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1. 发明申请

WO2005071131A3 TRANSPARENT AND CONDUCTIVE OXIDE LAYER, PRODUCTION AND USE THEREOF IN A THIN FILM SOLAR CELL 审中-公开
标题翻译：透明导电氧化物层，生产和使用及其特性的薄膜太阳能电池
公开(公告)号：WO2005071131A3
公开(公告)日：2005-11-24
申请号：PCT/DE2005000059
申请日：2005-01-18
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , RECH BERND , HUEPKES JUERGEN , KLUTH OLIVER , MUELLER JOACHIM
发明人： RECH BERND , HUEPKES JUERGEN , KLUTH OLIVER , MUELLER JOACHIM
IPC分类号： C23C14/00 , C23C14/08 , C23C14/34
CPC分类号： C23C14/0042 , C23C14/086 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： The invention relates to a method for the production of a conductive and transparent zinc oxide layer on a substrate by reactive sputtering. The process comprises a hysteresis region. Said method is characterised by the following steps: A doped metal Zn target is used, whereby the doping content of the target is less than 2.3 at- %, the heater is adjusted for the substrate in such a manner that a substrate temperature is adjusted to above 200 DEG C. A dynamic deposition rate is adjusted to more than 50 nm*m/min, which corresponds to a static deposition rate which is greater than 190 nm/min, and a stabilised working point is selected within the unstable process range which is between the turning point between a stable, metal and unstable process and between the inflection point of the stabilised process curve.
摘要翻译：本发明涉及一种用于通过反应性溅射的衬底，其特征在于，该方法具有滞后上的导电性和透明的氧化锌膜的方法。该方法的特征在于下列步骤：将Zn金属靶一起使用的掺杂剂，其中所述靶的掺杂含量小于2.3原子％时，用于基底的加热器被调整，使得在衬底温度200℃以上 C设定，将有超过50纳米*米动态沉积速率/分钟设定，这对应于超过190纳米/分钟的静态沉积速率，且有选择之间的转折点之间限定的不稳定处理区域内的稳定的工作点稳定，不稳定和金属处理和稳定化处理曲线的转折点。

2. 发明申请

WO2005101522A3 PROCESS AND DEVICE FOR CLEANING AND ETCHING A SUBSTRATE WITH A TRANSPARENT CONDUCTIVE OXIDE LAYER 审中-公开
标题翻译：程序进行清洗和蚀刻基材提供用于实施该方法的透明导电氧化物层和设备
公开(公告)号：WO2005101522A3
公开(公告)日：2006-04-13
申请号：PCT/DE2005000563
申请日：2005-03-31
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , MUELLER JOACHIM , SCHOEPE GUNNAR , SIEKMANN HILDEGARD , RECH BERND , REPMANN TOBIAS , APENZELLER WOLFGANG , SEHRBROCK BRIGITTE
发明人： MUELLER JOACHIM , SCHOEPE GUNNAR , SIEKMANN HILDEGARD , RECH BERND , REPMANN TOBIAS , APENZELLER WOLFGANG , SEHRBROCK BRIGITTE
IPC分类号： H01L21/00 , H01L31/00 , H01L31/18
CPC分类号： H01L21/6708
摘要： A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m 2 . The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.
摘要翻译：本发明描述了具有布置在预结构化氧化锌层的刚性或柔性支撑件，其中，所述氧化锌用蚀刻介质处理基材的处理的简单方法，并且随后用清洗液进行处理。同时衬底通过装置输送执行与蚀刻液和清洗液中的处理。这个过程是处理在技术上较不复杂的，并定期允许最多至1m ^{2 大的ZnO层的均匀粗面化处理和纹理。用于处理基板的设备，它具有设置在预结构化氧化锌层的刚性或柔性支撑件，具有用于此目的的第一装置，用于用蚀刻液处理衬底，用于与清洗液和另外的装置处理基材，尤其是输送辊，用于第二装置输送从所述第一到所述第二部件的基板。}

