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1. 发明申请

WO2006093599A2 ANTI-GATE LEAKAGE PROGRAMMABLE CAPACITOR 审中-公开
标题翻译：防盗漏电可编程电容器
公开(公告)号：WO2006093599A2
公开(公告)日：2006-09-08
申请号：PCT/US2006/002646
申请日：2006-01-25
申请人： FREESCALE SEMICONDUCTOR, INC. , SANCHEZ, Hector , TANG, Xinghai
发明人： SANCHEZ, Hector , TANG, Xinghai
CPC分类号： H03L7/093 , H03L7/0891
摘要： An anti-gate leakage programmable capacitor (203) including at least one capacitor having a first terminal coupled to a first node and a second terminal, a second node, and a control circuit which selectively couples the second terminal of the capacitor to the second node or which drives the second terminal to the same voltage as the first node. In one embodiment, the programmable capacitor includes multiple capacitors (207 - 215), an amplifier having an input coupled to the first node and an output, and a switch circuit coupled to the second node, to each second terminal of each capacitor and to the amplifier output. The switch circuit selectively switches each second terminal of each capacitor between the amplifier output and the second node. The switch circuit may include pairs of switches each controlled by a corresponding select signal to selectively switch a corresponding capacitor between the reference node and the output of the amplifier.
摘要翻译：一种防栅泄漏可编程电容器（203），包括至少一个具有耦合到第一节点的第一端子和第二端子的电容器，第二节点和控制电路，其选择性地将电容器的第二端子耦合到第二节点或者将第二端子驱动到与第一节点相同的电压。在一个实施例中，可编程电容器包括多个电容器（207-215），具有耦合到第一节点的输入和输出的放大器以及耦合到第二节点的开关电路连接到每个电容器的每个第二端子放大器输出。开关电路有选择地在放大器输出端和第二节点之间切换每个电容器的每个第二端子。开关电路可以包括开关对，每对开关由相应的选择信号控制，以选择性地在参考节点和放大器的输出之间切换相应的电容器。

2. 发明申请

WO2007047164A2 VOLTAGE CONTROLLED OSCILLATOR WITH A MULTIPLE GATE TRANSISTOR AND METHOD THEREFOR 审中-公开
标题翻译：具有多个门极晶体管的电压控制振荡器及其方法
公开(公告)号：WO2007047164A2
公开(公告)日：2007-04-26
申请号：PCT/US2006/039177
申请日：2006-10-04
申请人： FREESCALE SEMICONDUCTOR INC. , KALPAT, Sriram S. , MATHEW, Leo , MOOSA, Mohamed S. , SADD, Michael A. , SANCHEZ, Hector
发明人： KALPAT, Sriram S. , MATHEW, Leo , MOOSA, Mohamed S. , SADD, Michael A. , SANCHEZ, Hector
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L27/1211 , H01L29/66795 , H01L29/785 , H03K5/133 , H03K2005/00026 , H03K2005/00058 , H03L7/0995
摘要： A voltage controlled oscillator (VCO) (40) has a plurality (42, 44, 46) of series-connected inverters. Within each inverter a first transistor (48) has a first current electrode coupled to a first power supply voltage terminal (VDD), a second current electrode, a first control electrode coupled to an output terminal of another inverter of the plurality of series-connected inverters, and a second control electrode for receiving a first bias signal. A second transistor (50) has a first current electrode coupled to the second current electrode of the first transistor, a second current electrode coupled to a second power supply voltage terminal (VSS), and a first control electrode coupled to the first control electrode of the first transistor. The second control electrode of the first transistor of each inverter receives a same or separate analog control signal (VGP, VPP OR DNP) to adjust the threshold voltage of the first transistors thereof to affect frequency and phase of the VCO's signal.
摘要翻译：压控振荡器（VCO）（40）具有多个（42,44,46）串联逆变器。在每个逆变器内，第一晶体管（48）具有耦合到第一电源电压端（VDD）的第一电流电极，第二电流电极，耦合到多个串联连接的另一个反相器的输出端的第一控制电极逆变器和用于接收第一偏置信号的第二控制电极。第二晶体管（50）具有耦合到第一晶体管的第二电流电极的第一电流电极，耦合到第二电源电压端子（VSS）的第二电流电极和耦合到第一控制电极的第一控制电极的第一控制电极第一个晶体管。每个逆变器的第一晶体管的第二控制电极接收相同或分开的模拟控制信号（VGP，VPP或DNP），以调整其第一晶体管的阈值电压以影响VCO信号的频率和相位。

