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1. 发明申请

WO2007011881A3 MAGNETIC ELEMENTS HAVING IMPROVED SWITCHING CHARACTERISTICS 审中-公开
标题翻译：具有改进的开关特性的磁性元件
公开(公告)号：WO2007011881A3
公开(公告)日：2009-06-25
申请号：PCT/US2006027715
申请日：2006-07-18
申请人： GRANDIS INC , APALKOV DMYTRO , HUAI YIMING
发明人： APALKOV DMYTRO , HUAI YIMING
IPC分类号： H01L27/108 , H01L29/76 , H01L29/82 , H01L29/84 , H01L29/94 , H01L31/119 , H01L43/00
CPC分类号： G01R33/093 , G11C11/16
摘要： A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了使用磁性元件提供磁性元件和存储器的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。间隔层是非铁磁性的并且位于被钉扎层和自由层之间。至少自由层具有在第一端部和第二端部之间的第一端部，第二端部和中心部分。第一端部，第二端部和中央部形成S形。第一端部和第二端部中的至少一个包括曲线。磁性元件还被配置为允许自由层至少部分地由于当写入电流通过磁性元件时的自旋转移而被切换。

2. 发明申请

WO2007047311A3 SPIN TRANSFER BASED MAGNETIC STORAGE CELLS UTILIZING GRANULAR FREE LAYERS AND MAGNETIC MEMORIES USING SUCH CELLS 审中-公开
标题翻译：使用这种细胞的基于转移的磁性储存细胞利用颗粒自由层和磁性记忆
公开(公告)号：WO2007047311A3
公开(公告)日：2009-04-30
申请号：PCT/US2006039744
申请日：2006-10-11
申请人： GRANDIS INC , APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
发明人： APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
IPC分类号： G11B5/39 , G11B5/127 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

3. 发明申请

WO2006133342A3 FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
标题翻译：快速磁记忆装置利用旋转传递和磁性元件
公开(公告)号：WO2006133342A3
公开(公告)日：2007-04-12
申请号：PCT/US2006022233
申请日：2006-06-07
申请人： GRANDIS INC , DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
发明人： DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

4. 发明申请

WO2007100626A3 CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CURRENT SYMMETRY 审中-公开
标题翻译：具有增强电流和增强电流对称性的电流驱动存储器电池
公开(公告)号：WO2007100626A3
公开(公告)日：2008-12-24
申请号：PCT/US2007004662
申请日：2007-02-22
申请人： GRANDIS INC , HUAI YIMING , CHEN EUGENE
发明人： HUAI YIMING , CHEN EUGENE
IPC分类号： G11C11/00
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2013/0071 , G11C2013/0073
摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
摘要翻译：描述了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。电源提供电源电压。电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。另一方面包括在氧化物晶体管上提供硅作为选择装置。另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

5. 发明申请

WO2006071724A3 MTJ ELEMENTS WITH HIGH SPIN POLARIZATION LAYERS CONFIGURED FOR SPIN-TRANSFER SWITCHING AND SPINTRONICS DEVICES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：具有配置用于旋转切换的高旋转极化层的MTJ元件和使用磁性元件的旋转器件
公开(公告)号：WO2006071724A3
公开(公告)日：2007-06-07
申请号：PCT/US2005046584
申请日：2005-12-22
申请人： GRANDIS INC , HUAI YIMING , PAKALA MAHENDRA
发明人： HUAI YIMING , PAKALA MAHENDRA
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3204 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F10/3286 , H01F41/302
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing first (102) and second (120) pinned layers, a free layer (114), and first (112) and second (116) barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is oreferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括分别在第一和第二被钉扎层之间提供第一（102）和第二（120）钉扎层，自由层（114）以及第一（112）和第二（116）阻挡层，层。第一阻挡层是结晶的MgO，其是绝缘的，并且被配置为允许隧道穿过第一阻挡层。此外，第一阻挡层具有与另一层（例如自由层或第一固定层）的界面。界面具有提供至少百分之五十，优选百分之八十以上的高自旋极化的结构。第二阻挡层是绝缘的并且被配置为允许隧道穿过第二阻挡层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

6. 发明申请

WO2005079528A3 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：具有低饱和磁化自由层的旋转磁体元件
公开(公告)号：WO2005079528A3
公开(公告)日：2006-10-19
申请号：PCT/US2005005448
申请日：2005-02-18
申请人： GRANDIS INC , NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
发明人： NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
IPC分类号： H01L43/00 , G11B5/673 , G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

