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    • 5. 发明申请
    • TECHNIQUES TO ENHANCE SELECTIVITY OF ELECTRICAL BREAKDOWN OF CARBON NANOTUBES
    • 提高碳纳米管电气选择性的技术
    • WO2010144856A2
    • 2010-12-16
    • PCT/US2010/038396
    • 2010-06-11
    • ETAMOTA CORPORATIONWONG, Eric, WHUNT, Brian, D.KUMAR, RajayLI, Chao
    • WONG, Eric, WHUNT, Brian, D.KUMAR, RajayLI, Chao
    • H01L21/336H01L29/78
    • H01L51/0048B82Y10/00H01L51/0545H01L51/0558H01L51/105
    • Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.
    • 技术用于制造碳纳米管器件。 这些技术改进了不需要的纳米管的选择性去除,例如金属碳纳米管,同时留下了期望的纳米管,如半导体碳纳米管。 在第一种技术中,狭缝图案化用于切割或断裂碳纳米管具有比期望更长的长度。 通过改变开槽的宽度和间距,可以去除纳米管的一定长度或更大。 一旦纳米管的长度被限制在一定或预期的范围内,去除纳米管的电击穿方法更有效。 在第二种技术中,在一个电极(例如漏极或源极)处产生肖特基势垒。 这种肖特基势垒有助于防止在使用电击穿方法时无意中去除所需的纳米管。 第一和第二技术可以单独使用或者彼此组合使用。
    • 6. 发明申请
    • METHOD, DEVICE, RECEIVER, COMPUTER PROGRAM AND STORAGE MEDIA FOR REMOVING DIRECT CURRENT
    • 方法,设备,接收器,计算机程序和存储介质,用于删除直流电流
    • WO2014000217A1
    • 2014-01-03
    • PCT/CN2012/077729
    • 2012-06-28
    • ST-ERICSSON SAZHUANG, LiangLI, ChaoHUANG, Zhen
    • ZHUANG, LiangLI, ChaoHUANG, Zhen
    • H04B1/12
    • H04L25/061
    • The present application discloses a method, a device, a receiver, a computer program and a storage media for removing direct current (DC). A DC removing method comprises: selecting a part or all of chips from a first chip sequence included in a time slot received by a receiver, calculating a first average value of the chips in a second chip sequence consisted of the selected chips, and obtaining a third chip sequence by carrying out a DC removing operation on the chips in the first chip sequence utilizing the first average value; selecting a part or all of the chips from the third chip sequence, and obtaining a second average value by calculating the average value of the chips in a fourth chip sequence consisted of the selected chips; wherein, among the chips in the fourth chip sequence, an absolute value of a difference between the number of chips with a real part greater than 0 and the number of chips with a real part less than 0 is lower than a first preset threshold, and an absolute value of a difference between the number of chips with an imaginary part greater than 0 and the number of chips with an imaginary part less than 0 is lower than a second preset threshold; and obtaining a fifth chip sequence by carrying out a DC removing operation on the chips in the third chip sequence utilizing the second average value.
    • 本申请公开了一种用于去除直流(DC)的方法,装置,接收器,计算机程序和存储介质。 直流去除方法包括:从由接收机接收的时隙中包含的第一码片序列中选择一部分或全部码片,计算由所选码片组成的第二码片序列中的码片的第一平均值, 利用所述第一平均值对所述第一芯片序列中的所述芯片执行DC去除操作; 从第三芯片序列选择一部分或全部芯片,并通过计算由所选芯片组成的第四芯片序列中的芯片的平均值来获得第二平均值; 其中,在所述第四芯片序列中的所述芯片中,实际部分大于0的芯片数与实际部分小于0的芯片数之间的差的绝对值低于第一预设阈值, 假想部分大于0的芯片数目与虚部部分小于0的芯片数之间的差的绝对值低于第二预设阈值; 以及通过利用所述第二平均值对所述第三芯片序列中的所述芯片执行DC去除操作来获得第五芯片序列。