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1. 发明申请

WO2009011997A1 TRANSISTOR WITH DIFFERENTLY DOPED STRAINED CURRENT ELECTRODE REGION 审中-公开
标题翻译：具有不同掺杂应变电流电极区域的晶体管
公开(公告)号：WO2009011997A1
公开(公告)日：2009-01-22
申请号：PCT/US2008/066669
申请日：2008-06-12
申请人： FREESCALE SEMICONDUCTOR INC. , ZHANG, Da , FOISY, Mark C.
发明人： ZHANG, Da , FOISY, Mark C.
IPC分类号： H01L21/265
CPC分类号： H01L29/41783 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A transistor is formed by providing a semiconductor layer (103) and forming a control electrode (105) overlying the semiconductor layer. A portion of the semiconductor layer is removed lateral to the control electrode to form a first recess (201) and a second recess (203) on opposing sides of the control electrode. A first stressor (301) is formed within the first recess and has a first doping profile. A second stressor (303) is formed within the second recess and has the first doping profile. A third stressor (401) is formed overlying the first stressor. The third stressor has a second doping profile that has a higher electrode current doping concentration than the first profile. A fourth stressor (403) overlying the second stressor is formed and has the second doping profile. A first current electrode and a second current electrode of the transistor include at least a portion of the third stressor and the fourth stressor, respectively.
摘要翻译：通过提供半导体层（103）并形成覆盖半导体层的控制电极（105）形成晶体管。半导体层的一部分被去除控制电极的侧面，以在控制电极的相对侧上形成第一凹部（201）和第二凹部（203）。第一应力器（301）形成在第一凹槽内并具有第一掺杂分布。第二应力器（303）形成在第二凹槽内并且具有第一掺杂分布。第三应力器（401）形成在第一应激源上方。第三应力源具有比第一轮廓具有更高的电极电流掺杂浓度的第二掺杂分布。形成覆盖第二应力源的第四应力器（403）并具有第二掺杂分布。晶体管的第一电流电极和第二电流电极分别包括第三应力源和第四应力源的至少一部分。

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