专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006135752A2 COBALT ELECTROLESS PLATING IN MICROELECTRONIC DEVICES 审中-公开
标题翻译：微电子器件中的钴电镀
公开(公告)号：WO2006135752A2
公开(公告)日：2006-12-21
申请号：PCT/US2006/022493
申请日：2006-06-09
申请人： ENTHONE INC. , PANECCASIO, Vincent, Jr. , CHEN, Qingyun , VALVERDE, Charles , PETROV, Nicolai , WITT, Christian , HURTUBISE, Richard
发明人： PANECCASIO, Vincent, Jr. , CHEN, Qingyun , VALVERDE, Charles , PETROV, Nicolai , WITT, Christian , HURTUBISE, Richard
CPC分类号： C23C18/34 , C23C18/50
摘要： An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.
摘要翻译：一种用于在制造包含Co离子源的微电子器件的金属基底上沉积Co或Co合金的化学镀方法和组合物，用于减少沉积到衬底上的金属离子的还原剂和基于肟的复合稳定剂。

2. 发明申请

WO2006044990A1 COBALT AND NICKEL ELECTROLESS PLATING IN MICROELECTRONIC DEVICES 审中-公开
标题翻译：微电子器件中的钴和镍电镀
公开(公告)号：WO2006044990A1
公开(公告)日：2006-04-27
申请号：PCT/US2005/037660
申请日：2005-10-18
申请人： ENTHONE INC. , VALVERDE, Charles , PETROV, Nicolai , YAKOBSON, Eric , CHEN, Qingyun , PANECCASIO, Vincent, Jr. , HURTUBISE, Richard , WITT, Christian
发明人： VALVERDE, Charles , PETROV, Nicolai , YAKOBSON, Eric , CHEN, Qingyun , PANECCASIO, Vincent, Jr. , HURTUBISE, Richard , WITT, Christian
IPC分类号： B05D1/18 , B05D5/12 , C09D5/00
CPC分类号： H01L21/76849 , C23C18/34 , C23C18/36 , C23C18/50 , H01L21/288 , H05K3/244
摘要： An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.
摘要翻译：一种用于在制造微电子器件时将Co，Ni或其合金沉积在金属基底上的化学镀方法和组合物，其涉及选自由Co离子和Ni离子组成的组中的沉积离子源，还原剂用于还原沉积到金属到基底上的离子，以及基于肼的流平剂。

3. 发明申请

WO2011149965A2 COPPER FILLING OF THROUGH SILICON VIAS 审中-公开
标题翻译：铜填充硅橡胶
公开(公告)号：WO2011149965A2
公开(公告)日：2011-12-01
申请号：PCT/US2011/037777
申请日：2011-05-24
申请人： ENTHONE INC. , RICHARDSON, Thomas, B. , SHAO, Wenbo , LIN, Xuan , WANG, Cai , PANECCASIO, Vincent, Jr. , ABYS, Joseph, A. , ZHANG, Yun , HURTUBISE, Richard , WANG, Chen
发明人： RICHARDSON, Thomas, B. , SHAO, Wenbo , LIN, Xuan , WANG, Cai , PANECCASIO, Vincent, Jr. , ABYS, Joseph, A. , ZHANG, Yun , HURTUBISE, Richard , WANG, Chen
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D5/02 , C25D7/123 , H01L21/2885 , H01L21/76898
摘要： A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.
摘要翻译：一种用于在半导体集成电路器件衬底中金属化硅通孔特征的方法。该方法包括将半导体集成电路器件衬底浸入电解铜沉积组合物中，其中贯穿硅通孔特征具有介于1微米至100微米之间的入口尺寸，20微米至750微米的深度尺寸，以及大于约2：1; 向电解沉积组合物供给电流以将铜金属沉积到底部和侧壁上以进行自底向上填充，由此产生铜填充的通孔特征。沉积组合物包含（a）铜离子源; （b）选自无机酸，有机磺酸及其混合物的酸; （c）有机二硫化物; （d）选自苄基氯和羟乙基亚乙基亚胺的反应产物，季铵化吡啶基化合物及其组合的化合物; 和（d）氯离子。

