘要翻译：公开了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁性元件并提供至少一个应力辅助层。多个磁性元件中的每一个被配置为使用自旋转移来写入。所述至少一个应力辅助层被配置为在书写期间在所述多个磁性元件的至少一个磁性元件上施加至少一个应力。自旋转移开关电流的减小是由于应力辅助层在写入期间对磁性元件施加的应力。相对于热波动，磁存储器的稳定性不会受到损害，因为一旦切换电流关闭，两个磁化状态之间的能量势垒就不变。

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