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1. 发明申请

WO2005091966A2 METHOD AND APPARATUS FOR IMPROVING SENSITIVITY IN VERTICAL COLOR CMOS IMAGE SENSORS 审中-公开
标题翻译：用于提高垂直彩色CMOS图像传感器灵敏度的方法和装置
公开(公告)号：WO2005091966A2
公开(公告)日：2005-10-06
申请号：PCT/US2005006961
申请日：2005-03-02
申请人： FOVEON INC , HYNECEK JAROSLAV , MERRILL RICHARD B , MARTIN RUSSEL A
发明人： HYNECEK JAROSLAV , MERRILL RICHARD B , MARTIN RUSSEL A
IPC分类号： H01L29/768
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14636 , H04N9/045
摘要： The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes place in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.
摘要翻译：本发明详细描述了在没有放置在其表面上的吸收滤光器的情况下感测入射光的颜色的CMOS图像传感器像素的结构。通过在硅体中放置三电荷检测节点的垂直堆叠来实现颜色感测，其根据其生成的深度收集电子。通过使用完全耗尽的势阱形成掩埋层而不是未剥离的结电极，实现小电荷检测节点电容以及因此具有低噪声的高灵敏度。提出了接触埋层而基本上不增加节点电容的两个实施例。

2. 发明申请

WO0227763A3 ACTIVE PIXEL SENSOR WITH NOISE CANCELLATION 审中-公开
标题翻译：主动像素传感器与噪声消除
公开(公告)号：WO0227763A3
公开(公告)日：2003-03-13
申请号：PCT/US0129945
申请日：2001-09-24
申请人： FOVEON INC
发明人： MERRILL RICHARD B
IPC分类号： H04N5/363 , H04N5/374 , H01L27/146 , H04N3/15
CPC分类号： H04N5/363
摘要： A CMOS active pixel sensor with noise reduction employs a photodetector. A reset switch is coupled between a reset potential line and the photodetector and is controlled by a reset line. An amplifier is coupled to the photodetector. A kTC noise reducing circuit is disposed within the pixel sensor. A readout circuit is coupled to the kTC noise reducing circuit and is controlled by a row-select line.
摘要翻译：具有降噪的CMOS有源像素传感器采用光电检测器。复位开关耦合在复位电位线和光电检测器之间，并由复位线控制。放大器耦合到光电检测器。 kTC噪声降低电路设置在像素传感器内。读出电路耦合到kTC降噪电路，并由行选择线控制。

3. 发明申请

WO0245404A3 DIGITAL PIXEL SENSOR AND FRAME STORE IMAGER 审中-公开
标题翻译：数字像素传感器和帧存储图像
公开(公告)号：WO0245404A3
公开(公告)日：2002-10-10
申请号：PCT/US0143159
申请日：2001-11-27
申请人： FOVEON INC
发明人： MERRILL RICHARD B , LYON RICHARD F , TURNER RICHARD M , DONG MILTON B
IPC分类号： H04N3/15 , H04N5/335
CPC分类号： H04N5/37455
摘要： A digital pixel sensor is formed on a semiconductor substrate and comprises a phototransducer responsive to light for providing an analog output signal that is a function of an incident amount of light. A comparator is configured to compare the analog output signal and a ramp reference signal. A plurality of n DRAM cells are configured to store an at least n-bit digital signal in response to the output of the comparator. An array of digital pixel sensors is also disclosed.
摘要翻译：数字像素传感器形成在半导体衬底上，并且包括响应于光的光电转换器，用于提供作为入射光量的函数的模拟输出信号。比较器被配置为比较模拟输出信号和斜坡参考信号。多个n个DRAM单元被配置为响应于比较器的输出来存储至少n位数字信号。还公开了数字像素传感器阵列。