3. 发明申请

WO2010144215A3 VOLTAGE TRANSLATOR 审中-公开
公开(公告)号：WO2010144215A3
公开(公告)日：2010-12-16
申请号：PCT/US2010/035098
申请日：2010-05-17
申请人： FREESCALE SEMICONDUCTOR INC. , SANCHEZ, Hector
发明人： SANCHEZ, Hector
IPC分类号： H03K19/0175 , G11C16/06
摘要： A voltage translator (20) having an input which receives an input signal and an output which provides a level shifted output signal includes a first inverter (34) having an input coupled to receive the input signal, a second inverter (36) having an input coupled to an output of the first inverter, a third inverter (38) having an input coupled to an output of the second inverter, a fourth inverter (44) having an input coupled to receive the input signal and an output coupled to an output of the third inverter, a fifth inverter (46) having an input coupled to an output of the fourth inverter and having an output coupled to the input of the third inverter, and a sixth inverter (48) having an input coupled to the output of the fifth inverter and an output coupled to the output of the voltage translator. The second and fourth inverters are coupled to a calibration voltage supply terminal.

4. 发明申请

WO2007047166A2 OUTPUT DRIVER CIRCUIT WITH MULTIPLE GATE DEVICES 审中-公开
标题翻译：具有多个门控器件的输出驱动电路
公开(公告)号：WO2007047166A2
公开(公告)日：2007-04-26
申请号：PCT/US2006/039179
申请日：2006-10-04
申请人： FREESCALE SEMICONDUCTOR INC. , SANCHEZ, Hector
发明人： SANCHEZ, Hector
IPC分类号： H03B1/00
CPC分类号： H03K19/018507
摘要： An output driver circuit (100, 200, 10, 300, 500) comprising a plurality of multiple gate field effect transistors (e.g. 12, 14) (MGFETs) that provides an output signal (30) is provided. Each output driver circuit may have a first MGFET gate for receiving a drive signal (11, 13), a second MGFET gate for biasing purposes (22, 24), and a current electrode for providing an output signal (30). Some embodiments provide a drive signal (11, 13) and a bias signal (22, 24) to the same MGFET device. Alternate embodiments provide the same drive signal (211) (or alternately the same bias signal (213)) to both gates of the same MGFET device (212, 214). Some embodiments may provide an output driver circuit (100) having variable output impedance. Predriver circuitry (236) and/or bias control circuitry (240) may optionally be used.
摘要翻译：提供了包括提供输出信号（30）的多个多栅极场效应晶体管（例如12,14）（MGFET））的输出驱动器电路（100,200，10,300,500）。每个输出驱动器电路可以具有用于接收驱动信号（11,13）的第一MGFET门，用于偏置目的的第二MGFET栅极（22,24）以及用于提供输出信号（30）的电流电极。一些实施例向相同的MGFET装置提供驱动信号（11,13）和偏置信号（22,24）。替代实施例向相同的MGFET装置（212,214）的两个门提供相同的驱动信号（211）（或交替地相同的偏置信号（213））。一些实施例可以提供具有可变输出阻抗的输出驱动器电路（100）。可以可选地使用预驱动器电路（236）和/或偏置控制电路（240）。

5. 发明申请

WO2005020279A2 SEMICONDUCTOR DEVICE HAVING ELECTRICAL CONTACT FROM OPPOSITE SIDES AND METHOD THEREFOR 审中-公开
标题翻译：具有电气接触的半导体器件及其方法
公开(公告)号：WO2005020279A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/022437
申请日：2004-07-13
申请人： FREESCALE SEMICONDUCTOR, INC. , SANCHEZ, Hector , MENDICINO, Michael, A. , MIN, Byoung, W. , YU, Kathleen, C.
发明人： SANCHEZ, Hector , MENDICINO, Michael, A. , MIN, Byoung, W. , YU, Kathleen, C.
IPC分类号： H01L
CPC分类号： H01L27/0688 , H01L21/76838 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L23/5223 , H01L27/1203 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.
摘要翻译：半导体（10）具有诸如晶体管的有源器件，其具有通过通孔或导电区域（52）和互连件（68）连接的直接下伏的无源器件，例如电容器（75,77,79），99）。通孔或导电区域（52）接触晶体管的扩散或源极区域（22）的底表面并接触电容器电极的第一（75）。横向定位的垂直通孔（32,54,68）和互连件（99）接触电容器电极的第二（79）。可以使用金属互连或导电材料（68）作为通过在晶体管下面实现功率平面而不是与晶体管相邻来节省电路面积的功率面。

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