4. 发明申请

WO2005121405A1 CORROSION RESISTANCE ENHANCEMENT OF TIN SURFACES 审中-公开
标题翻译：锡表面的耐腐蚀性提高
公开(公告)号：WO2005121405A1
公开(公告)日：2005-12-22
申请号：PCT/US2005/019395
申请日：2005-06-02
申请人： ENTHONE INC. , FAN, Chonglun , ABYS, Joseph, A. , XU, Chen , KUDRAK, Edward, J. Jr. , PANECCASIO, Vincent, Jr. , ZAVARINE, Igor , RIETMANN, Christian
发明人： FAN, Chonglun , ABYS, Joseph, A. , XU, Chen , KUDRAK, Edward, J. Jr. , PANECCASIO, Vincent, Jr. , ZAVARINE, Igor , RIETMANN, Christian
IPC分类号： C23F11/167
CPC分类号： C23F11/1676 , C23C22/06 , C23C22/74 , C23C22/82 , H01L23/49582 , H01L24/48 , H01L24/49 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01057 , H01L2924/01078 , H01L2924/01084 , H01L2924/181 , H05K3/282 , H05K3/3426 , H01L2224/45099 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A method for enhancing corrosion resistance of a tin-based surface on a workpiece involving contacting the tin-based surface with a composition comprising a phosphonic acid compound and water to form a phosphorus-based film over the tin-based coating thereby inhibiting corrosion of the tin-based surface. Phosphonic acid containing compositions having a concentration up to about 30 vol. % of an organic solvent, and water.
摘要翻译：一种用于提高工件上锡基表面的耐腐蚀性的方法，包括使锡基表面与包含膦酸化合物和水的组合物接触以在锡基涂层上形成磷基膜，从而抑制锡基表面的腐蚀锡基表面。含有膦酸的组合物，其浓度高达约30vol。％的有机溶剂和水。

5. 发明申请

WO2018057590A1 COPPER DEPOSITION IN WAFER LEVEL PACKAGING OF INTEGRATED CIRCUITS 审中-公开
标题翻译：集成电路晶圆级封装中铜的沉积
公开(公告)号：WO2018057590A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/052449
申请日：2017-09-20
申请人： MACDERMID ENTHONE INC.
发明人： RICAHRDSON, Thomas , WHITTEN, Kyle , PANECCASIO, Vincent, Jr. , COMMANDER, John , HURTUBISE, Richard
IPC分类号： C07C333/20 , C07D213/04 , C25D3/38 , C25D5/02 , H01L21/768
摘要： An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.
摘要翻译：电沉积组合物，其包含：（a）铜离子源; （b）酸; （c）抑制者; （d）整平剂，其中整平剂包含通过使联吡啶化合物与双官能烷基化剂或季化聚（表卤代醇）反应制备的季化联吡啶化合物。该电沉积组合物可用于在晶片级封装中在半导体衬底上形成铜特征以在半导体组件的下凸点结构上电沉积铜凸块或柱的工艺中。

6. 发明申请

WO2019009989A1 COBALT FILLING OF INTERCONNECTS 审中-公开
公开(公告)号：WO2019009989A1
公开(公告)日：2019-01-10
申请号：PCT/US2018/037469
申请日：2018-06-14
申请人： MACDERMID ENTHONE INC.
发明人： COMMANDER, John , WHITTEN, Kyle , PANECCASIO, Vincent, Jr. , SUN, Shaopeng , YAKOBSON, Eric
IPC分类号： C25D3/16 , C25D5/02 , C25D7/12 , H01L21/768
摘要： Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

7. 发明申请

WO2002103751A2 ELECTROPLATING CHEMISTRY FOR THE CU FILLING OF SUBMICRON FEATURES OF VLSI/ULSI INTERCONNECT 审中-公开
标题翻译：电磁放电化学品用于填充VLSI / ULSI互连的次级特征
公开(公告)号：WO2002103751A2
公开(公告)日：2002-12-27
申请号：PCT/US2001/042964
申请日：2001-11-20
申请人： ENTHONE INC.
发明人： TOO, Elena, H. , GERST, Paul, R. , PANECCASIO, Vincent, Jr. , HURTUBISE, Richard, W.
IPC分类号： H01L
CPC分类号： C25D3/38 , H05K3/423
摘要： A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.
摘要翻译：提供了一种铜电镀浴和一种用浴板对基片进行印版的方法。该浴和方法特别有效地将诸如半导体晶片VLSI和ULSI互连的电子部件用无孔填充铜电镀形成用于形成通孔和沟槽的电路以及具有高纵横比的小于0.2微米的其它小特征。铜浴含有可溶于水的有机二价硫化合物，以及诸如聚氧乙烯和聚氧丙烯的嵌段共聚物的浴溶性聚醚化合物，多元醇的聚氧乙烯或聚氧丙烯衍生物以及多元醇的混合聚氧乙烯和聚氧丙烯衍生物。优选的聚醚化合物是甘油的混合聚氧乙烯和聚氧丙烯衍生物。优选的铜浴还含有吡啶化合物衍生物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式