4. 发明申请

WO0213510A2 ALL-ELECTRONIC HIGH-RESOLUTION DIGITAL STILL CAMERA 审中-公开
标题翻译：全电子高分辨率数字静止照相机
公开(公告)号：WO0213510A2
公开(公告)日：2002-02-14
申请号：PCT/US0123825
申请日：2001-07-27
申请人： FOVEON INC
发明人： MEAD CARVER A , MERRILL RICHARD B , LYON RICHARD F
IPC分类号： G03B7/16 , G03B7/28 , G03B15/05 , H04N5/225 , H04N5/232 , H04N5/235 , H04N5/376 , H04N101/00 , H04N1/00
CPC分类号： H04N5/2353 , H04N5/23212 , H04N5/23293 , H04N5/353 , H04N5/3745
摘要： An electronic camera system includes a lens system including at least one lens. A semiconductor sensor array having a plurality of pixels is optically coupled to the lens system. Each pixel generates an output signal that is a function of incident light. A sensor control circuit is adapted to produce sensor control signals for controlling the operation of the pixels in the semiconductor sensor array in response to user input. Circuitry is provided for producing from the semiconductor sensor array a first set of image output signals indicative of the intensity of the light at a first set of the pixels when the sensor control signals are in a first state, and a second set of image output signals indicative of the intensity of the light at a second set of the pixels when the sensor control signals are in a second state, the first set of pixels including more pixels than the second set of pixels. A storage medium is coupled to the sensor array and is adapted for storing a representation of the first set of image output signals when the sensor control signals are in the first state. A display is adapted for displaying the second set of image output signals when the sensor control signals are in the second state.
摘要翻译：电子照相机系统包括具有至少一个透镜的透镜系统。具有多个像素的半导体传感器阵列光学耦合到透镜系统。每个像素都会生成一个输出信号，该信号是入射光的函数。传感器控制电路适于响应于用户输入产生用于控制半导体传感器阵列中的像素的操作的传感器控制信号。提供电路用于从半导体传感器阵列产生第一组图像输出信号和第二组图像输出信号，第一组图像输出信号指示当传感器控制信号处于第一状态时第一组像素处的光的强度，指示当传感器控制信号处于第二状态时第二组像素处的光的强度，第一组像素包括比第二组像素更多的像素。存储介质耦合到传感器阵列并且适于当传感器控制信号处于第一状态时存储第一组图像输出信号的表示。显示器适用于当传感器控制信号处于第二状态时显示第二组图像输出信号。

5. 发明申请

WO0227804A3 VERTICAL COLOR FILTER DETECTOR GROUP AND ARRAY 审中-公开
标题翻译：垂直颜色滤光片检测器组和阵列
公开(公告)号：WO0227804A3
公开(公告)日：2003-02-20
申请号：PCT/US0129488
申请日：2001-09-20
申请人： FOVEON INC
发明人： MERRILL RICHARD B
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335
CPC分类号： H01L27/14647 , H01L27/14621
摘要： A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor. The blue-sensitive detector layer at the surface of the semiconductor may have a reference layer only below it, while the red- and green-sensitive detector layers have reference layers above and below them. Three sets of active pixel sensor circuitry are coupled to the three detector layers, such that three active pixel sensors are formed using the group of three co-located detectors of the vertical color filter detector group.
摘要翻译：根据本发明的垂直滤色器检测器组形成在半导体衬底上并且包括至少六层交替的p型和n型掺杂区域。层之间的PN结作为具有光谱灵敏度的光电二极管起作用，其依赖于半导体中的光的吸收深度与波长的关系。交替的层，优选n型层，是收集光生载流子的检测器层，而中间层，优选p型是参考层，并且共同连接到被称为接地的参考电位。每个检测器组包括在半导体表面处的n型层处的蓝色敏感检测器层，在半导体中较深的n型层处的绿色敏感检测器层，以及在该n型层处的红色敏感检测器层型层最深的半导体。在半导体表面处的蓝色敏感检测器层可以仅在其下方具有参考层，而红色和绿色敏感检测器层在其上方和下方具有参考层。三组有源像素传感器电路耦合到三个检测器层，使得使用垂直滤色器检测器组的三个共位检测器的组来形成三个有源像素传感器。