3. 发明申请

WO2010069287A3 METHOD FOR THE DEPOSITION OF MICROCRYSTALLINE SILICON ON A SUBSTRATE 审中-公开
标题翻译： PROCESS FOR微晶硅对A SUBSTRATE分离
公开(公告)号：WO2010069287A3
公开(公告)日：2011-03-03
申请号：PCT/DE2009001649
申请日：2009-11-18
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , GORDIJN AAD , KILPER THILO , RECH BERND , SCHICHO SANDRA
发明人： GORDIJN AAD , KILPER THILO , RECH BERND , SCHICHO SANDRA
IPC分类号： H01L31/042 , H01L31/075 , H01L31/18
CPC分类号： C23C16/24 , C23C16/509 , H01L31/075 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： The invention relates to a method for depositing microcrystalline silicon on a substrate in a plasma chamber system, comprising the following steps: the plasma chamber system contains at least one reactive, silicon-containing gas and hydrogen or exclusively hydrogen before the plasma is initiated; the plasma is initiated; exclusively reactive, silicon-containing gas or at least one mixture comprising a reactive, silicon-containing gas and hydrogen is continuously fed to the chamber system once the plasma has been initiated, the concentration of reactive, silicon-containing gas that is fed to the chamber being set at more than 0.5 percent; and the plasma performance is adjusted to within a range of 0.1 and 2.5 W/cm2 of electrode surface, a deposition rate exceeding 0.5 nm/s is selected, and the monocrystalline layer is deposited on the substrate at a thickness of less than 1000 nanometers.
摘要翻译：本发明涉及一种在包括以下步骤的等离子体腔室系统中的衬底上沉积微晶硅的方法：等离子体腔室系统包括等离子体开始前至少一种反应性气体和氢或专门氢等离子体含硅是，根据腔室系统开始等离子体开始连续地只反应性含硅气体供给或腔室系统连续地，至少包括提供给等离子体开始后的反应性含硅气体和氢气，其中所述反应性含硅基气体在供给到腔室中的浓度大于0.5的混合物％被设置，并且所述等离子体功率设置在0.1和2.5 W / cm 2的电极区域之间，会有s的选择的沉积速率大于0.5纳米/和具有厚度小于1000纳米的微晶层沉积在衬底。

4. 发明申请

WO2006018244A3 TRANSMISSION OF DATA TO A VEHICLE 审中-公开
标题翻译：数据传输给一辆车
公开(公告)号：WO2006018244A3
公开(公告)日：2006-05-11
申请号：PCT/EP2005008794
申请日：2005-08-09
申请人： VOLKSWAGEN AG , CALISKAN MURAT , BRUNS CHRISTIAN , GRADE MARTIN , LUEBKE ANDREAS , MEIER KLAUS , RECH BERND , AJAZ AMER
发明人： CALISKAN MURAT , BRUNS CHRISTIAN , GRADE MARTIN , LUEBKE ANDREAS , MEIER KLAUS , RECH BERND , AJAZ AMER
IPC分类号： H04L29/06 , B60R16/02 , G08G1/09
CPC分类号： G08G1/096741 , G08G1/161
摘要： The invention relates to the transmission of data to a vehicle (1), in particular to a road vehicle. The data is wirelessly transmitted in a vehicle-vehicle communication network and/or in a communication network, comprising fixed emitting stations, to a receiving device (5) of the vehicle (1). A filter device (7), which is used to filter the received data and which is connected to a receiving device (5), decides whether the data or parts of the data are excluded from additional data processing in the vehicle (1) according to information contained in the data.
摘要翻译：本发明涉及数据传输到车辆（1），特别是公路汽车，其中无线地在车辆中的车载通信网络和/或在通信网络中与固定发射站到接收装置的数据（5）的车辆（1）的被转移。用于过滤所接收的数据，该过滤装置的过滤装置（7）（7）到所述接收装置（5）连接，这取决于包含在数据信息作出决定，是否在车辆中的数据或一个进一步的数据处理的数据的部分（1 ）被排除在外。

