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    • 3. 发明申请
    • THICK FILM DIELECTRIC COMPOSITIONS
    • 厚膜电介质组合物
    • WO1990000966A1
    • 1990-02-08
    • PCT/US1989003102
    • 1989-07-14
    • FERRO CORPORATION
    • FERRO CORPORATIONGARDNER, Robert, D.HOPP, Dineen, M.SHAIKH, Aziz, S.ROBERTS, Gordon, J.
    • B32B03/00
    • H05K1/0306C03C8/10C03C8/22H01B3/085H01B3/087H01B3/088H01L23/49894H01L2924/0002H01L2924/09701H01L2924/00
    • This invention relates to a dielectric composition comprising: (a) about 30 % to about 100 % by weight of a glass composition selected from the group consisting of: (a-1) a bismuth-free, lead-free or low-lead containing glass composition having a glass transition temperature in the range of about 600 DEG C to about 800 DEG C; (a-2) a mixture of two bismuth-free, lead-free or low-lead containing glass compositions comprising a first glass composition having a glass transition temperature in the range of about 585 DEG C to about 620 DEG C and a second glass composition having a glass transition temperature in the range of about 765 DEG C to about 815 DEG C; or (a-3) a mixture of three bismuth-free, lead-free or low-lead containing glass compositions comprising a first glass composition having a glass transition temperature in the range of about 585 DEG C to about 620 DEG C, a second glass composition having a glass transition temperature in the range of about 765 DEG C to about 815 DEG C, and a third glass composition having a glass transition temperature in the range of about 650 DEG C to about 720 DEG C; (b) up to about 30 % by weight of at least one expansion modifier; and (c) up to about 40 % by weight of at least one refractory oxide. This invention also relates to thick-film dielectric pastes and dielectric tapes comprising the foregoing dielectric composition. The invention also relates alumina base substrates having the foregoing dielectric composition bonded to at least one surface thereof, and to a method of bonding the foregoing dielectric composition to alumina base substrates.
    • 本发明涉及一种电介质组合物,其包括:(a)约30%至约100%重量的选自以下的玻璃组合物:(a-1)无铋,无铅或低铅含量 玻璃化合物的玻璃化转变温度在约600℃至约800℃的范围内; (a-2)两种无铋,无铅或含低铅玻璃组合物的混合物,其包含玻璃化转变温度在约585℃至约620℃范围内的第一玻璃组合物和第二玻璃 组合物的玻璃化转变温度在约765℃至约815℃的范围内; 或(a-3)三种无铋,无铅或低含铅玻璃组合物的混合物,其包含玻璃化转变温度在约585℃至约620℃范围内的第一玻璃组合物,第二 具有玻璃化转变温度在约765℃至约815℃范围内的玻璃组合物和玻璃化转变温度在约650℃至约720℃范围内的第三玻璃组合物; (b)至多约30重量%的至少一种膨胀改性剂; 和(c)至多约40重量%的至少一种难熔氧化物。 本发明还涉及包含上述电介质组合物的厚膜电介质浆料和介电胶带。 本发明还涉及具有与上述电介质组合物的至少一个表面接合的氧化铝基底,以及将上述电介质组合物与氧化铝基底结合的方法。