6. 发明申请

WO2007061565A3 VERTICAL COLOR FILTER SENSOR GROUP ARRAY WITH FULL-RESOLUTION TOP LAYER AND LOWER-RESOLUTION LOWER LAYER 审中-公开
标题翻译：垂直色彩过滤器传感器组阵列全分辨率顶层和较低分辨率下层
公开(公告)号：WO2007061565A3
公开(公告)日：2007-10-11
申请号：PCT/US2006041693
申请日：2006-10-27
申请人： FOVEON INC , LYON RICHARD F , HUBEL PAUL M , BAGULA MARK O , MERRILL RICHARD B
发明人： LYON RICHARD F , HUBEL PAUL M , BAGULA MARK O , MERRILL RICHARD B
IPC分类号： H01L31/00
CPC分类号： H01L27/14647 , H01L27/14621 , H04N5/3696 , H04N9/045
摘要： An array of vertical color filter (VCF) sensor groups, comprising circuitry for converting photogenerated carriers produced in the sensors to electrical signals, and reading out the array. The array has top and lower layers of sensors. Only the top layer can be read out with full resolution. Each low layer can only be read out with less than full resolution to generate fewer sensor output values than the total number of pixel sensor locations. Typically, the sensor groups are arranged in ceils, each cell including S sensor groups (e.g., S = 4), with S sensors in the top layer and fewer than S sensors in each low layer of the cell. Typically, each cell includes at least one shared sensor (a sensor shared by two or more VCF sensor groups) in each low layer, and each cell includes sensor selection switches between the cell's sensors and a sense node.
摘要翻译：一组垂直滤色器（VCF）传感器组，包括用于将在传感器中产生的光生载流子转换为电信号并读出阵列的电路。该阵列具有顶层和下层传感器。只有顶层才能以全分辨率读出。每个低层只能以少于全分辨率读出，以产生比像素传感器位置总数少的传感器输出值。通常，传感器组被布置在细胞中，每个单元包括S个传感器组（例如S = 4），S个传感器在顶层中，并且小于单元的每个低层中的S个传感器。通常，每个小区包括在每个低层中的至少一个共享传感器（由两个或更多个VCF传感器组共享的传感器），并且每个小区包括小区的传感器和感测节点之间的传感器选择开关。

7. 发明申请

WO2005067417A3 VERTICAL COLOR FILTER SENSOR GROUP ARRAY THAT EMULATES A PATTERN OF SINGLE-LAYER SENSORS WITH EFFICIENT USE OF EACH SENSOR GROUP'S SENSORS 审中-公开
标题翻译：垂直滤色片传感器组阵列，可以模拟单层传感器的图案，有效地利用各传感器组的传感器
公开(公告)号：WO2005067417A3
公开(公告)日：2005-12-15
申请号：PCT/US2004016684
申请日：2004-05-27
申请人： FOVEON INC
发明人： LYON RICHARD F , MERRILL RICHARD B
IPC分类号： H01L27/146 , H01L31/00 , H01L31/0216
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L31/02162
摘要： An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to combine the outputs of sensors of multiple sensor groups such that the array emulates a conventional array of single-layer sensors arranged in a Bayer pattem or other single-layer sensor patterm, and such that the outputs of at least substantially all of the sensors of each of the VCF sensor groups are utilized to emulate the array of single-layer sensors.
摘要翻译：一组垂直滤色器（VCF）传感器组，每个VCF传感器组包括至少两个垂直堆叠的光敏传感器。优选地，制造阵列，或者读出电路被配置（或具有其配置的状态），以组合多个传感器组的传感器的输出，使得阵列模拟传统的单层传感器阵列，其布置在拜耳模式或其他单层传感器图案，并且使得每个VCF传感器组的至少基本上所有传感器的输出被用于仿真单层传感器阵列。

8. 发明申请

WO0165830A9 HIGH-SENSITIVITY STORAGE PIXEL SENSOR HAVING AUTO-EXPOSURE DETECTION 审中-公开
标题翻译：具有自动曝光检测功能的高灵敏度存储像素传感器
公开(公告)号：WO0165830A9
公开(公告)日：2004-01-29
申请号：PCT/US0106533
申请日：2001-02-27
申请人： FOVEON INC
发明人： MERRILL RICHARD B , TURNER RICHARD M , DONG MILTON B , LYON RICHARD F
IPC分类号： H04N5/351 , H04N5/3745 , H04N3/15
CPC分类号： H04N5/351 , H04N5/2351 , H04N5/3745
摘要： A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.
摘要翻译：设置在半导体衬底上的存储像素传感器包括具有耦合到第一电位的第一端子和第二端子的光电二极管。阻挡晶体管具有耦合到光电二极管的第二端子的第一端子，耦合到栅极设置电压的第二端子和控制栅极。复位晶体管具有耦合到势垒晶体管的第二端子的第一端子，耦合到反向偏置光电二极管的复位参考电位的第二端子，以及耦合到RESET信号源的控制栅极。光电荷积分节点耦合到所述阻挡晶体管的所述第二端子。光电荷积分节点包括第一源极 - 跟随器晶体管的控制栅极。第一源极跟随器晶体管耦合到偏置电流源并具有输出。电容存储节点耦合到第一源跟随器晶体管的输出，并且包括具有输出的第二源极 - 跟随器晶体管的控制栅极。曝光晶体管耦合在第一源极 - 跟随器晶体管的输出端和总计电流求和节点之间，并具有耦合到饱和电平电压的控制栅极。