5. 发明申请

WO2010139312A3 SOLAR CELL COMPRISING NEIGHBORING ELECTRICALLY INSULATING PASSIVATION REGIONS HAVING HIGH SURFACE CHARGES OF OPPOSING POLARITIES AND PRODUCTION METHOD 审中-公开
标题翻译：与表面电荷极性相反的规定和方法近域的电绝缘钝化区太阳电池
公开(公告)号：WO2010139312A3
公开(公告)日：2011-05-19
申请号：PCT/DE2010000625
申请日：2010-06-01
申请人： HELMHOLTZ ZENT B MAT & ENERG , STANGL ROLF , RECH BERND
发明人： STANGL ROLF , RECH BERND
IPC分类号： H01L31/0224 , H01L31/062
CPC分类号： H01L31/022441 , H01L31/022458 , H01L31/0682 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： In order to provide alternative excess charge carrier separation with the same or an improved level of efficiency and method complexity, the solar cell according to the invention is provided with an alternating neighboring arrangement of a plurality of first and second electrically insulating passivation regions (04, 05) having high opposing surface charges on the back (02) of the absorber layer (03, 20), between which regions the electric fields (08) for charge carrier separation then form. No further electric fields are required for charge carrier separation. The absorber layer (03, 20) can be designed to be intrinsic or doped. The solar cell (02) according to the invention is contacted at the back by way of first and second contact elements (09, 10) in the first and second electrically insulating passivation regions (04, 05).
摘要翻译：替代过量 - 对于相同的或改进的效率和工艺的复杂性在高相对表面电荷的本发明的太阳能电池中，多个第一和第二电绝缘的钝化区的交替相邻排列（04，05）上的吸收体层的背面侧（02）的载流子的分离（03，20）设置在它们之间进而形成的电场（08）电荷载流子分离。不需要载体分离其他的电场充电。在吸收层（03，20）可以被设计或本征掺杂。本发明（02）所述的太阳能电池是通过在第一和第二电绝缘的钝化区（04，05），背面侧接触第一和第二接触元件（09，10）相连接。

6. 发明申请

WO2010012259A3 THIN-FILM SOLAR MODULE WHICH IS CONTACT-CONNECTED ON ONE SIDE AND HAS AN INTERNAL CONTACT LAYER 审中-公开
标题翻译：单面接触薄层太阳能电池组件，带有内部接触层。
公开(公告)号：WO2010012259A3
公开(公告)日：2010-09-16
申请号：PCT/DE2009000966
申请日：2009-07-11
申请人： HELMHOLTZ ZENT B MAT & ENERG , STANGL ROLF , LIPS KLAUS , RECH BERND
发明人： STANGL ROLF , LIPS KLAUS , RECH BERND
IPC分类号： H01L27/142 , H01L31/0224
CPC分类号： H01L27/1423 , H01L31/022425 , H01L31/022433 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： The closest known thin-film solar module which is contact-connected on the rear side is based on two contact systems with different point contact-connections, the structuring of which, however, limits the quality of the absorber material used, with the result that pin configurations, in particular, can be achieved only with difficulty. For connection in series, the point contact-connections of the first and second contact systems must be exactly aligned with one another. In contrast, the thin-film solar cell module (00) according to the invention has a second contact system (13) having only one flat internal contact layer (16). The first contact system (12) has contact-connections (14) which are detected by an outer contact layer (15). For connection in series, the contact-connections (14) are connected to the internal contact area (16) in connection regions (21) between adjacent solar cell regions (09, 10) using series contact-connections (22). Outside the connection regions (22), the two contact systems (12, 13) are electrically insulated with respect to one another by the interposition of an insulation layer (17). The thin-film solar module (00) according to the invention can be implemented in a simple manner in all possible embodiments (pn or pin configuration, contact-connection on the rear side or front side, superstrate or substrate, integration of additional functional layers) without any alignment problems and yields the greatest possible degree of efficiency.
摘要翻译：具有背接触的最近已知的薄膜太阳能模块基于具有不同点接触的两个接触系统，其结构限制了所使用的吸收材料的质量，使得特别是销配置难以实现。对于串联连接，第一和第二触点系统的点触点必须彼此精确对齐。相反，根据本发明的薄膜太阳能电池模块（00）具有仅具有一个平面内接触层（16）的第二接触系统（13）。第一接触系统（12）具有由外部接触层（15）检测的接触部（14）。对于串联连接，触点（14）借助于串联触点（22）在相邻太阳能电池区域（09,10）之间的互连区域（21）中连接到内接触表面（16）。两个接触系统（12,13）在布线区域（22）的外部通过插入绝缘层（17）而彼此电绝缘。根据本发明（00）所述的薄膜太阳能电池模块可以是在所有的可能的实施例（pn或pin结构，背部或前侧，超级或基板上，附加的功能层的掺入）可以容易地没有任何对准问题实现，并且提供了最大的效率。

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