7. 发明申请

WO2008002813A3 CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS 审中-公开
标题翻译：使用具有增强读取和写入标志的这种细胞的磁性转移和磁性记忆的磁性存储细胞的当前驱动切换
公开(公告)号：WO2008002813A3
公开(公告)日：2009-01-08
申请号：PCT/US2007071710
申请日：2007-06-20
申请人： GRANDIS INC , RENESAS TECH CORP , CHEN EUGENE YOUJUN , HUAI YIMING , PANCHULA ALEX FISCHER , WANG LIEN-CHANG , LUO XIAO
发明人： CHEN EUGENE YOUJUN , HUAI YIMING , PANCHULA ALEX FISCHER , WANG LIEN-CHANG , LUO XIAO
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

8. 发明申请

WO2005029497A3 CURRENT CONFINED PASS LAYER FOR MAGNETIC ELEMENTS UTILIZING SPIN-TRANSFER AND AN MRAM DEVICE USING SUCH MAGNETIC ELEMENTS 审中-公开
标题翻译：使用旋转元件的磁性元件的当前配置通道层和使用这种磁性元件的MRAM器件
公开(公告)号：WO2005029497A3
公开(公告)日：2005-10-06
申请号：PCT/US2004030677
申请日：2004-09-17
申请人： GRANDIS INC , HUAI YIMING , NGUYEN PAUL P , ALBERT FRANK
发明人： HUAI YIMING , NGUYEN PAUL P , ALBERT FRANK
IPC分类号： G11C11/15 , G11C11/16 , G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least one pinned layer (110), a free layer (130), and a current confined layer (120) residing between the pinned layer (110) and the free layer (130). The pinned layer (110) is ferromagnetic and has a first magnetization. The current confined layer (120) has at least one channel in an insulating matrix. The channel are conductive and extend through the current confined layer (120). The free layer (130) is ferromagnetic and has a second magnetization. The pinned layer (110), the free layer (130), and the current confined layer (120) are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element (100) also include other layers, including layers for spin valve (spin tunneling junction, dual spin valve, dual spin tunneling junction and dual spin valve/tunnel structure.
摘要翻译：公开了一种用于提供和磁性元件的方法和系统。在一个方面，磁性元件包括至少一个固定层（110），自由层（130）和驻留在被钉扎层（110）和自由层（130）之间的电流限制层（120）。被钉扎层（110）是铁磁性的并且具有第一磁化强度。电流限制层（120）在绝缘矩阵中具有至少一个通道。通道是导电的并延伸穿过电流限制层（120）。自由层（130）是铁磁性的并具有第二磁化强度。被钉扎层（110），自由层（130）和电流限制层（120）被配置为允许使用自旋转移来切换自由层的磁化。磁性元件（100）还包括其它层，包括用于自旋阀（自旋隧道结，双自旋阀，双自旋隧道结和双自旋阀/隧道结构）的层。

9. 发明申请

WO2005020242A3 MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING AND STORING MULTIPLE BITS 审中-公开
标题翻译：磁性存储元件利用自旋转换和存储多位
公开(公告)号：WO2005020242A3
公开(公告)日：2005-06-30
申请号：PCT/US2004027708
申请日：2004-08-24
申请人： GRANDIS INC , NGUYEN PAUL P , HUAI YIMING
发明人： NGUYEN PAUL P , HUAI YIMING
IPC分类号： G11C11/16 , H01F10/32 , H01L43/08 , G11C11/15
CPC分类号： G11C11/16 , B82Y25/00 , G11C11/5607 , H01F10/3263 , H01L43/08
摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够存储多个比特的磁性元件的方法和系统。该方法和系统包括提供第一固定层，第一非磁性层，第一自由层，连接层，第二固定层，第二非固定层和第二自由层。第一钉扎层是铁磁的并具有在第一方向上钉扎的第一钉扎层磁化。第一非磁性层位于第一固定层和第一自由层之间。第一自由层是铁磁性的并且具有第一自由层磁化。第二钉扎层是铁磁性的并且具有钉扎在第二方向上的第二钉扎层磁化。连接层位于第二固定层和第一自由层之间。第二非磁性层位于第二钉扎层和第二自由层之间。第二自由层是铁磁性的并且具有第二自由层磁化。磁性元件被配置为当写入电流通过磁性元件时，允许第一自由层磁化和第二自由层磁化由于自旋转移而改变方向。

10. 发明申请

WO2007117392A3 ON-PLUG MAGNETIC TUNNEL JUNCTION DEVICES BASED ON SPIN TORQUE TRANSFER SWITCHING 审中-公开
标题翻译：基于旋转转矩开关的ON-PLUG磁性隧道连接装置
公开(公告)号：WO2007117392A3
公开(公告)日：2008-11-06
申请号：PCT/US2007008203
申请日：2007-03-29
申请人： GRANDIS INC , RENESAS TECH CORP , WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
发明人： WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L29/74
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

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