9. 发明申请

WO0165830A2 HIGH-SENSITIVITY STORAGE PIXEL SENSOR HAVING AUTO-EXPOSURE DETECTION 审中-公开
标题翻译：具有自动曝光检测功能的高灵敏度存储像素传感器
公开(公告)号：WO0165830A2
公开(公告)日：2001-09-07
申请号：PCT/US0106533
申请日：2001-02-27
申请人： FOVEON INC
发明人： MERRILL RICHARD B , TURNER RICHARD M , DONG MILTON B , LYON RICHARD F
IPC分类号： H04N5/351 , H04N5/3745 , H04N3/15
CPC分类号： H04N5/351 , H04N5/2351 , H04N5/3745
摘要： A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.
摘要翻译：设置在半导体衬底上的存储像素传感器包括具有耦合到第一电位的第一端子和第二端子的光电二极管。阻挡晶体管具有耦合到光电二极管的第二端子的第一端子，耦合到栅极设置电压的第二端子和控制栅极。复位晶体管具有耦合到势垒晶体管的第二端子的第一端子，耦合到反向偏置光电二极管的复位参考电位的第二端子，以及耦合到RESET信号源的控制栅极。光电荷积分节点耦合到所述阻挡晶体管的所述第二端子。光电荷积分节点包括第一源极 - 跟随器晶体管的控制栅极。第一源极跟随器晶体管耦合到偏置电流源并具有输出。电容存储节点耦合到第一源跟随器晶体管的输出，并且包括具有输出的第二源极 - 跟随器晶体管的控制栅极。曝光晶体管耦合在第一源极 - 跟随器晶体管的输出端和总计电流求和节点之间，并具有耦合到饱和电平电压的控制栅极。

10. 发明申请

WO0161756A2 ACTIVE PIXEL SENSOR WITH BOOTSTRAP AMPLIFICATION AND REDUCED LEAKAGE DURING READOUT 审中-公开
标题翻译：主动式像素传感器，具有启动放大功能，并在读出期间减少漏电
公开(公告)号：WO0161756A2
公开(公告)日：2001-08-23
申请号：PCT/US0104463
申请日：2001-02-12
申请人： FOVEON INC
发明人： MERRILL RICHARD B , TURNER RICHARD M , DONG MILTON B , LYON RICHARD F
IPC分类号： H01L27/146 , H04N5/357 , H04N5/369 , H04N5/374
CPC分类号： H04N5/357 , H01L27/14609 , H04N5/3698 , H04N5/374 , H04N5/3765
摘要： Active pixel sensor array with bootstrap amplification, comprising a plurality of active pixels arranged in rows and columns, wherein each active pixel comprises a photodiode (12), a reset transistor (14), a source follower transistor (16), and a row select transistor (18); it may additionally comprise a transfer transistor (32). Each row of active pixels comprises a separate source, follower drain row line (Vd), coupled to the drains of the source-follower transistors (16) within said row. The potential of the drain row line is set relatively low during the integration period, and is set relatively high during charge-readout, in order to increase the read-out voltage.
摘要翻译：具有自举放大的有源像素传感器阵列包括以行和列排列的多个有源像素，其中每个有源像素包括光电二极管（12），复位晶体管（14），源极跟随器晶体管（16）和行选择晶体管（18）; 它可以另外包括传输晶体管（32）。每行有源像素包括耦合到所述行内的源极 - 跟随器晶体管（16）的漏极的单独源极，跟随器漏极行线（Vd）。在积分期间，漏极行线的电位设定得相对较低，并且在电荷读出期间被设置得相对较高，以增加读出电压。

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