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1. 发明申请

WO2016150850A3 GROWTH OF A-B CRYSTALS WITH NO CURVATURE OF THE CRYSTAL LATTICE 审中-公开
标题翻译： AB选育晶体不含结晶格曲线
公开(公告)号：WO2016150850A3
公开(公告)日：2017-01-26
申请号：PCT/EP2016055956
申请日：2016-03-18
申请人： FREIBERGER COMPOUND MAT GMBH
发明人： WEINERT BERNDT , HABEL FRANK , LEIBIGER GUNNAR
IPC分类号： C30B25/02 , C30B29/40
CPC分类号： C30B29/40 , C30B25/02
摘要： The invention relates to a method for producing III-V-, IV- IV- or II-VI- compound semiconductor crystals. The method starts with the provision of a substrate having optionally one crystal layer (buffer layer). This is followed by the provision of a gas phase which has at least two reactants of elements for the compound semiconductor (II, III, IV, V, VI), the reactants being gaseous at a reaction temperature in the crystal growth reactor and being capable of reacting together under the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, a concentration being chosen that is sufficiently high to facilitate crystal formation and the activity of the III-, IV- or II-compound being reduced in the gas phase by the addition or adjustment of reducing agent and co-reactant, such that the growth rate of the crystal is lower compared to a state without the co-reactant. The compound semiconductor crystal is deposited on a surface of the substrate, whilst a liquid phase can form on the growing crystal. In addition, auxiliary substances can be added which can also be contained in the liquid phase but which are only incorporated in negligible amounts into the compound semiconductor crystal. This allows 3D and 2D growth modes to be controlled selectively. The addition of auxiliary substances and the presence of a liquid phase promote these measures. The product is a single crystal of a III-V-, IV-IV- or II-VI-compound semiconductor crystal, which contains lower concentrations of inclusions or precipitates compared to conventional compound semiconductor crystals and which nevertheless has no or only a negligible curvature.
摘要翻译：本发明涉及一种用于III-V，IV-IV族或II-VI族化合物半导体晶体的制备方法。该方法开始于提供具有可选的结晶层（缓冲层）的基板。随后，在具有至少两个在所述化合物半导体的元件的所选择的反应器条件的反应物的气态和相互反应的晶体生长反应器的反应温度，提供了一种气相（II，III，IV，V，VI）。两种反应物的浓度比进行调整，使得所述化合物半导体晶体能够从气相中，其中的浓度是如此之高，晶体的形成是可能的，由还原剂和共反应物的添加或调整结晶出来是的活性 III，IV或II化合物降低在气相中，该晶体的与在没有共反应剂是低的状态相比的生长速率。在此，化合物半导体晶体沉积在基底的表面上，同时可以在生长的晶体中形成液相。进一步的辅助物质可以被添加，其也可以包含在液相中，但只被安装在化合物半导体晶体中的少量。这里，3D和2D生长模式可以具体控制。辅助物质的加入和液相利于这些措施的存在。该产品是由具有每个III-V，IV-IV族或II-VI族化合物半导体晶体的单晶一个与每个常规化合物半导体晶体的夹杂物或析出物的浓度较低，但没有或只有非常低的比较弯曲了。

2. 发明申请

WO2014124980A3 PROCESS FOR PRODUCING A GALLIUM ARSENIDE SUBSTRATE, GALLIUM ARSENIDE SUBSTRATE, USE THEREOF, AND METHOD OF CHARACTERIZING THE SURFACE PROPERTIES OF A GALLIUM ARSENIDE SUBSTRATE 审中-公开
标题翻译：用于生产阿魏酸钠底物，阿魏酸钠底物的方法及其用途，以及表征阿魏酸钠基质的表面性质的方法
公开(公告)号：WO2014124980A3
公开(公告)日：2014-12-11
申请号：PCT/EP2014052745
申请日：2014-02-12
申请人： FREIBERGER COMPOUND MAT GMBH
发明人： FLIEGEL WOLFRAM , KLEMENT CHRISTOPH , WILLNAUER CHRISTA , SCHEFFER-CZYGAN MAX , KLEINWECHTER ANDRÉ , EICHLER STEFAN , WEINERT BERNDT , MÄDER MICHAEL
IPC分类号： H01L21/02 , G01N21/21
CPC分类号： H01L21/02054 , G01N21/211 , G01N2021/178 , H01L21/02046 , H01L21/02052 , H01L21/02395 , H01L29/20 , Y10T428/24355
摘要： The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.
摘要翻译：本发明涉及一种用于制备表面处理的砷化镓衬底的新方法以及新颖的提供的砷化镓衬底及其用途。根据本发明的方法的改进基于特定的最终表面处理，其通过UV辐射和/或臭氧气体在干燥条件下对砷化镓基底的至少一个表面进行氧化处理，具有至少一种液体介质的砷化镓衬底的至少一个表面和砷化镓衬底的Marangoni干燥。根据本发明提供的砷化镓衬底表现出迄今为止没有获得的表面质量，特别是表面性质的均匀性，其可以通过光学表面分析仪检测，特别是通过用于光学无接触的椭圆侧向衬底贴图定量表征。

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